View MT41J128M8_4237942.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM
MT41J256M4 - 32 Meg x 4 x 8 Banks MT41J128M8 - 16 Meg x 8 x 8 Banks MT41J64M16 - 8 Meg x 16 x 8 Banks Features
* * * * * * * * * * * * * * VDD = VDDQ = +1.5V 0.075V 1.5V center-terminated push/pull I/O Differential bidirectional data strobe 8n-bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals CAS (READ) latency (CL): 5, 6, 7, 8, 9, 10, or 11 POSTED CAS ADDITIVE latency (AL): 0, CL - 1, CL - 2 CAS (WRITE) latency (CWL): 5, 6, 7, 8, based on tCK Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) Selectable BC4 or BL8 on-the-fly (OTF) Self refresh mode TC of 0oC to 95oC - 64ms, 8,192 cycle refresh at 0oC to 85oC - 32ms at 85oC to 95oC Clock frequency range of 300-800 MHz Self refresh temperature (SRT) Automatic self refresh (ASR) Write leveling Multipurpose register Output driver calibration Key Timing Parameters
Data Rate (MT/s) 1600 1600 1600 1333 1333 1333 1066 1066 800 800 Target tRCD-tRP-CL 11-11-11 10-10-10 9-9-9 10-10-10 9-9-9 8-8-8 8-8-8 7-7-7 6-6-6 5-5-5
tRCD
Options
* Configuration - 256 Meg x 4 - 128 Meg x 8 - 64 Meg x 16 * FBGA package (Pb-free) - x4, x8 - 78-ball FBGA (8mm x 11.5mm) Rev. F - 78-ball FBGA (9mm x 11.5mm) Rev. D - 86-ball FBGA (9mm x 15.5mm) Rev. B * FBGA package (Pb-free) - x16 - 96-ball FBGA (9mm x 15.5mm) Rev. B * Timing - cycle time - 1.25ns @ CL = 11 (DDR3-1600) - 1.25ns @ CL = 10 (DDR3-1600) - 1.25ns @ CL = 9 (DDR3-1600) - 1.5ns @ CL = 10 (DDR3-1333) - 1.5ns @ CL = 9 (DDR3-1333) - 1.5ns @ CL = 8 (DDR3-1333) - 1.87ns @ CL = 8 (DDR3-1066) - 1.87ns @ CL = 7 (DDR3-1066) - 2.5ns @ CL = 6 (DDR3-800) - 2.5ns @ CL = 5 (DDR3-800) * Revision
Marking
256M4 128M8 64M16 JP HX BY LA -125 -125E -125F -15 -15E -15F -187 -187E -25 -25E :B/:D/:F
* * * * * *
Table 1:
Speed Grade -125 -125E -125F -15 -15E -15F -187 -187E -25 -25E
(ns)
tRP
(ns)
CL (ns) 13.75 12.5 11.25 15 13.5 12 15 13.1 15 12.5
13.75 12.5 11.25 15 13.5 12 15 13.1 15 12.5
13.75 12.5 11.25 15 13.5 12 15 13.1 15 12.5
PDF: 09005aef826aa906/Source: 09005aef82a357c3 1Gb_DDR3_D1 .fm - Rev. D 8/1/08 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
1Gb: x4, x8, x16 DDR3 SDRAM Features
Table 2:
Parameter Configuration Refresh count Row addressing Bank addressing Column addressing
Addressing
256 Meg x 4 32 Meg x 4 x 8 banks 8K 16K (A[13:0]) 8 (BA[2:0]) 2K (A[11, 9:0]) 128 Meg x 8 16 Meg x 8 x 8 banks 8K 16K (A[13:0]) 8 (BA[2:0]) 1K (A[9:0]) 64 Meg x 16 8 Meg x 16 x 8 banks 8K 8K (A[12:0]) 8 (BA[2:0]) 1K (A[9:0])
Figure 1:
1Gb DDR3 Part Numbers
Example Part Number: M T 4 1 J 2 5 6 M 4 B Y- 1 5 : B MT41J Configuration Package Speed : Revision
{
:B/:D/:F
Revision
Configuration 256 Meg x 4 128 Meg x 8 64 Meg x 16 256M4 128M8 64M16
Temperature Commercial Industrial temperature None IT
Package 78-ball 8mm x 11.5mm FBGA 78-ball 9mm x 11.5mm FBGA 86-ball 9mm x 15.5mm FBGA 96-ball 9mm x 15.5mm FBGA
Rev. F D B B
Mark JP HX BY LA
-125 -125E -125F -15 -15E -15F -187 -187E -25 -25E
Speed Grade tCK = 1.25ns, CL = 11 tCK = 1.25ns, CL = 10 tCK = 1.25ns, CL = 9 tCK = 1.5ns, CL = 10 tCK = 1.5ns, CL = 9 tCK = 1.5ns, CL = 8 tCK = 1.87ns, CL = 8 tCK = 1.87ns, CL = 7 tCK = 2.5ns, CL = 6 tCK = 2.5ns, CL = 5
FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron's Web site: www.micron.com.
PDF: 09005aef826aa906/Source: 09005aef82a357c3 1Gb_DDR3_D1 .fm - Rev. D 8/1/08 EN
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM Table of Contents Table of Contents
State Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 General Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Functional Block Diagrams. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Ball Assignments and Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 Electrical Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 Absolute Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 Input/Output Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 Thermal Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 Electrical Specifications - IDD Specifications and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 Electrical Characteristics - IDD Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39 Electrical Specifications - DC and AC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 Input Operating Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 AC Overshoot/Undershoot Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42 Slew Rate Definitions for Single-Ended Input Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .46 Slew Rate Definitions for Differential Input Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48 ODT Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49 ODT Resistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49 ODT Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50 ODT Timing Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51 Output Driver Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54 34 Output Driver Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54 34 Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .55 34 Driver Output Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56 Alternative 40 Driver. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57 40 Driver Output Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57 Output Characteristics and Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58 Reference Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 Slew Rate Definitions for Single-Ended Output Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .61 Slew Rate Definitions for Differential Output Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62 Speed Bin Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .63 Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .74 Command and Address Setup, Hold, and Derating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .77 Data Setup, Hold, and Derating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .84 Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .91 Truth Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .91 DESELECT (DES) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .92 NO OPERATION (NOP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .93 ZQ CALIBRATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .93 ACTIVATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .93 READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .93 WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .94 PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .94 REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .95 SELF REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .96 DLL Disable Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .96 Input Clock Frequency Change. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .99 Write Leveling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
PDF: 09005aef826aa906/Source: 09005aef82a357c3 1Gb_DDR3_TOC.fm - Rev. D 8/1/08 EN Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
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1Gb: x4, x8, x16 DDR3 SDRAM Table of Contents
Initialization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Mode Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Mode Register 0 (MR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Mode Register 1 (MR1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Mode Register 2 (MR2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Mode Register 3 (MR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MODE REGISTER SET (MRS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ZQ CALIBRATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ACTIVATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SELF REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Extended Temperature Usage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power-Down Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RESET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . On-Die Termination (ODT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Representation of ODT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Nominal ODT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Dynamic ODT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Synchronous ODT Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ODT Off During READs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Asynchronous ODT Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry). . . . . . . . . . . . . . . . . . . . . . . . . . . . Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106 108 109 113 116 119 126 126 127 129 139 148 148 150 151 158 160 160 160 162 167 170 172 174 176
PDF: 09005aef826aa906/Source: 09005aef82a357c3 1Gb_DDR3_TOC.fm - Rev. D 8/1/08 EN
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM List of Figures List of Figures
Figure 1: Figure 2: Figure 3: Figure 4: Figure 5: Figure 6: Figure 7: Figure 8: Figure 9: Figure 10: Figure 11: Figure 12: Figure 13: Figure 14: Figure 15: Figure 16: Figure 17: Figure 18: Figure 19: Figure 20: Figure 21: Figure 22: Figure 23: Figure 24: Figure 25: Figure 26: Figure 27: Figure 28: Figure 29: Figure 30: Figure 31: Figure 32: Figure 33: Figure 34: Figure 35: Figure 36: Figure 37: Figure 38: Figure 39: Figure 40: Figure 41: Figure 42: Figure 43: Figure 44: Figure 45: Figure 46: Figure 47: Figure 48: Figure 49: Figure 50: Figure 51: Figure 52: Figure 53: Figure 54: Figure 55: Figure 56: 1Gb DDR3 Part Numbers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Simplified State Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 256 Meg x 4 Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 128 Meg x 8 Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 64 Meg x 16 Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 78-Ball FBGA - x4, x8 Ball Assignments (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 86-Ball FBGA - x4, x8 Ball Assignments (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 96-Ball FBGA - x16 Ball Assignments (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 78-Ball FBGA - x4, x8; "JP" . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 78-Ball FBGA - x4, x8; "HX" . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 86-Ball FBGA - x4, x8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 96-Ball FBGA - x16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 Thermal Measurement Point . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 IDD1 Example - DDR3-800, 5-5-5, x8 (-25E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32 IDD2N/IDD3N Example - DDR3-800, 5-5-5, x8 (-25E). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34 IDD4R Example - DDR3-800, 5-5-5, x8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36 Input Signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42 Overshoot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43 Undershoot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43 Single-Ended Requirements for Differential Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44 Definition of Differential AC-Swing and tDVAC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45 Nominal Slew Rate Definition for Single-Ended Input Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .47 Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# . . . . . . . . . . . . . . . . . .48 ODT Levels and I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49 ODT Timing Reference Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51 t AON and tAOF Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 tAONPD and tAOFPD Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53 t ADC Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53 Output Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54 DQ Output Signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .59 Differential Output Signal. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 Reference Output Load for AC Timing and Output Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 Nominal Slew Rate Definition for Single-Ended Output Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .61 Nominal Differential Output Slew Rate Definition for DQS, DQS# . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62 Nominal Slew Rate and tVAC for tIS (Command and Address - Clock) . . . . . . . . . . . . . . . . . . . . . . . . .80 Nominal Slew Rate for tIH (Command and Address - Clock) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .81 Tangent Line for tIS (Command and Address - Clock). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .82 Tangent Line for tIH (Command and Address - Clock) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .83 Nominal Slew Rate and tVAC for tDS (DQ - Strobe) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .87 Nominal Slew Rate for tDH (DQ - Strobe). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .88 Tangent Line for tDS (DQ - Strobe) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .89 Tangent Line for tDH (DQ - Strobe) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .90 Refresh Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .95 DLL Enable Mode to DLL Disable Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .97 DLL Disable Mode to DLL Enable Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .98 DLL Disable tDQSCK Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .99 Change Frequency During Precharge Power-Down. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 Write Leveling Concept . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 Write Leveling Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104 Exit Write Leveling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 Initialization Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107 MRS-to-MRS Command Timing (tMRD). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 MRS-to-nonMRS Command Timing (tMOD). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 Mode Register 0 (MR0) Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 READ Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 Mode Register 1 (MR1) Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 5
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
PDF: 09005aef826aa906/Source: 09005aef82a357c3 1Gb_DDR3_LOF.fm - Rev. D 8/1/08 EN
1Gb: x4, x8, x16 DDR3 SDRAM List of Figures
Figure 57: Figure 58: Figure 59: Figure 60: Figure 61: Figure 62: Figure 63: Figure 64: Figure 65: Figure 66: Figure 67: Figure 68: Figure 69: Figure 70: Figure 71: Figure 72: Figure 73: Figure 74: Figure 75: Figure 76: Figure 77: Figure 78: Figure 79: Figure 80: Figure 81: Figure 82: Figure 83: Figure 84: Figure 85: Figure 86: Figure 87: Figure 88: Figure 89: Figure 90: Figure 91: Figure 92: Figure 93: Figure 94: Figure 95: Figure 96: Figure 97: Figure 98: Figure 99: Figure 100: Figure 101: Figure 102: Figure 103: Figure 104: Figure 105: Figure 106: Figure 107: Figure 108: Figure 109: Figure 110: Figure 111: Figure 112: READ Latency (AL = 5, CL = 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Mode Register 2 (MR2) Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CAS Write Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Mode Register 3 (MR3) Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Multipurpose Register (MPR) Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MPR System Read Calibration with BL8: Fixed Burst Order Single Readout. . . . . . . . . . . . . . . . . . . MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout . . . . . . . . . . . MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble. . . . . . . . . . . . . . . . . . MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble. . . . . . . . . . . . . . . . . . ZQ Calibration Timing (ZQCL and ZQCS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Example: Meeting tRRD (MIN) and tRCD (MIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Example: tFAW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . READ Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Consecutive READ Bursts (BL8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Consecutive READ Bursts (BC4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Nonconsecutive READ Bursts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . READ (BL8) to WRITE (BL8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . READ (BC4) to WRITE (BC4) OTF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . READ to PRECHARGE (BL8). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . READ to PRECHARGE (BC4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . READ to PRECHARGE (AL = 5, CL = 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . READ with Auto Precharge (AL = 4, CL = 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Data Output Timing - tDQSQ and Data Valid Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Data Strobe Timing - READs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Method for Calculating tLZ and tHZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tRPRE Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t RPST Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t WPRE Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tWPST Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write Burst . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Consecutive WRITE (BL8) to WRITE (BL8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Consecutive WRITE (BC4) to WRITE (BC4) via MRS or OTF. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Nonconsecutive WRITE to WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . WRITE (BL8) to READ (BL8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . WRITE to READ (BC4 Mode Register Setting) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . WRITE (BC4 OTF) to READ (BC4 OTF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . WRITE (BL8) to PRECHARGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . WRITE (BC4 Mode Register Setting) to PRECHARGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . WRITE (BC4 OTF) to PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Data Input Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Self Refresh Entry/Exit Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Active Power-Down Entry and Exit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Precharge Power-Down (Fast-Exit Mode) Entry and Exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Precharge Power-Down (Slow-Exit Mode) Entry and Exit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power-Down Entry After READ or READ with Auto Precharge (RDAP) . . . . . . . . . . . . . . . . . . . . . . . Power-Down Entry After WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power-Down Entry After WRITE with Auto Precharge (WRAP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . REFRESH to Power-Down Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ACTIVATE to Power-Down Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PRECHARGE to Power-Down Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MRS Command to Power-Down Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power-Down Exit to Refresh to Power-Down Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RESET Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . On-Die Termination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Dynamic ODT: Without WRITE Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 116 117 119 120 122 123 124 125 127 128 128 129 131 131 132 132 133 133 134 134 134 136 137 137 138 138 140 140 141 142 142 143 143 144 145 146 146 147 148 149 152 153 153 154 154 155 155 156 156 157 157 159 160 164 164
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM List of Figures
Figure 113: Figure 114: Figure 115: Figure 116: Figure 117: Figure 118: Figure 119: Figure 120: Figure 121: Figure 122: Figure 123: Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 . . . . Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4. . . . . . . . . . . . . Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4. . . . . . . . . . . . . Synchronous ODT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Synchronous ODT (BC4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ODT During READs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Asynchronous ODT Timing with Fast ODT Transition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry . . . . Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit. . . . . . Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping . . . . . . . . . Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping. . . . . . . . . 165 166 166 168 169 171 173 175 177 179 180
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM List of Tables List of Tables
Table 1: Table 2: Table 3: Table 4: Table 5: Table 6: Table 7: Table 8: Table 9: Table 10: Table 11: Table 12: Table 13: Table 14: Table 15: Table 16: Table 17: Table 18: Table 19: Table 20: Table 21: Table 22: Table 23: Table 24: Table 25: Table 26: Table 27: Table 28: Table 29: Table 30: Table 31: Table 32: Table 33: Table 34: Table 35: Table 36: Table 37: Table 38: Table 39: Table 40: Table 41: Table 42: Table 43: Table 44: Table 45: Table 46: Table 47: Table 48: Table 49: Table 50: Table 51: Key Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Addressing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 78-Ball FBGA - x4, x8 Ball Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 86-Ball FBGA - x4, x8 Ball Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 96-Ball FBGA - x16 Ball Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 Input/Output Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 IDD Measurement Conditions Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 Definition of Switching for Command and Address Input Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 Definition of Switching for Data Pins. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30 IDD Measurement Conditions for IDD0 and IDD1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31 IDD Measurement Conditions for Power-Down Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33 IDD Measurement Conditions for IDD4R, IDD4W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35 IDD Measurement Conditions for IDD5B, IDD6, IDD6ET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37 IDD Measurement Conditions for IDD7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38 IDD7 Patterns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38 IDD Maximum Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39 DC Electrical Characteristics and Operating Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 DC Electrical Characteristics and Input Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 AC Input Operating Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41 Control and Address Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42 Clock, Data, Strobe, and Mask Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43 Differential Input Operating Conditions (CK, CK# and DQS, DQS#) . . . . . . . . . . . . . . . . . . . . . . . . . . .44 Allowed Time Before Ringback (tDVAC) for CK - CK# and DQS - DQS#. . . . . . . . . . . . . . . . . . . . . . . . .45 Single-Ended Input Slew Rate Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .46 Differential Input Slew Rate Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48 On-Die Termination DC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49 RTT Effective Impedances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50 ODT Sensitivity Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51 ODT Temperature and Voltage Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51 ODT Timing Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51 Reference Settings for ODT Timing Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 34 Driver Impedance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .55 34 Driver Pull-Up and Pull-Down Impedance Calculations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .55 34 Driver IOH/IOL Characteristics: VDD = VDDQ = 1.5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56 34 Driver IOH/IOL Characteristics: VDD = VDDQ = 1.575V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56 34 Driver IOH/IOL Characteristics: VDD = VDDQ = 1.425V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56 34 Output Driver Sensitivity Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56 34 Output Driver Voltage and Temperature Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57 40 Driver Impedance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57 40 Output Driver Sensitivity Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57 40 Output Driver Voltage and Temperature Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58 Single-Ended Output Driver Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58 Differential Output Driver Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .59 Single-Ended Output Slew Rate Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .61 Differential Output Slew Rate Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62 DDR3-800 Speed Bins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .63 DDR3-1066 Speed Bins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .64 DDR3-1333 Speed Bins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
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1Gb: x4, x8, x16 DDR3 SDRAM List of Tables
Table 52: Table 54: Table 55: Table 56: Table 57: Table 58: Table 59: Table 60: Table 61: Table 62: Table 63: Table 64: Table 65: Table 66: Table 67: Table 68: Table 69: Table 70: Table 71: Table 72: Table 73: Table 74: Table 75: Table 76: Table 77: Table 78: Table 79: Table 80: Table 81: Table 83: DDR3-1600 Speed Bins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .66 Command and Address Setup and Hold Values Referenced at 1 V/ns - AC/DC-Based . . . . . . . . . . .77 DDR3-800, DDR3-1066, DDR3-1333, and DDR3-1600 Derating Values for tIS/tIH - AC/DC-Based78 DDR3-1333 and DDR3-1600 Derating Values for tIS/tIH - AC/DC-Based . . . . . . . . . . . . . . . . . . . . . . .78 Minimum Required Time tVAC Above VIH(AC) for Valid Transition . . . . . . . . . . . . . . . . . . . . . . . . . . . .79 Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) - AC/DC-Based . . . . . . . . . . . . . . . . . .84 DDR3-800, DDR3-1066, DDR3-1333, and DDR3-1600 Derating Values for tDS/tDH - AC/DC-Based85 DDR3-1333and DDR3-1600 Derating Values for tDS/tDH - AC/DC-Based . . . . . . . . . . . . . . . . . . . . .85 Required Time tVAC Above VIH(AC) (Below VIL[AC]) for Valid Transition. . . . . . . . . . . . . . . . . . . . . . . .86 Truth Table - Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .91 Truth Table - CKE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .92 READ Command Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .94 WRITE Command Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .94 READ Electrical Characteristics, DLL Disable Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .99 Write Leveling Matrix. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102 Burst Order. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111 MPR Functional Description of MR3 Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 MPR Readouts and Burst Order Bit Mapping. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 Self Refresh Temperature and Auto Self Refresh Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 Self Refresh Mode Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 Command to Power-Down Entry Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151 Power-Down Modes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152 Truth Table - ODT (Nominal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 ODT Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 Dynamic ODT Specific Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 Mode Registers for Rtt_nom. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 Mode Registers for Rtt_wr. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 Timing Diagrams for Dynamic ODT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 Synchronous ODT Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168 ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period . . . . . . . . . . . . . . . . 175
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM State Diagram
State Diagram
Figure 2:
Power applied
Simplified State Diagram
CKE L
Power on
Reset procedure
Initialization
MRS, MPR, write leveling
SRE MRS
Self refresh
ZQCL
SRX REF
From any state
RESET ZQ calibration
ZQCL/ZQCS
Idle
Refreshing
ACT
PDE PDX
Active powerdown
PDX CKE L PDE
Activating
Precharge powerdown
CKE L
Bank active
WRITE WRITE WRITE AP READ AP READ WRITE READ READ
Writing
Reading
WRITE AP WRITE AP READ AP
READ AP
PRE, PREA
Writing
PRE, PREA
PRE, PREA
Reading
Precharging
Automatic sequence Command sequence
ACT = ACTIVATE MPR = Multipurpose register MRS = Mode register set PDE = Power-down entry PDX = Power-down exit PRE = PRECHARGE
PREA = PRECHARGE ALL READ = RD, RDS4, RDS8 READ AP = RDAP, RDAPS4, RDAPS8 REF = REFRESH RESET = START RESET PROCEDURE SRE = Self refresh entry
SRX = Self refresh exit WRITE = WR, WRS4, WRS8 WRITE AP = WRAP, WRAPS4, WRAPS8 ZQCL = ZQ LONG CALIBRATION ZQCS = ZQ SHORT CALIBRATION
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1Gb: x4, x8, x16 DDR3 SDRAM Functional Description
Functional Description
The DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM consists of a single 8n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clockcycle data transfers at the I/O pins. The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the data strobes. The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, command, and address signals are registered at every positive edge of CK. Input data is registered on the first rising edge of DQS after the WRITE preamble, and output data is referenced on the first rising edge of DQS after the READ preamble. Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVATE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVATE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE commands are used to select the bank and the starting column location for the burst access. DDR3 SDRAM use READ and WRITE BL8 and BC4. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM allows for concurrent operation, thereby providing high bandwidth by hiding row precharge and activation time. A self refresh mode is provided, along with a power-saving, power-down mode.
General Notes
* The functionality and the timing specifications discussed in this data sheet are for the DLL enable mode of operation (normal operation). * Throughout the data sheet, the various figures and text refer to DQs as "DQ." The DQ term is to be interpreted as any and all DQ collectively, unless specifically stated otherwise. * The terms "DQS" and "CK" found throughout the data sheet are to be interpreted as DQS, DQS# and CK, CK# respectively, unless specifically stated otherwise. * Complete functionality may be described throughout the entire document, and any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements. * Any specific requirement takes precedence over a general statement. * Any functionality not specifically stated herewithin is considered undefined, illegal, and not supported and can result in unknown operation. * Row addressing is denoted as A[n:0](1Gb: n = 12 [x16]; 1Gb: n = 13 [x4, x8]).
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM Functional Block Diagrams
Functional Block Diagrams
DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM. Figure 3:
ODT ZQ RZQ RESET# CKE VSSQ A12
ZQCL, ZQCS ZQ CAL To pull-up/pull-down networks
256 Meg x 4 Functional Block Diagram
ODT control
Control logic
VDDQ/2 BC4 (burst chop)
Command decode
CK, CK# CS# RAS# CAS# WE#
OTF
Mode registers 16
Refresh counter
Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 Rowaddress MUX
14
Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1
32
Columns 0, 1, and 2 CK, CK# sw1 DLL
RTT_NOM
RTT_WR sw2
(1 . . . 4) READ FIFO and data MUX 4 READ drivers
14 Bank 0 rowaddress latch and decoder Bank 0 memory array (16,384 x 256 x 32)
DQ[3:0] DQS, DQS# DQ[3:0]
16,384
14
VDDQ/2
Sense amplifiers 8,192
32 BC4 OTF
BC4 sw1
RTT_NOM
RTT_WR sw2
3
I/O gating DM mask logic
Bank control logic
DM (1, 2) DQS, DQS#
A[13:0] BA[2:0]
17
Address register
3
256 (x32)
VDDQ/2 32 Data interface 4 Data WRITE drivers and input logic RTT_NOM sw1 RTT_WR sw2
Column decoder Columnaddress counter/ latch
8 3 Columns 0, 1, and 2 CK, CK#
11
DM
Column 2 (select upper or lower nibble for BC4)
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM Functional Block Diagrams
Figure 4:
ODT ZQ RZQ RESET# CKE VSSQ A12
BC4 (burst chop)
Command decode
128 Meg x 8 Functional Block Diagram
ODT control ZQ CAL To ODT/output drivers
Control logic
ZQCL, ZQCS
CK, CK# CS# RAS# CAS# WE#
VDDQ/2 Columns 0, 1, and 2 CK, CK# sw1 DLL (1 . . . 8) 64 READ FIFO and data MUX DQ8 8 READ drivers DQ[7:0] DQS, DQS# DQ[7:0] TDQS# sw2 RTT_NOM RTT_WR
OTF
Mode registers 16
Refresh counter
Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 14 Rowaddress MUX
14
Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1
14
Bank 0 rowaddress 16,384 latch and decoder
Bank 0 memory array (16,384 x 128 x 64)
VDDQ/2
Sense amplifiers 8,192
64 BC4 BC4 OTF sw1 RTT_NOM RTT_WR sw2
3
I/O gating DM mask logic
Bank control logic
(1, 2)
DQS, DQS#
A[13:0] BA[2:0]
17
Address register
3
(128 x64)
VDDQ/2 64 Data interface 8 Data WRITE drivers and input logic RTT_NOM sw1 RTT_WR sw2
Column decoder Columnaddress counter/ latch
7 3 Columns 0, 1, and 2 CK, CK#
10
DM/TDQS (shared pin)
Column 2 (select upper or lower nibble for BC4)
Figure 5:
ODT ZQ RZQ RESET# CKE VSSQ A12
64 Meg x 16 Functional Block Diagram
ODT control ZQ CAL To ODT/output drivers
Control logic
ZQCL, ZQCS
CK, CK# CS#
Command decode
VDDQ/2 BC4 (burst chop) Column 0, 1, and 2 CK, CK# sw1 DLL (1 . . . 16) 128 READ FIFO and data MUX 16 READ drivers sw2 RTT_NOM RTT_WR
RAS# CAS# WE#
OTF
Mode registers 16
Refresh counter
Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 13 Rowaddress MUX
13
Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1
13
Bank 0 rowaddress latch and decoder
8,192
Bank 0 memory array (8192 x 128 x 128)
DQ[15:0] LDQS, LDQS#, UDQS, UDQS# DQ[15:0]
VDDQ/2
Sense amplifiers 16,384
128 BC4 OTF 3 BC4 sw1 RTT_NOM RTT_WR sw2 LDQS, LDQS# UDQS, UDQS#
I/O gating DM mask logic
Bank control logic (1 . . . 4)
A[12:0] BA[2:0]
16
Address register
3
(128 x128)
VDDQ/2 128 Data interface 16 Data WRITE drivers and input logic RTT_NOM sw1 RTT_WR sw2
Column decoder Columnaddress counter/ latch
7
10
(1, 2) 3 Columns 0, 1, and 2 CK, CK# Column 2 (select upper or lower nibble for BC4)
LDM/UDM
PDF: 09005aef826aa906/Source: 09005aef82a357c3 1Gb_DDR3_D2.fm - Rev. D 8/1/08 EN
13
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions
Ball Assignments and Descriptions
Figure 6: 78-Ball FBGA - x4, x8 Ball Assignments (Top View)
1 A
VSS
2
3
4
5
6
7
8
9
VDD
NC
NF, NF/TDQS#
VSS
VDD
B
VSS VSSQ DQ0
DM, DM/TDQS
VSSQ
VDDQ
C
VDDQ DQ2 DQS DQ1 DQ3 VSSQ
D
VSSQ NF, DQ6 DQS# VDD VSS VSSQ
E
VREFDQ VDDQ NF, DQ4 NF, DQ7 NF, DQ5 VDDQ
F
NC VSS RAS# CK VSS NC
G
ODT VDD CAS# CK# VDD CKE
H
NC CS# WE# A10/AP ZQ NC
J
VSS BA0 BA2 NC VREFCA VSS
K
VDD A3 A0 A12/BC# BA1 VDD
L
VSS A5 A2 A1 A4 VSS
M
VDD A7 A9 A11 A6 VDD
N
VSS RESET# A13 NC A8 VSS
Notes:
1. Ball descriptions listed in Table 3 on page 17 are listed as "x4, x8" if unique; otherwise, x4 and x8 are the same. 2. A comma separates the configuration; a slash defines a selectable function. 3. Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies to the x8 configuration only--selectable between NF or TDQS# via MRS (symbols are defined in Table 3 on page 17).
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions
Figure 7: 86-Ball FBGA - x4, x8 Ball Assignments (Top View)
1
2
3
4
5
6
7
8
9
A
NC NC NC NC
B C D
VSS VDD NC
NF, NF/TDQS#
VSS
VDD
E
VSS VSSQ DQ0
DM, DM/TDQS
VSSQ
VDDQ
F
VDDQ DQ2 DQS DQ1 DQ3 VSSQ
G
VSSQ NF, DQ6 DQS# VDD VSS VSSQ
H
VREFDQ VDDQ NF, DQ4 NF, DQ7 NF, DQ5 VDDQ
J
NC VSS RAS# CK VSS NC
K
ODT VDD CAS# CK# VDD CKE
L
NC CS# WE# A10/AP ZQ NC
M
VSS BA0 BA2 NC VREFCA VSS
N
VDD A3 A0 A12/BC# BA1 VDD
P
VSS A5 A2 A1 A4 VSS
R
VDD A7 A9 A11 A6 VDD
T
VSS RESET# A13 NC A8 VSS
U V W
NC NC NC NC
Notes:
1. Ball descriptions listed in Table 4 on page 19 are listed as "x4, x8" if unique; otherwise, x4 and x8 are the same. 2. A comma separates the configuration; a slash defines a selectable function. 3. Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies to the x8 configuration only--selectable between NF or TDQS# via MRS (symbols are defined in Table 4 on page 19).
PDF: 09005aef826aa906/Source: 09005aef82a357c3 1Gb_DDR3_D2.fm - Rev. D 8/1/08 EN
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions
Figure 8: 96-Ball FBGA - x16 Ball Assignments (Top View)
1
2
3
4
5
6
7
8
9
A
VDDQ DQ13 DQ15 DQ12 VDDQ VSS
B
VSSQ VDD VSS UDQS# DQ14 VSSQ
C
VDDQ DQ11 DQ9 UDQS DQ10 VDDQ
D
VSSQ VDDQ UDM DQ8 VSSQ VDD
E
VSS VSSQ DQ0 LDM VSSQ VDDQ
F
VDDQ DQ2 LDQS DQ1 DQ3 VSSQ
G
VSSQ DQ6 LDQS# VDD VSS VSSQ
H
VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ
J
NC VSS RAS# CK VSS NC
K
ODT VDD CAS# CK# VDD CKE
L
NC CS# WE# A10/AP ZQ NC
M
VSS BA0 BA2 NC VREFCA VSS
N
VDD A3 A0 A12/BC# BA1 VDD
P
VSS A5 A2 A1 A4 VSS
R
VDD A7 A9 A11 A6 VDD
T
VSS RESET# NC NC A8 VSS
Notes:
1. Ball descriptions listed in Table 5 on page 21 are listed as "x4, x8" if unique; otherwise, x4 and x8 are the same. 2. A comma separates the configuration; a slash defines a selectable function. 3. Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies to the x8 configuration only--selectable between NF or TDQS# via MRS (symbols are defined in Table 5 on page 21).
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions
Table 3: 78-Ball FBGA - x4, x8 Ball Descriptions
Symbol A0, A1, A2, A3, A4, A5, A6, A7, A8, A9, A10/AP, A11, A12/BC#, A13 Type Input Description Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/ WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4 burst chop). See Table 62 on page 91. Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. Clock: CK and CK# are differential clock inputs. All control and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE power-down and SELF REFRESH operations (all banks idle), or active power-down (row active in any bank). CKE is synchronous for power-down entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during power-down. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA. Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. CS# is referenced to VREFCA. Input data mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with the input data during a write access. Although the DM ball is input-only, the DM loading is designed to match that of the DQ and DQS balls. DM is referenced to VREFDQ. DM has an optional use as TDQS on the x8. On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#, and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA.
Ball Assignments K3, L7, L3, K2, L8, L2, M8, M2, N8, M3, H7, M7, K7, N3
J2, K8, J3
BA0, BA1, BA2
Input
F7, G7
CK, CK#
Input
G9
CKE
Input
H2
CS#
Input
B7
DM
Input
G1
ODT
Input
F3, G3, H3
RAS#, CAS#, WE#
Input
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions
Table 3: 78-Ball FBGA - x4, x8 Ball Descriptions (continued)
Symbol RESET# Type Input Description Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH 0.8 x VDDQ and DC LOW 0.2 x VDDQ. RESET# assertion and desertion are asynchronous. Data input/output: Bidirectional data bus for the x4 configuration. DQ[3:0] are referenced to VREFDQ. Data input/output: Bidirectional data bus for the x8 configuration. DQ[7:0] are referenced to VREFDQ. Data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data. Termination data strobe: Applies to the x8 configuration only. When TDQS is enabled, DM is disabled, and the TDQS and TDQS# balls provide termination resistance. Power supply: 1.5V 0.075V. DQ power supply: 1.5V 0.075V. Isolated on the device for improved noise immunity. Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. Reference voltage for data: VREFDQ must be maintained at all times (including self refresh) for proper device operation. Ground.
Ball Assignments N2
B3, C7, C2, C8 B3, C7, C2, C8, E3, E8, D2, E7 C3, D3 B7, A7
DQ0, DQ1, DQ2, DQ3 DQ0, DQ1, DQ2, DQ3, DQ4, DQ5, DQ6, DQ7 DQS, DQS# TDQS, TDQS#
I/O I/O
I/O Output
A2, A9, D7, G2, G8, K1, K9, M1, M9 B9, C1, E2, E9 J8
VDD VDDQ VREFCA
Supply Supply Supply
E1 A1, A8, B1, D8, F2, F8, J1, J9, L1, L9, N1, N9 B2, B8, C9, D1, D9 H8 A3, J7, N7, F9, H1, F1, H9 A7, D2, E3, E7, E8
VREFDQ VSS
Supply Supply
VSSQ ZQ NC NF
Supply
DQ ground: Isolated on the device for improved noise immunity.
Reference External reference ball for output drive calibration: This ball is tied to an external 240 resistor (RZQ), which is tied to VSSQ. - - No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls). No function: When configured as a x4 device, these balls are NF. When configured as a x8 device, these balls are defined as TDQS#, DQ[7:4].
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions
Table 4: 86-Ball FBGA - x4, x8 Ball Descriptions
Symbol A0, A1, A2, A3, A4, A5, A6, A7, A8, A9 A10/AP, A11, A12/BC#, A13 Type Input Description Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/ WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4 burst chop). See Table 62 on page 91. Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. Clock: CK and CK# are differential clock inputs. All control and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE power-down and SELF REFRESH operations (all banks idle), or active power-down (row active in any bank). CKE is synchronous for power-down entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during power-down. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA. Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. CS# is referenced to VREFCA. Input data mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with the input data during a write access. Although the DM ball is input-only, the DM loading is designed to match that of the DQ and DQS balls. DM is referenced to VREFDQ. DM has an optional use as TDQS on the x8. On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#, and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA.
Ball Assignments N3, P7, P3, N2, P8, P2, R8, R2, T8, R3, L7, R7, N7, T3
M2, N8, M3
BA0, BA1, BA2
Input
J7, K7
CK, CK#
Input
K9
CKE
Input
L2
CS#
Input
E7
DM
Input
K1
ODT
Input
J3, K3, L3
RAS#, CAS#, WE#
Input
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19
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions
Table 4: 86-Ball FBGA - x4, x8 Ball Descriptions (continued)
Symbol RESET# Type Input Description Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH 0.8 x VDDQ and DC LOW 0.2 x VDDQ. RESET# assertion and desertion are asynchronous. Data input/output: Bidirectional data bus for the x4 configuration. DQ[3:0] are referenced to VREFDQ. Data input/output: Bidirectional data bus for the x8 configuration. DQ[7:0] are referenced to VREFDQ. Data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data. Termination data strobe: Applies to the x8 configuration only. When TDQS is enabled, DM is disabled, and the TDQS and TDQS# balls provide termination resistance. Power supply: 1.5V 0.075V. DQ power supply: 1.5V 0.075V. Isolated on the device for improved noise immunity. Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. Reference voltage for data: VREFDQ must be maintained at all times (including self refresh) for proper device operation. Ground.
Ball Assignments T2
E3, F7, F2, F8 E3, F7, F2, F8, H3, H8, G2, H7 F3, G3 E7, D7
DQ0, DQ1, DQ2, DQ3 DQ0, DQ1, DQ2, DQ3, DQ4, DQ5, DQ6, DQ7 DQS, DQS# TDQS, TDQS#
I/O I/O
I/O Output
D2, D9, G7, K2, K8, N1, N9, R1, R9 E9, F1, H2, H9 M8
VDD VDDQ VREFCA
Supply Supply Supply
H1 D1, D8, E1, G8, J2, J8, M1, M9, P1, P9, T1, T9 E2, E8, F9, G1, G9 L8 A1, A3, A7, A9, D3, J1, J9, L1, L9, M7, T7, W1, W3, W7, W9 D7, G2, H3, H7, H8
VREFDQ VSS
Supply Supply
VSSQ ZQ NC
Supply
DQ ground: Isolated on the device for improved noise immunity.
Reference External reference ball for output drive calibration: This ball is tied to an external 240 resistor (RZQ), which is tied to VSSQ. - No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls). No function: When configured as a x4 device, these balls are NF. When configured as a x8 device, these balls are defined as TDQS#, DQ[7:4].
NF
-
PDF: 09005aef826aa906/Source: 09005aef82a357c3 1Gb_DDR3_D2.fm - Rev. D 8/1/08 EN
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions
Table 5: 96-Ball FBGA - x16 Ball Descriptions
Symbol A0, A1, A2, A3, A4, A5, A6, A7, A8, A9 A10/AP, A11, A12/BC# Type Input Description Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/ WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4 burst chop). See Table 62 on page 91. Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. Clock: CK and CK# are differential clock inputs. All control and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE power-down and SELF REFRESH operations (all banks idle),or active power-down (row active in any bank). CKE is synchronous for power-down entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during power-down. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA. Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. CS# is referenced to VREFCA. Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte input data is masked when LDM is sampled HIGH along with the input data during a write access. Although the LDM ball is input-only, the LDM loading is designed to match that of the DQ and DQS balls. LDM is referenced to VREFDQ. On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#, UDQS, UDQS#, LDM, and UDM for the x16; DQ0[7:0], DQS, DQS#, DM/TDQS, and NF/ TDQS# (when TDQS is enabled) for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA.
Ball Assignments N3, P7, P3, N2, P8, P2, R8, R2, T8, R3, L7, R7, N7
M2, N8, M3
BA0, BA1, BA2
Input
J7, K7
CK, CK#
Input
K9
CKE
Input
L2
CS#
Input
E7
LDM
Input
K1
ODT
Input
J3, K3, L3
RAS#, CAS#, WE#
Input
PDF: 09005aef826aa906/Source: 09005aef82a357c3 1Gb_DDR3_D2.fm - Rev. D 8/1/08 EN
21
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions
Table 5: 96-Ball FBGA - x16 Ball Descriptions (continued)
Symbol RESET# Type Input Description Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH 0.8 x VDDQ and DC LOW 0.2 x VDDQ. RESET# assertion and desertion are asynchronous. Input data mask: UDM is an upper-byte, input mask signal for write data. Upper-byte input data is masked when UDM is sampled HIGH along with that input data during a WRITE access. Although the UDM ball is input-only, the UDM loading is designed to match that of the DQ and DQS balls. UDM is referenced to VREFDQ. Data input/output: Lower byte of bidirectional data bus for the x16 configuration. DQ[7:0] are referenced to VREFDQ. Data input/output: Upper byte of bidirectional data bus for the x16 configuration. DQ[15:8] are referenced to VREFDQ.
Ball Assignments T2
D3
UDM
Input
E3, F7, F2, F8, H3, H8, G2, H7 D7, C3, C8, C2, A7, A2, B8, A3 F3, G3 C7, B7
DQ0, DQ1, DQ2, DQ3, DQ4, DQ5, DQ6, DQ7 DQ8, DQ9, DQ10, DQ11, DQ12, DQ13, DQ14, DQ15 LDQS, LDQS# UDQS, UDQS#
I/O
I/O
I/O I/O
Lower byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data. Upper byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. DQS is center-aligned to write data. Power supply: 1.5V 0.075V. DQ power supply: 1.5V 0.075V. Isolated on the device for improved noise immunity. Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. Reference voltage for data: VREFDQ must be maintained at all times (including self refresh) for proper device operation. Ground.
B2, D9, G7, K2, K8, N1, N9, R1, R9 A1, A8, C1, C9, D2, E9, F1, H2, H9 M8
VDD VDDQ VREFCA
Supply Supply Supply
H1 A9, B3, E1, G8, J2, J8, M1, M9, P1, P9, T1, T9 B1, B9, D1, D8, E2, E8, F9, G1, G9 L8 J1, J9, L1, L9, M7, T3, T7
VREFDQ VSS
Supply Supply
VSSQ ZQ NC
Supply
DQ ground: Isolated on the device for improved noise immunity.
Reference External reference ball for output drive calibration: This ball is tied to an external 240 resistor (RZQ), which is tied to VSSQ. - No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls).
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1Gb: x4, x8, x16 DDR3 SDRAM Package Dimensions
Package Dimensions
Figure 9: 78-Ball FBGA - x4, x8; "JP"
0.8 0.1 Seating plane 0.12 A A
78X O0.45 Dimensions apply to solder balls postreflow on O0.33 NSMD ball pads.
8 0.15
9 8 7 3 2 1 A B C D
Ball A1 ID
Ball A1 ID
0.8 TYP
E F
9.6 CTR
G H J K L M N
11.5 0.15
0.8 TYP
1.2 MAX 6.4 CTR 0.25 MIN
Notes:
1. All dimensions are in millimeters.
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1Gb: x4, x8, x16 DDR3 SDRAM Package Dimensions
Figure 10: 78-Ball FBGA - x4, x8; "HX"
0.8 0.1 Seating plane 0.12 A A
78X O0.45 Solder ball material: SAC305. Dimensions apply to solder balls postreflow on O0.33 NSMD ball pads.
Ball A1 ID 987 321 A B C D E F
Ball A1 ID
9.6 CTR
G H J K L 0.8 TYP M N
11.5 0.15
0.8 TYP 6.4 CTR 9 0.15
1.2 MAX 0.25 MIN
Notes:
1. All dimensions are in millimeters.
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1Gb: x4, x8, x16 DDR3 SDRAM Package Dimensions
Figure 11: 86-Ball FBGA - x4, x8
0.8 0.1 Seating plane 0.12 A A
86X O0.45 Dimensions apply to solder balls post-reflow on O0.33 NSMD ball pads.
Ball A1 ID 987 321 A
Ball A1 ID
0.8 TYP
D E F G H J
14.4 CTR
K L M N P R T
15.5 0.15
2.4 TYP W 0.8 TYP 6.4 CTR 9 0.15 1.2 MAX 0.25 MIN
Notes:
1. All dimensions are in millimeters.
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1Gb: x4, x8, x16 DDR3 SDRAM Package Dimensions
Figure 12: 96-Ball FBGA - x16
0.8 0.1 Seating plane 0.12 A A
96X O0.45 Solder ball material: SAC305. Dimensions apply to solder balls post-reflow on O0.33 NSMD ball pads.
Ball A1 ID 9 8 7 3 2 1
Ball A1 ID
A B C D E F G
12 CTR
H J K L M N P R S
15.5 0.15
0.8 TYP
0.8 TYP 6.4 CTR 9 0.15
1.2 MAX 0.25 MIN
Notes:
1. All dimensions are in millimeters.
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications
Electrical Specifications
Absolute Ratings
Stresses greater than those listed in Table 6 may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 6:
Symbol VDD VDDQ VIN, VOUT TC TSTG
Absolute Maximum Ratings
Parameter VDD supply voltage relative to VSS VDD supply voltage relative to VSSQ Voltage on any pin relative to VSS Operating case temperature Storage temperature Notes: Min -0.4 -0.4 -0.4 0 -55 Max 1.975 1.975 1.975 95 150 Units V V V C C 2, 3 Notes 1
1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be greater than 0.6 x VDDQ. When VDD and VDDQ are less than 500mV, VREF may be 300mV. 2. MAX operating case temperature. TC is measured in the center of the package (see Figure 13 on page 28). 3. Device functionality is not guaranteed if the DRAM device exceeds the maximum TC during operation.
Input/Output Capacitance
Table 7: Input/Output Capacitance
Note 1 applies to the entire table DDR3-800 Capacitance Parameters CK and CK# C: CK to CK# Single-end I/O: DQ, DM Differential I/O: DQS, DQS#, TDQS, TDQS# C: DQS to DQS#, TDQS, TDQS# C: DQ to DQS Inputs (CTRL, CMD, ADDR) C: CTRL to CK C: CMD_ADDR to CK Notes: Symbol CCK CDCK CIO CIO CDDQS CDIO CI CDI_CTRL CDI_CMD_ADDR Min 0.8 0 1.5 1.5 0 -0.5 0.75 -0.5 -0.5 Max 1.6 0.15 3.0 3.0 0.2 0.3 1.5 0.3 0.5 DDR3-1066 DDR3-1333 DDR3-1600 Min 0.8 0 1.5 1.5 0 -0.5 0.75 -0.5 -0.5 Max 1.6 0.15 3.0 3.0 0.2 0.3 1.5 0.3 0.5 Min 0.8 0 1.5 1.5 0 -0.5 0.75 -0.4 -0.4 Max 1.4 0.15 2.5 2.5 0.15 0.3 1.3 0.2 0.4 Min 0.8 0 1.5 1.5 0 -0.5 0.75 -0.4 -0.4 Max Units Notes 1.4 0.15 2.3 2.3 0.15 0.3 1.3 0.2 0.4 pF pF pF pF pF pF pF pF pF 2 3 3 4 5 6 7
1. VDD = +1.5V 0.075mV, VDDQ = VDD, VREF = VSS, f = 100 MHz, TC = 25C. VOUT(DC) = 0.5 x VDDQ, VOUT (peak-to-peak) = 0.1V. 2. DM input is grouped with I/O pins, reflecting the fact that they are matched in loading. 3. Includes TDQS, TDQS#. CDDQS is for DQS vs. DQS# and TDQS vs. TDQS# separately. 4. CDIO = CIO (DQ) - 0.5 x (CIO [DQS] + CIO [DQS#]). 5. Excludes CK, CK#; CTRL = ODT, CS#, and CKE; CMD = RAS#, CAS#, and WE#; ADDR = A[n:0], BA[2:0]. 6. CDI_CTRL = CI (CTRL) - 0.5 x (CCK [CK] + CCK [CK#]). 7. CDI_CMD_ADDR = CI (CMD_ADDR) - 0.5 x (CCK [CK] + CCK [CK#]).
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1Gb: x4, x8, x16 DDR3 SDRAM Thermal Characteristics
Thermal Characteristics
Table 8: Thermal Characteristics
Parameter/Condition Operating case temperature Junction-to-case (TOP) 78-ball 86-ball 96-ball Notes: Symbol TC TC JC Value 0 to 85 0 to 95 3.2 2.8 2.8 Units C C C/W Notes 1, 2, 3 1, 2, 3, 4 5
1. MAX operating case temperature. TC is measured in the center of the package (see Figure 13). 2. A thermal solution must be designed to ensure the DRAM device does not exceed the maximum TC during operation. 3. Device functionality is not guaranteed if the DRAM device exceeds the maximum TC during operation. 4. If TC exceeds 85C, the DRAM must be refreshed externally at 2X refresh, which is a 3.9s interval refresh rate. The use of SRT or ASR (if available) must be enabled. 5. The thermal resistance data is based off of a number of samples from multiple lots and should be viewed as a typical number.
Figure 13: Thermal Measurement Point
(L/2)
Tc test point
L
(W/2) W
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions
Electrical Specifications - IDD Specifications and Conditions
The following definitions are used within the IDD measurement tables: * LOW: VIN VIL(AC) MAX; HIGH: VIN VIH(AC) MIN * Stable: Inputs are stable at a HIGH or LOW level * Floating: Inputs are VREF = VDDQ/2 * Switching: See Tables 10 and 11 Table 9: IDD Measurement Conditions Reference
Table Number Table 13 on page 31 Table 14 on page 33 Table 15 on page 35 Table 16 on page 37 Table 17 on page 38 Measurement Conditions IDD0 and IDD1 IDD2Ps, IDD2Pf, IDD2Q, IDD2N, IDD3P, and IDD3N IDD4R, IDD4W IDD5B, IDD6, IDD6ET IDD7 (see Table 18 on page 38)
Table 10:
Definition of Switching for Command and Address Input Signals
Switching for Address (Row/Column) and Command Signals (CS#, RAS#, CAS#, and/or WE#) Address (row/column) Bank address Command (CS#, RAS#, CAS#, WE#) If not otherwise stated, inputs are stable at HIGH or LOW during 4 clocks and then change to the opposite value (Ax Ax Ax Ax Ax Ax Ax Ax Ax Ax Ax Ax . . . ) If not otherwise stated, the bank addresses should be switched in a similar fashion as the row/column addresses Define command background pattern = D D D D D D D D D D D D . . . where: D = (CS#, RAS#, CAS#, WE#) = (HIGH, LOW, LOW, LOW) D = (CS#, RAS#, CAS#, WE#) = (HIGH, HIGH, HIGH, HIGH) If other commands are necessary (ACTIVATE for IDD0 or READ for IDD4R), the background pattern command is substituted by the respective CS#, RAS#, CAS#, and WE# levels of the necessary command
Table 11:
Definition of Switching for Data Pins
Switching for Data Pins (DQ, DQS, DM) Data strobe (DQS) Data (DQ) Data masking (DM) Data strobe is changing between HIGH and LOW after every clock cycle Data DQ is changing between HIGH and LOW every other data transfer (once per clock) for DQ signals, which means that data DQ is stable during one clock No switching; DM must always be driven LOW
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions
Table 12: Timing Parameters
DDR3-800 -25E IDD Parameter
t
DDR3-1066 -187E 7-7-7 7 13.13 50.63 37.5 13.13 37.5 50 7.5 10 110 -187 8-8-8 8 15 52.50 37.5 15 37.5 50 7.5 10 110 -15F 8-8-8 8 12 48 36 12 30 45 6 7.5 110
DDR3-1333 -15E 9-9-9 1.5 9 13.5 49.5 36 13.5 30 45 6 7.5 110 10 15 51 36 15 30 45 6 7.5 110 9 11.25 46.25 35 11.25 30 40 6 7.5 110 -15 10-10-10 -125F 9-9-9
DDR3-1600 -125E -125
-25 6-6-6 2.5 6 15 52.5 37.5 15 40 50 10 10 110
5-5-5 5 12.5 50 37.5 12.5 40 50 10 10 110 Notes: 1. 2. 3. 4.
10-10-10 11-11-11 Units 1.25 10 12.5 47.5 35 12.5 30 40 6 7.5 110 11 13.75 48.75 35 13.75 30 40 6 7.5 110 ns CK ns ns ns ns ns ns ns ns ns
CK (MIN) IDD RCD (MIN) IDD RC (MIN) IDD RAS (MIN) IDD RP (MIN) FAW IDD x4, x8 x16 x4, x8 x16
1.875
CL IDD
t t t t t
tRRD tRFC
IDD specifications are tested after the device is properly initialized. Input slew rate is specified by AC parametric test conditions. IDD parameters are specified with ODT and the output buffer is disabled (MR1[12]). Optional ASR is disabled unless stated otherwise.
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions
Table 13: IDD Measurement Conditions for IDD0 and IDD1
IDD0: Operating Current 0 One Bank ACTIVATE to PRECHARGE - HIGH On
t
IDD Test Timing example CKE External clock
t
IDD1: Operating Current 1 One Bank ACTIVATE to READ to PRECHARGE Figure 14 on page 32 HIGH On
t
Notes
CK
CK (MIN) IDD RC (MIN) IDD n/a n/a n/a n/a n/a
t
CK (MIN) IDD RC (MIN) IDD
tRC tRAS tRCD tRRD tRC
t t
t t
RAS (MIN) IDD
RAS (MIN) IDD n/a n/a CL IDD 0
RCD (MIN) IDD
CL AL CS# Command inputs
HIGH between ACTIVATE and PRECHARGE Switching--the only exceptions are ACTIVATE and PRECHARGE commands; Example of -25E IDD0 pattern: A0DDDDDDDDDDDDDDP0
HIGH between ACTIVATE, READ, and PRECHARGE Switching--the only exceptions are ACTIVATE and PRECHARGE commands; Example of -25E IDD1 pattern: A0DDDDR0DDDDDDDDDP0 1
Row/column addresses Bank addresses Data I/O
Row addresses switching; Row addresses switching; Address input A10 must be LOW at all times Address input A10 must be LOW at all times Bank address is fixed (bank 0) Switching Bank address is fixed (bank 0) Read data: Output data switches after every clock cycle, which means that read data is stable during falling DQS; I/O should be floating when no read data Off Disabled 8 fixed (via MR0) Bank 0; ACTIVATE-to-READ-to-PRECHARGE loop All other n/a
1
2
Output buffer DQ, DQS ODT Burst length Active banks Idle banks Special notes Notes:
Off Disabled n/a Bank 0; ACTIVATE-to-PRECHARGE loop All other n/a
1. For further definition of input switching, see Table 10 on page 29. 2. For further definition of data switching, see Table 11 on page 29.
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions
Figure 14: IDD1 Example - DDR3-800, 5-5-5, x8 (-25E)
T0 CK BA[2:0] A[9:0] A10 A[12:11] CS# RAS# CAS# WE# Command DQ DM IDD1 measurement loop ACT D D# D# D RD D# D# D D D# 0 D# D D D# 1 PRE D D D# D# 0 3 0 3 0 000 3FF 000 0 3FF 000 3FF T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18
011001
Notes:
1. Data DQ is shown, but the output buffer should be switched off (per MR1[12] = 1) to achieve IOUT = 0mA (MR1[12] = 0 is reflected in this example; however, test conditions are MR1[12] = 1). Address inputs are split into three parts.
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions
Table 14: IDD Measurement Conditions for Power-Down Currents
IDD2Ps IDD2Pf Precharge Precharge Power-Down Power-Down Current Current (Slow Exit)1 (Fast Exit)1 n/a LOW On
t
Name Timing example CKE External clock
t
IDD2Q Precharge Quiet Standby Current n/a HIGH On
t
IDD2N Precharge Standby Current Figure 15 on page 34 HIGH On
t
IDD3P Active Power-Down Current n/a LOW On
t
IDD3N Active Standby Current Figure 15 on page 34 HIGH On
t
Notes
n/a LOW On
t
CK RAS
CK (MIN) IDD n/a n/a n/a n/a n/a n/a n/a Stable Stable Stable Stable Floating Off Disabled n/a None All n/a
CK(MIN) IDD n/a n/a n/a n/a n/a n/a n/a Stable Stable Stable Stable Floating Off Disabled n/a None All n/a
CK(MIN) IDD n/a n/a n/a n/a n/a n/a n/a HIGH Stable Stable Stable Floating Off Disabled n/a None All n/a
CK (MIN) IDD n/a n/a n/a n/a n/a n/a n/a HIGH Switching Switching Switching Switching Off Disabled n/a None All n/a
CK (MIN) IDD n/a n/a n/a n/a n/a n/a n/a Stable Stable Stable Stable Floating Off Disabled n/a All None n/a
CK (MIN) IDD n/a n/a n/a n/a n/a n/a n/a HIGH Switching Switching Switching Switching Off Disabled n/a All None n/a 2 2 2 3
tRC t tRCD tRRD tRC
CL AL CS# Command inputs Row/column addresses Bank addresses Data I/O Output buffer DQ, DQS ODT Burst length Active banks Idle banks Special notes
Notes:
1. MR0[12] defines DLL on/off behavior during precharge power-down only; DLL on (fast exit, MR0[12] = 1) and DLL off (slow exit, MR0[12] = 0). 2. For further definition of input switching, see Table 10 on page 29. 3. For further definition of data switching, see Table 11 on page 29.
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions
Figure 15: IDD2N/IDD3N Example - DDR3-800, 5-5-5, x8 (-25E)
T0 CK BA[2:0] A[12:0] CS# RAS# CAS# WE# Command DQ[7:0] FF D# 00 00 D# FF FF D 00 00 D FF FF D# 00 00 D# FF FF D 00 00 D FF FF D# 00 00 D# FF FF D 00 0 0000 7 1FFF 0 0000 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
DM IDD2N/IDD3N measurement loop
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions
Table 15:
IDD Test Timing diagram example CKE External clock
t
IDD Measurement Conditions for IDD4R, IDD4W
IDD4R: Burst Read Operating Current Figure 16 on page 36 HIGH On
t
IDD4W: Burst Write Operating Current Notes - HIGH On
t
CK RAS RCD RRD RC
CK (MIN) IDD n/a n/a n/a n/a n/a CL IDD 0
CK (MIN) IDD n/a n/a n/a n/a n/a CL IDD 0
tRC t t t t
CL AL CS# Command inputs
HIGH between valid commands Switching; READ command/pattern: R0DDDR1DDDR2DDDR3DDDR4 . . . Rx = READ from bank x Column addresses switching; Address input A10 must always be LOW
HIGH between valid commands Switching; WRITE command/pattern: W0DDDW1DDDW2DDDW3DDDW4 . . . Wx = WRITE to bank x Column addresses switching; Address input A10 must always be LOW 1
Row/column addresses Bank addresses Data I/O
1
Bank address looping (0-to-1-to-2-to-3 . . . ) Bank address looping (0-to-1-to-2-to-3 . . . ) Seamless read data burst (BL8): Output Seamless write data burst (BL8): Input data data switches after every clock cycle, which switches after every clock cycle, which means that read data is stable during means that write data is stable during falling DQS falling DQS Off Disabled 8 fixed (via MR0) All None n/a Notes: Off Disabled 8 fixed (via MR0) All None DM always LOW 2
Output buffer DQ, DQS ODT Burst length Active banks Idle banks Special notes
1. For further definition of input switching, see Table 10 on page 29. 2. For further definition of data switching, see Table 11 on page 29.
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions
Figure 16: IDD4R Example - DDR3-800, 5-5-5, x8
T0 CK BA[2:0] A[9:0] A10 A[12:11] CS# RAS# CAS# WE# CMD[2:0] DQ[7:0] DM Start measurement loop RD D D# D# RD D D# D# RD D D# D# RD D 0 3 0 3 0 000 1 3FF 2 000 3 3FF T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12
00 00 FF FF 00 00 FF FF 00 00 FF FF 00 00 FF FF
Notes:
1. Data DQ is shown, but the output buffer should be switched off (per MR1[12] = 1) to achieve IOUT = 0mA (MR1[12] = 0 is reflected in this example; however, test conditions are MR1[12] = 1). Address inputs are split into three parts.
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions
Table 16: IDD Measurement Conditions for IDD5B, IDD6, IDD6ET
IDD6: Self Refresh Current Normal Temperature Range TC = 0C to 85C LOW Off, CK and CK# = LOW n/a n/a n/a n/a n/a n/a n/a n/a Floating Floating Floating Floating Floating Disabled Disabled n/a n/a n/a SRT disabled IDD6ET: Self Refresh Current Extended Temperature Range TC = 0C to 95C LOW Off, CK and CK# = LOW n/a n/a n/a n/a n/a n/a n/a n/a Floating Floating Floating Floating Floating Disabled Disabled n/a n/a n/a SRT enabled 1 1 1 2
IDD Test CKE External clock
t t t t t
IDD5B: Refresh Current HIGH On
t
Notes
CK RC RAS RCD RRD
CK (MIN) IDD n/a n/a n/a n/a
tRC
tRFC
(MIN) IDD n/a n/a
CL AL CS# Command inputs Row/column addresses Bank addresses Data I/O Output buffer DQ, DQS ODT Burst length Active banks Idle banks Special notes Notes:
HIGH between valid commands Switching Switching Switching Switching Disabled Disabled n/a REFRESH command every tRFC (MIN) None n/a
1. For further definition of input switching, see Table 10 on page 29. 2. For further definition of data switching, see Table 11 on page 29.
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions
Table 17:
IDD Test CKE External clock
t
IDD Measurement Conditions for IDD7
IDD7: All Banks Interleaved Read Current HIGH On
t t t t t
CK
CK (MIN) IDD RC (MIN) IDD RAS (MIN) IDD RCD (MIN) IDD RRD (MIN) IDD
tRC tRAS tRCD tRRD tRC
n/a CL IDD CL - 1 HIGH between valid commands See Table 10 on page 29 for patterns Stable during DESELECTs (DES) Looping (see Table 10 on page 29 for patterns) Read data (BL8): output data switches after every clock cycle, which means that read data is stable during falling DQS; I/O should be floating when no read data is being driven Off Disabled 8 fixed (via MR0) All, rotational n/a
CL AL CS# Command inputs Row/column addresses Bank addresses Data I/O Output buffer DQ, DQS ODT Burst length Active banks Idle banks
Table 18:
Speed Bin DDR3-800 (-25, -25E)
IDD7 Patterns
Width IDD7 Pattern x4, x8 A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D A0 . . . x16 A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D D D A0 . . .
DDR3-1066 (-187, -187E)
x4, x8 A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D D D A0 . . . x16 A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3 RA3 D D D D D D D A4 RA4 D D D D A5 RA5 D D D D A6 RA6 D D D D A7 RA7 D D D D D D D A0 . . .
DDR3-1333 (-15, -15E, -15F)
x4, x8 A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D D D A0 . . . x16 A0 RA0 D D D A1 RA1 D D D A2 RA2 D D D A3 RA3 D D D D D D D D D D D D D A4 RA4 D D D A5 RA5 D D D A6 RA6 D D D A7 RA7 D D D D D D D D D D D D D A0 . . .
DDR3-1600 (-125E, -125F, -125)
x4, x8 A0 RA0 D D D A1 RA1 D D D A2 RA2 D D D A3 RA3 D D D D D D D A4 RA4 D D D A5 RA5 D D D A6 RA6 D D D A7 RA7 D D D D D D D A0 . . . x16 Notes: A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3 RA3 D D D D D D D D D D D D A4 RA4 D D D D A5 RA5 D D D D A6 RA6 D D D D A7 RA7 D D D D D D D D D D D D A0 . . . 1. A0 = ACTIVATE bank 0; RA0 = READ with auto precharge bank 0; D = DESELECT.
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics - IDD Specifications
Electrical Characteristics - IDD Specifications
IDD values are for full operating range of voltage and temperature unless otherwise noted. Table 19: IDD Maximum Limits
Speed Bin IDD IDD0 Width x4 x8 x16 IDD1 x4 x8 x16 IDD2P IDD2Q IDD2N IDD3P IDD3N IDD4R Slow (s) Fast (f) All All All x4, x8 x16 x4 x8 x16 IDD4W x4 x8 x16 IDD5B IDD6 IDD6ET IDD7 All All All x4 x8 x16 Notes: 1. 2. 3. 4. DDR3-800 65 90 90 85 110 110 10 25 40 45 25 50 50 130 130 190 130 130 210 200 6 9 230 350 350 DDR3-1066 75 100 100 95 120 130 10 25 45 50 30 55 55 160 160 230 160 160 265 220 6 9 250 390 380 DDR3-1333 85 110 110 105 130 150 10 25 50 55 35 60 60 200 200 270 190 190 325 240 6 9 315 490 420 DDR3-1600 95 120 120 115 140 170 10 25 55 60 40 65 65 250 250 315 225 225 400 260 6 9 400 600 460 Units mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA Notes 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2, 3 2, 4 1, 2 1, 2 1, 2
TC = 85C; SRT and ASR are disabled. Enabling ASR could increase IDDx by up to an additional 2mA. Restricted to TC (MAX) = 85C. TC = 85C; ASR and ODT are disabled; SRT is enabled.
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC
Electrical Specifications - DC and AC
DC Operating Conditions
Table 20: DC Electrical Characteristics and Operating Conditions
All voltages are referenced to VSS Parameter/Condition Supply voltage I/O supply voltage Input leakage current Any input 0V VIN VDD, VREF pin 0V VIN 1.1V (All other pins not under test = 0V) VREF supply leakage current VREFDQ = VDD/2 or VREFCA = VDD/2 (All other pins not under test = 0V) Notes: Symbol VDD VDDQ II Min 1.425 1.425 -2 Nom 1.5 1.5 - Max 1.575 1.575 2 Units V V A Notes 1, 2 1, 2
IVREF
-1
-
1
A
3, 4
1. VDD and VDDQ must track one another. VDDQ must be less than or equal to VDD. VSS = VSSQ. 2. VDD and VDDQ may include AC noise of 50mV (250 kHz to 20 MHz) in addition to the DC (0Hz to 250 kHz) specifications. VDD and VDDQ must be at same level for valid AC timing parameters. 3. VREF (see Table 21). 4. The minimum limit requirement is for testing purposes. The leakage current on the VREF pin should be minimal.
Input Operating Conditions
Table 21: DC Electrical Characteristics and Input Conditions
All voltages are referenced to VSS Parameter/Condition Input reference voltage command/address bus I/O reference voltage DQ bus Command/address termination voltage (system level, not direct DRAM input) Notes: Symbol VREFCA(DC) VREFDQ(DC) VTT Min 0.49 x VDD 0.49 x VDD - Nom 0.5 x VDD 0.5 x VDD 0.5 x VDDQ Max 0.51 x VDD 0.51 x VDD - Units V V V Notes 1, 2 2, 3 4
1. VREFCA(DC) is expected to be approximately 0.5 x VDD and to track variations in the DC level. Externally generated peak noise (noncommon mode) on VREFCA may not exceed 1 percent x VDD around the VREFCA(DC) value. Peak-to-peak AC noise on VREFCA should not exceed 2 percent of VREFCA(DC). 2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifications if the DRAM induces additional AC noise greater than 20 MHz in frequency. 3. VREFDQ(DC) is expected to be approximately 0.5 x VDD and to track variations in the DC level. Externally generated peak noise (noncommon mode) on VREFDQ may not exceed 1 percent x VDD around the VREFDQ(DC) value. Peak-to-peak AC noise on VREFDQ should not exceed 2 percent of VREFDQ(DC). 4. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors. MIN and MAX values are system-dependent.
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC
Table 22: AC Input Operating Conditions
Symbol DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 Units
Parameter/Condition
Command and Address Input high AC voltage: Logic 1 Input high DC voltage: Logic 1 Input low DC voltage: Logic 0 Input low AC voltage: Logic 0 VIH(AC) MIN VIH(DC) MIN VIL(DC) MAX VIL(AC) MAX DQ and DM Input high AC voltage: Logic 1 Input high DC voltage: Logic 1 Input low DC voltage: Logic 0 Input low AC voltage: Logic 0 Notes: VIH(AC) MIN VIH(DC) MIN VIL(DC) MAX VIL(AC) MAX +175 +100 -100 -175 +150 +100 -100 -150 mV mV mV mV +175 +100 -100 -175 +150 or +175 +100 -100 -150 or -175 mV mV mV mV
1. All voltages are referenced to VREF. VREF is VREFCA for control, command, and address. All slew rates and setup/hold times are specified at the DRAM ball. VREF is VREFDQ for DQ and DM inputs. 2. Input setup timing parameters (tIS and tDS) are referenced at VIL(AC)/VIH(AC), not VREF(DC). 3. Input hold timing parameters (tIH and tDH) are referenced at VIL(DC)/VIH(DC), not VREF(DC). 4. Single-ended input slew rate = 1 V/ns; maximum input voltage swing under test is 900mV (peak-to-peak). 5. For VIH(AC) and VIL(AC) levels of 150mV, special setup and hold derating and different tVAC numbers apply.
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC
Figure 17: Input Signal
VIL and VIH levels with ringback 1.90V VDDQ + 0.4V narrow pulse width
1.50V Minimum VIL and VIH levels
VDDQ
0.925V
VIH(AC)
0.925V
VIH(AC)
0.850V
VIH(DC)
0.850V
VIH(DC)
0.780V 0.765V 0.750V 0.735V 0.720V
0.780V 0.765V 0.750V 0.735V 0.720V
VREF + AC noise VREF + DC error VREF - DC error VREF - AC noise
0.650V
VIL(DC)
0.650V
VIL(DC)
0.575V
VIL(AC)
0.575V
VIL(AC)
0.0V
VSS
-0.40V
VSS - 0.4V narrow pulse width
Notes:
1. Numbers in diagrams reflect nominal values.
AC Overshoot/Undershoot Specification
Table 23:
Parameter Maximum peak amplitude allowed for overshoot area (see Figure 18 on page 43) Maximum peak amplitude allowed for undershoot area (see Figure 19 on page 43) Maximum overshoot area above VDD (see Figure 18 on page 43) Maximum undershoot area below VSS (see Figure 19 on page 43)
Control and Address Pins
DDR3-800 0.4V 0.4V 0.67 Vns 0.67 Vns DDR3-1066 0.4V 0.4V 0.5 Vns 0.5 Vns DDR3-1333 0.4V 0.4V 0.4 Vns 0.4 Vns DDR3-1600 0.4V 0.4V 0.33 Vns 0.33 Vns
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC
Table 24:
Parameter Maximum peak amplitude allowed for overshoot area (see Figure 18 on page 43) Maximum peak amplitude allowed for undershoot area (see Figure 19 on page 43) Maximum overshoot area above VDD/VDDQ (see Figure 18 on page 43) Maximum undershoot area below VSS/VSSQ (see Figure 19 on page 43)
Clock, Data, Strobe, and Mask Pins
DDR3-800 0.4V 0.4V 0.25 Vns 0.25 Vns DDR3-1066 0.4V 0.4V 0.19 Vns 0.19 Vns DDR3-1333 0.4V 0.4V 0.15 Vns 0.15 Vns DDR3-1600 0.4V 0.4V 0.13 Vns 0.13 Vns
Figure 18: Overshoot
Maximum amplitude Volts (V) Overshoot area
VDD/VDDQ Time (ns)
Figure 19: Undershoot
VSS/VSSQ
Volts (V) Undershoot area Maximum amplitude Time (ns)
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC
Table 25: Differential Input Operating Conditions (CK, CK# and DQS, DQS#)
All voltages are referenced to VSS Parameter/Condition Differential input voltage Differential input midpoint voltage Differential input voltage logic high Differential input voltage logic low Differential input crossing voltage relative to VDD/2 for CK, CK# Differential input crossing voltage relative to VDD/2 for DQS, DQS# Notes: Symbol VIN VMP(DC) VIHDIFF VILDIFF VIX Min -400 650 200 VSSQ - 400 VREF(DC) - 150 VREF(DC) - 175 VREF(DC) - 150 Max VDD + 400 850 VDD + 400 -200 VREF(DC) + 150 VREF(DC) + 175 VREF(DC) + 150 Units mV mV mV mV mV mV mV
1. VMP(DC) specifies the input differential common mode voltage (VTR + VCP)/2 where VTR is the true input (CK, DQS) level and VCP is the complementary input (CK#, DQS#) level. VMP(DC) is expected to be about 0.5 x VDDQ. 2. The typical value of VIX(AC) is expected to be about 0.5 x VDD of the transmitting device, and VIX(AC) is expected to track variations in VDD. VIX(AC) indicates the voltage at which differential input signals must cross. 3. Reference is VREFCA(DC) for clock and for VREFDQ(DC) for strobe. 4. Clock is referenced to VDD and VSS. Data strobe is referenced to VDDQ and VSSQ. 5. Differential input slew rate = 2 V/ns. 6. The VIX extended range (175mV) is allowed only for the clock. Additionally, the VIX extended range is only allowed when the following conditions are met: The single-ended input signals are monotonic, have the single-ended swing VSEL, VSEH of at least VDD/2 250mV, and the differential slew rate of CK, CK# is greater than 3 V/ns.
Figure 20: Single-Ended Requirements for Differential Signals
VDD or VDDQ
VSEH (MIN)
VDD/2 or VDDQ/2 VSEH VSEL (MAX) VSEL VSS or VSSQ CK or DQS
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC
Figure 21: Definition of Differential AC-Swing and tDVAC
tDVAC VIHDIFF(AC) MIN
VIHDIFF (MIN) VIHDIFF(DC) MIN CK - CK# DQS - DQS# 0.0
VILDIFF(DC) MAX VILDIFF (MAX)
VILDIFF(AC) MAX half cycle tDVAC
Table 26:
Allowed Time Before Ringback (tDVAC) for CK - CK# and DQS - DQS#
Below VIL(AC)
tDVAC
(ps) at |VIHDIFF(AC)/VILDIFF(AC)| 300mV 175 170 167 163 162 161 159 155 150 150
Slew Rate (V/ns) >4.0 4.0 3.0 2.0 1.9 1.6 1.4 1.2 1.0 <1.0
350mV 75 57 50 38 34 29 22 13 0 0
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC Slew Rate Definitions for Single-Ended Input Signals
Setup (tIS and tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF and the first crossing of VIH(AC) MIN. Setup (tIS and tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF and the first crossing of VIL(AC) MAX (see Figure 22 on page 47). Hold (tIH and tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC) MAX and the first crossing of VREF. Hold (tIH and tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC) MIN and the first crossing of VREF (see Figure 22 on page 47). Table 27: Single-Ended Input Slew Rate Definition
Input Slew Rates (Linear Signals) Input Setup Edge Rising From VREF Measured To VIH(AC) MIN Calculation
VIH(AC) MIN - VREF TRS
Falling
VREF
VIL(AC) MAX
VREF - VIL(AC) MAX TFS
Hold
Rising
VIL(DC) MAX
VREF
VREF - VIL(DC) MAX TFH
Falling
VIH(DC) MIN
VREF
VIH(DC) MIN - VREF TRSH
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC
Figure 22: Nominal Slew Rate Definition for Single-Ended Input Signals
TRS
Setup
Single-ended input voltage (DQ, CMD, ADDR)
VIH(AC) MIN VIH(DC) MIN
VREFDQ or VREFCA
VIL(DC) MAX VIL(AC) MAX
TFS
TRH
Hold
Single-ended input voltage (DQ, CMD, ADDR)
VIH(AC) MIN VIH(DC) MIN
VREFDQ or VREFCA
VIL(DC) MAX VIL(AC) MAX
TFH
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1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC Slew Rate Definitions for Differential Input Signals
Input slew rate for differential signals (CK, CK# and DQS, DQS#) are defined and measured, as shown in Table 28 and Figure 23. The nominal slew rate for a rising signal is defined as the slew rate between VIL(DIFF ) MAX and VIH(DIFF ) MIN. The nominal slew rate for a falling signal is defined as the slew rate between VIH(DIFF ) MIN and VIL(DIFF ) MAX. Table 28: Differential Input Slew Rate Definition
Differential Input Slew Rates (Linear Signals) Input CK and DQS reference Edge Rising From VIL(DIFF) MAX
Measured To VIH(DIFF) MIN Calculation
VIH(DIFF) MIN - VIL(DIFF) MAX TR(DIFF)
Falling
VIH(DIFF) MIN
VIL(DIFF) MAX
VIH(DIFF) MIN - VIL(DIFF) MAX TF(DIFF)
Figure 23: Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK#
TRDIFF
Differential input voltage (DQS, DQS#; CK, CK#)
VIH(DIFF) MIN
0
VIL(DIFF) MAX
TFDIFF
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1Gb: x4, x8, x16 DDR3 SDRAM ODT Characteristics
ODT Characteristics
ODT effective resistance RTT is defined by MR1[9, 6, and 2]. ODT is applied to the DQ, DM, DQS, DQS#, and TDQS, TDQS# balls (x8 devices only). The ODT target values are listed in Table 29 and Table 30 on page 50. A functional representation of the ODT is shown in Figure 24. The individual pull-up and pull-down resistors (RTTPU and RTTPD) are defined as follows: * RTTPU = (VDDQ - VOUT)/|IOUT|, under the condition that RTTPD is turned off * RTTPD = (VOUT)/|IOUT|, under the condition that RTTPU is turned off Figure 24: ODT Levels and I-V Characteristics
Chip in termination mode ODT VDDQ IPU IOUT = IPD - IPU To other circuitry such as RCV, . . . RTTPU DQ IOUT RTTPD IPD VSSQ VOUT
Table 29:
On-Die Termination DC Electrical Characteristics
Symbol RTT_EFF VM -5 Min Nom Max +5 Units % Notes 1, 2 1, 2, 3
Parameter/Condition RTT effective impedance Deviation of VM with respect to VDDQ/2 Notes:
See Table 30 on page 50
1. Tolerance limits are applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD, VSSQ = VSS). Refer to "ODT Sensitivity" on page 50 if either the temperature or voltage changes after calibration. 2. Measurement definition for RTT: Apply VIH(AC) to pin under test and measure current I[VIH(AC)], then apply VIL(AC) to pin under test and measure current I[VIL(AC)]:
VIH ( AC ) - VIL ( AC ) RTT = ------------------------------------------------------------|I ( VIH ( AC ) ) - I ( VIL ( AC ) )|
3. Measure voltage (VM) at the tested pin with no load:
2 x VM VM = ----------------- - 1 x 100 VDDQ
ODT Resistors
Table 30 on page 50 provides an overview of the ODT DC electrical characteristics. The values provided are not specification requirements; however, they can be used as design guidelines to indicate what RTT is targeted to provide: * RTT 120 is made up of RTT120PD240 and RTT120PU240 * RTT 60 is made up of RTT60PD120 and RTT60PU120 * RTT 40 is made up of RTT40PD80 and RTT40PU80 * RTT 30 is made up of RTT30PD60 and RTT30PU60 * RTT 20 is made up of RTT20PD40 and RTT20PU40
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1Gb: x4, x8, x16 DDR3 SDRAM ODT Characteristics
Table 30:
MR1 [9, 6, 2] 0, 1, 0
RTT Effective Impedances
RTT 120 Resistor RTT120PD240 VOUT 0.2 x VDDQ 0.5 x VDDQ 0.8 x VDDQ RTT120PU240 0.2 x VDDQ 0.5 x VDDQ 0.8 x VDDQ 120 VIL(AC) to VIH(AC) 0.2 x VDDQ 0.5 x VDDQ 0.8 x VDDQ RTT60PU120 0.2 x VDDQ 0.5 x VDDQ 0.8 x VDDQ 60 VIL(AC) to VIH(AC) RTT40PD80 0.2 x VDDQ 0.5 x VDDQ 0.8 x VDDQ RTT40PU80 0.2 x VDDQ 0.5 x VDDQ 0.8 x VDDQ 40 VIL(AC) to VIH(AC) RTT30PD60 0.2 x VDDQ 0.5 x VDDQ 0.8 x VDDQ RTT30PU60 0.2 x VDDQ 0.5 x VDDQ 0.8 x VDDQ 30 VIL(AC) to VIH(AC) RTT20PD40 0.2 x VDDQ 0.5 x VDDQ 0.8 x VDDQ RTT20PU40 0.2 x VDDQ 0.5 x VDDQ 0.8 x VDDQ 20 Notes: VIL(AC) to VIH(AC) Min 0.6 0.9 0.9 0.9 0.9 0.6 0.9 0.6 0.9 0.9 0.9 0.9 0.6 0.9 0.6 0.9 0.9 0.9 0.9 0.6 0.9 0.6 0.9 0.9 0.9 0.9 0.6 0.9 0.6 0.9 0.9 0.9 0.9 0.6 0.9 Nom 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Max 1.1 1.1 1.4 1.4 1.1 1.1 1.6 1.1 1.1 1.4 1.4 1.1 1.1 1.6 1.1 1.1 1.4 1.4 1.1 1.1 1.6 1.1 1.1 1.4 1.4 1.1 1.1 1.6 1.1 1.1 1.4 1.4 1.1 1.1 1.6 Units RZQ/1 RZQ/1 RZQ/1 RZQ/1 RZQ/1 RZQ/1 RZQ/2 RZQ/2 RZQ/2 RZQ/2 RZQ/2 RZQ/2 RZQ/2 RZQ/4 RZQ/3 RZQ/3 RZQ/3 RZQ/3 RZQ/3 RZQ/3 RZQ/6 RZQ/4 RZQ/4 RZQ/4 RZQ/4 RZQ/4 RZQ/4 RZQ/8 RZQ/6 RZQ/6 RZQ/6 RZQ/6 RZQ/6 RZQ/6 RZQ/12
0, 0, 1
60
RTT60PD120
0, 1, 1
40
1, 0, 1
30
1, 0, 0
20
1. Values assume an RZQ of 240 (1 percent).
ODT Sensitivity
If either the temperature or voltage changes after I/O calibration, the tolerance limits listed in Table 29 on page 49 and Table 30 can be expected to widen according to Tables 31 and 32 on page 51.
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1Gb: x4, x8, x16 DDR3 SDRAM ODT Characteristics
Table 31:
Symbol RTT
ODT Sensitivity Definition
Min 0.9 - dRTTdT x |DT| - dRTTdV x |DV| Notes: Max 1.6 + dRTTdT x |DT| + dRTTdV x |DV| Units RZQ/(2, 4, 6, 8, 12)
1. T = T - T(@ calibration), V = VDDQ - VDDQ(@ calibration) and VDD = VDDQ.
Table 32:
ODT Temperature and Voltage Sensitivity
Change dRTTdT dRTTdV Notes: Min 0 0 Max 1.5 0.15 Units %/C %/mV
1. T = T - T(@ calibration), V = VDDQ - VDDQ(@ calibration) and VDD = VDDQ.
ODT Timing Definitions
ODT loading differs from that used in AC timing measurements. The reference load for ODT timings is shown in Figure 25. Two parameters define when ODT turns on or off synchronously, two define when ODT turns on or off asynchronously, and another defines when ODT turns on or off dynamically. Table 33 outlines and provides definition and measurement reference settings for each parameter (see Figure 34 on page 52). ODT turn-on time begins when the output leaves High-Z and ODT resistance begins to turn on. ODT turn-off time begins when the output leaves Low-Z and ODT resistance begins to turn off. Figure 25: ODT Timing Reference Load
VREF VDDQ/2 RTT = 25 VTT = VSSQ Timing reference point RZQ = 240 VSSQ
DUT CK, CK#
DQ, DM DQS, DQS# TDQS, TDQS# ZQ
Table 33:
Symbol
t
ODT Timing Definitions
Begin Point Definition Rising edge of CK - CK# defined by the end point of ODTL on Rising edge of CK - CK# defined by the end point of ODTL off Rising edge of CK - CK# with ODT first being registered HIGH Rising edge of CK - CK# with ODT first being registered LOW Rising edge of CK - CK# defined by the end point of ODTLCNW, ODTLCWN4, or ODTLCWN8 End Point Definition Extrapolated point at VSSQ Extrapolated point at VRTT_NOM Extrapolated point at VSSQ Extrapolated point at VRTT_NOM Extrapolated points at VRTT_WR and VRTT_NOM Figure Figure 26 on page 52 Figure 26 on page 52 Figure 27 on page 53 Figure 27 on page 53 Figure 28 on page 53
AON
tAOF tAONPD t
AOFPD
tADC
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1Gb: x4, x8, x16 DDR3 SDRAM ODT Characteristics
Table 34: Reference Settings for ODT Timing Measurements
RTT_NOM Setting RZQ/4 (60) RZQ/12 (20)
t
Measured Parameter
t
RTT_WR Setting n/a n/a n/a n/a n/a n/a n/a n/a RZQ/2 (120)
VSW1 50mV 100mV 50mV 100mV 50mV 100mV 50mV 100mV 200mV
VSW2 100mV 200mV 100mV 200mV 100mV 200mV 100mV 200mV 300mV
AON AOF
RZQ/4 (60) RZQ/12 (20) RZQ/4 (60) RZQ/12 (20) RZQ/4 (60) RZQ/12 (20) RZQ/12 (20) Notes:
t
AONPD AOFPD
t
t
ADC
1. Assume an RZQ of 240 (1 percent) and that proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD, VSSQ = VSS).
Figure 26: tAON and tAOF Definitions
tAON Begin point: Rising edge of CK - CK# defined by the end point of ODTL on CK CK VDDQ/2 CK# tAON CK# tAOF End point: Extrapolated point at VRTT_NOM TSW2 TSW1 DQ, DM DQS, DQS# TDQS, TDQS# VSSQ VSW1 End point: Extrapolated point at VSSQ TSW1 TSW1 VSW2 VSW2 VSW1 VSSQ VRTT_NOM tAOF Begin point: Rising edge of CK - CK# defined by the end point of ODTL off
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1Gb: x4, x8, x16 DDR3 SDRAM ODT Characteristics
Figure 27: tAONPD and tAOFPD Definition
tAONPD Begin point: Rising edge of CK - CK# with ODT first registered HIGH CK CK VDDQ/2 CK# tAONPD CK# tAOFPD End point: Extrapolated point at VRTT_NOM TSW2 TSW2 TSW1 DQ, DM DQS, DQS# TDQS, TDQS# VSSQ VSW1 TSW1 VSW2 VSW2 VSW1 VSSQ End point: Extrapolated point at VSSQ VRTT_NOM tAOFPD Begin point: Rising edge of CK - CK# with ODT first registered LOW
Figure 28: tADC Definition
Begin point: Rising edge of CK - CK# defined by the end point of ODTLCNW CK VDDQ/2 CK# tADC tADC Begin point: Rising edge of CK - CK# defined by the end point of ODTLCWN4 or ODTLCWN8
VRTT_NOM DQ, DM DQS, DQS# TDQS, TDQS# End point: Extrapolated point at VRTT_NOM
TSW21 TSW11 VSW1 VRTT_WR VSW2 TSW22 TSW12
VRTT_NOM
End point: Extrapolated point at VRTT_WR VSSQ
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1Gb: x4, x8, x16 DDR3 SDRAM Output Driver Impedance
Output Driver Impedance
The output driver impedance is selected by MR1[5,1] during initialization. The selected value is able to maintain the tight tolerances specified if proper ZQ calibration is performed. Output specifications refer to the default output driver unless specifically stated otherwise. A functional representation of the output buffer is shown in Figure 29 on page 54. The output driver impedance RON is defined by the value of the external reference resistor RZQ as follows: * RONx = RZQ/y (with RZQ = 240 1 percent; x = 34 or 40 with y = 7 or 6, respectively) The individual pull-up and pull-down resistors (RONPU and RONPD) are defined as follows: * RONPU = (VDDQ - VOUT)/|IOUT|, when RONPD is turned off * RONPD = (VOUT)/|IOUT|, when RONPU is turned off Figure 29: Output Driver
Chip in drive mode Output driver
VDDQ IPU To other circuitry such as RCV, . . . RONPU DQ IOUT RONPD IPD VOUT VSSQ
34 Output Driver Impedance
The 34 driver (MR1[5, 1] = 01) is the default driver. Unless otherwise stated, all timings and specifications listed herein apply to the 34 driver only. Its impedance RON is defined by the value of the external reference resistor RZQ as follows: RON34 = RZQ/7 (with nominal RZQ = 240 1 percent) and is actually 34.3 1 percent. The 34 output driver impedance characteristics are listed in Table 35 on page 55.
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1Gb: x4, x8, x16 DDR3 SDRAM Output Driver Impedance
Table 35:
MR1[5,1] 0,1
34 Driver Impedance Characteristics
RON 34.3 Resistor Ron34PD VOUT 0.2/VDDQ 0.5/VDDQ 0.8/VDDQ RON34PU 0.2/VDDQ 0.5/VDDQ 0.8/VDDQ Min 0.6 0.9 0.9 0.9 0.9 0.6 -10% Nom 1.0 1.0 1.0 1.0 1.0 1.0 n/a Max 1.1 1.1 1.4 1.4 1.1 1.1 10 Units RZQ/7 RZQ/7 RZQ/7 RZQ/7 RZQ/7 RZQ/7 % Notes 1 1 1 1 1 1 1, 2
Pull-up/pull-down mismatch (MMPUPD) Notes:
0.5/VDDQ
1. Tolerance limits assume RZQ of 240 (1 percent) and are applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD, VSSQ = VSS). Refer to "34 Driver Output Sensitivity" on page 56 if either the temperature or the voltage changes after calibration. 2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Measure both RONPU and RONPD at 0.5 x VDDQ:
RON PU - RON PD MM PUPD = ------------------------------------X100 RON NOM 34 Driver
The 34 driver's current range has been calculated and summarized in Table 37 on page 56 for VDD = 1.5V, Table 38 on page 56 for VDD = 1.575V, and Table 39 on page 56 for VDD = 1.425V. The individual pull-up and pull-down resistors (RON34PD and RON34PU) are defined as follows: * RON34PD = (VOUT)/|IOUT|; RON34PU is turned off * RON34PU = (VDDQ - VOUT)/|IOUT|; RON34PD is turned off Table 36: 34 Driver Pull-Up and Pull-Down Impedance Calculations
RON RZQ = 240 1 percent RZQ/7 = (240 1 percent)/7 MR1[5,1] 0, 1 RON 34.3 Resistor RON34PD VOUT 0.2 x VDDQ 0.5 x VDDQ 0.8 x VDDQ RON34PU 0.2 x VDDQ 0.5 x VDDQ 0.8 x VDDQ Min 237.6 33.9 Min 20.4 30.5 30.5 30.5 30.5 20.4 Nom 240 34.3 Nom 34.3 34.3 34.3 34.3 34.3 34.3 Max 242.4 34.6 Max 38.1 38.1 48.5 48.5 38.1 38.1 Units Units
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1Gb: x4, x8, x16 DDR3 SDRAM Output Driver Impedance
Table 37:
MR1[5,1] 0, 1
34 Driver IOH/IOL Characteristics: VDD = VDDQ = 1.5V
RON 34.3 Resistor RON34PD VOUT IOL @ 0.2 x VDDQ IOL @ 0.5 x VDDQ IOL @ 0.8 x VDDQ RON34PU IOH @ 0.2 x VDDQ IOH @ 0.5 x VDDQ IOH @ 0.8 x VDDQ Max 14.7 24.6 39.3 39.3 24.6 14.7 Nom 8.8 21.9 35.0 35.0 21.9 8.8 Min 7.9 19.7 24.8 24.8 19.7 7.9 Units mA mA mA mA mA mA
Table 38:
MR1[5,1] 0, 1
34 Driver IOH/IOL Characteristics: VDD = VDDQ = 1.575V
RON 34.3 Resistor RON34PD VOUT IOL @ 0.2 x VDDQ IOL @ 0.5 x VDDQ IOL @ 0.8 x VDDQ RON34PU IOH @ 0.2 x VDDQ IOH @ 0.5 x VDDQ IOH @ 0.8 x VDDQ Max 15.5 25.8 41.2 41.2 25.8 15.5 Nom 9.2 23 36.8 36.8 23 9.2 Min 8.3 20.7 26 26 20.7 8.3 Units mA mA mA mA mA mA
Table 39:
MR1[5,1] 0, 1
34 Driver IOH/IOL Characteristics: VDD = VDDQ = 1.425V
RON 34.3 Resistor RON34PD VOUT IOL @ 0.2 x VDDQ IOL @ 0.5 x VDDQ IOL @ 0.8 x VDDQ RON34PU IOH @ 0.2 x VDDQ IOH @ 0.5 x VDDQ IOH @ 0.8 x VDDQ Max 14.0 23.3 37.3 37.3 23.3 14.0 Nom 8.3 20.8 33.3 33.3 20.8 8.3 Min 7.5 18.7 23.5 23.5 18.7 7.5 Units mA mA mA mA mA mA
34 Driver Output Sensitivity
If either the temperature or the voltage changes after ZQ calibration, the tolerance limits listed in Table 35 on page 55 can be expected to widen according to Table 40 and Table 41 on page 57. Table 40: 34 Output Driver Sensitivity Definition
Min 0.9 - dRONdTH x |T| - dRONdVH x |V| 0.9 - dRONdTM x |T| - dRONdVM x |V| 0.9 - dRONdTL x |T| - dRONdVL x |V| Max 1.1 + dRONdTH x |T| + dRONdVH x |V| 1.1 + dRONdTM x |T| + dRONdVM x |V| 1.1 + dRONdTL x |T| + dRONdVL x |V| Units RZQ/7 RZQ/7 RZQ/7
Symbol RON @ 0.8 x VDDQ RON @ 0.5 x VDDQ RON @ 0.2 x VDDQ Notes:
1. T = T - T(@ calibration), V = VDDQ - VDDQ(@ calibration), and VDD = VDDQ.
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1Gb: x4, x8, x16 DDR3 SDRAM Output Driver Impedance
Table 41: 34 Output Driver Voltage and Temperature Sensitivity
Change dRONdTM dRONdVM dRONdTL dRONdVL dRONdTH dRONdVH Min 0 0 0 0 0 0 Max 1.5 0.13 1.5 0.13 1.5 0.13 Units %/C %/mV %/C %/mV %/C %/mV
Alternative 40 Driver
Table 42:
MR1[5,1] 0,0
40 Driver Impedance Characteristics
RON 40 Resistor RON40PD VOUT 0.2 x VDDQ 0.5 x VDDQ 0.8 x VDDQ RON40PU 0.2 x VDDQ 0.5 x VDDQ 0.8 x VDDQ Min 0.6 0.9 0.9 0.9 0.9 0.6 -10% Nom 1.0 1.0 1.0 1.0 1.0 1.0 n/a Max 1.1 1.1 1.4 1.4 1.1 1.1 10 Units RZQ/6 RZQ/6 RZQ/6 RZQ/6 RZQ/6 RZQ/6 % Notes 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2
Pull-up/pull-down mismatch (MMPUPD) Notes:
0.5 x VDDQ
1. Tolerance limits assume RZQ of 240 (1 percent) and are applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD, VSSQ = VSS). Refer to "40 Driver Output Sensitivity" on page 57 if either the temperature or the voltage changes after calibration. 2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Measure both RONPU and RONPD at 0.5 x VDDQ:
RON P U - RON P D MM P UP D = ------------------------------------ x100 RON Nom 40 Driver Output Sensitivity
If either the temperature or the voltage changes after I/O calibration, the tolerance limits listed in Table 42 can be expected to widen according to Table 43 and Table 44 on page 58. Table 43: 40 Output Driver Sensitivity Definition
Min 0.9 - dRONdTH x |T| - dRONdVH x |V| 0.9 - dRONdTM x |T| - dRONdVM x |V| 0.9 - dRONdTL x |T| - dRONdVL x |V| Max 1.1 + dRONdTH x |T| + dRONdVH x |V| 1.1 + dRONdTM x |T| + dRONdVM x |V| 1.1 + dRONdTL x |T| + dRONdVL x |V| Units RZQ/6 RZQ/6 RZQ/6
Symbol RON @ 0.8 x VDDQ RON @ 0.5 x VDDQ RON @ 0.2 x VDDQ Notes:
1. T = T - T(@ calibration), V = VDDQ - VDDQ(@ calibration), and VDD = VDDQ.
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1Gb: x4, x8, x16 DDR3 SDRAM Output Characteristics and Operating Conditions
Table 44:
40 Output Driver Voltage and Temperature Sensitivity
Change dRONdTM dRONdVM dRONdTL dRONdVL dRONdTH dRONdVH Min 0 0 0 0 0 0 Max 1.5 0.15 1.5 0.15 1.5 0.15 Unit %/C %/mV %/C %/mV %/C %/mV
Output Characteristics and Operating Conditions
The DRAM uses both single-ended and differential output drivers. The single-ended output driver is summarized in Table 45 while the differential output driver is summarized in Table 46 on page 59. Table 45: Single-Ended Output Driver Characteristics
All voltages are referenced to Vss Parameter/Condition Output leakage current: DQ are disabled; 0V VOUT VDDQ; ODT is disabled; ODT is HIGH Output slew rate: Single-ended; For rising and falling edges, measure between VOL(AC) = VREF - 0.1 x VDDQ and VOH(AC) = VREF + 0.1 x VDDQ Single-ended DC high-level output voltage Single-ended DC mid-point level output voltage Single-ended DC low-level output voltage Single-ended AC high-level output voltage Single-ended AC low-level output voltage Delta RON between pull-up and pull-down for DQ/DQS Test load for AC timing and output slew rates Notes: Symbol IOZ SRQSE Min -5 2.5 Max +5 5 Units A V/ns Notes 1 1, 2, 3
VOH(DC) VOM(DC) VOL(DC) VOH(AC) VOL(AC) MMPUPD
0.8 x VDDQ 0.5 x VDDQ 0.2 x VDDQ VTT + 0.1 x VDDQ VTT - 0.1 x VDDQ -10 +10
V V V V V %
1, 2, 4 1, 2, 4 1, 2, 4 1, 2, 3, 5 1, 2, 3, 5 1, 6 3
Output to VTT (VDDQ/2) via 25 resistor
1. RZQ of 240 (1 percent) with RZQ/7 enabled (default 34 driver) and is applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD, VSSQ = VSS). 2. VTT = VDDQ/2. 3. See Figure 32 on page 60 for the test load configuration. 4. See Table 35 on page 55 for IV curve linearity. Do not use AC test load. 5. See Table 47 on page 61 for output slew rate. 6. See Table 35 on page 55 for additional information. 7. See Figure 30 on page 59 for an example of a single-ended output signal.
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1Gb: x4, x8, x16 DDR3 SDRAM Output Characteristics and Operating Conditions
Table 46: Differential Output Driver Characteristics
All voltages are referenced to Vss Parameter/Condition Output leakage current: DQ are disabled; 0V VOUT VDDQ; ODT is disabled; ODT is HIGH Output slew rate: Differential; For rising and falling edges, measure between VOLDIFF(AC) = -0.2 x VDDQ and VOHDIFF(AC) = +0.2 x VDDQ Output differential cross-point voltage Differential high-level output voltage Differential low-level output voltage Delta RON between pull-up and pull-down for DQ/DQS Test load for AC timing and output slew rates Notes: Symbol IOZ SRQDIFF Min -5 5 Max +5 10 Units A V/ns Notes 1 1
VOX(AC) VOHDIFF(AC) VOLDIFF(AC) MMPUPD
VREF - 100
VREF + 100
mV V V
1, 2, 3 1, 4 1, 4 1, 5 3
+0.2 x VDDQ -0.2 x VDDQ -10 +10
%
Output to VTT (VDDQ/2) via 25 resistor
1. RZQ of 240 (1 percent) with RZQ/7 enabled (default 34 driver) and is applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD, VSSQ = VSS). 2. VREF = VDDQ/2. 3. See Figure 32 on page 60 for the test load configuration. 4. See Table 48 on page 62 for the output slew rate. 5. See Table 35 on page 55 for additional information. 6. See Figure 31 on page 60 for an example of a differential output signal.
Figure 30: DQ Output Signal
MAX output
VOH(AC)
VOL(AC)
MIN output
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1Gb: x4, x8, x16 DDR3 SDRAM Output Characteristics and Operating Conditions
Figure 31: Differential Output Signal
MAX output
VOH(DIFF)
X
X
VOX(AC) MAX
X X VOX(AC) MIN
VOL(DIFF)
MIN output
Reference Output Load
Figure 32 on page 60 represents the effective reference load of 25 used in defining the relevant device AC timing parameters (except ODT reference timing) as well as the output slew rate measurements. It is not intended to be a precise representation of a particular system environment or a depiction of the actual load presented by a production tester. System designers should use IBIS or other simulation tools to correlate the timing reference load to a system environment. Figure 32: Reference Output Load for AC Timing and Output Slew Rate
DUT
VREF
VDDQ/2 RTT = 25
DQ DQS DQS# ZQ
VTT = VDDQ/2
Timing reference point RZQ = 240 VSS
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1Gb: x4, x8, x16 DDR3 SDRAM Output Characteristics and Operating Conditions Slew Rate Definitions for Single-Ended Output Signals
The single-ended output driver is summarized in Table 45 on page 58. With the reference load for timing measurements, the output slew rate for falling and rising edges is defined and measured between VOL(AC) and VOH(AC) for single-ended signals, as shown in Table 47 and Figure 33. Table 47: Single-Ended Output Slew Rate Definition
Single-Ended Output Slew Rates (Linear Signals) Output DQ Edge Rising
Measured From VOL(AC) To VOH(AC) Calculation
VOH(AC) - VOL(AC) TRSE
Falling
VOH(AC)
VOL(AC)
VOH(AC) - VOL(AC) TFSE
Figure 33: Nominal Slew Rate Definition for Single-Ended Output Signals
TRSE
VOH(AC)
VTT
VOL(AC)
TFSE
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1Gb: x4, x8, x16 DDR3 SDRAM Output Characteristics and Operating Conditions Slew Rate Definitions for Differential Output Signals
The differential output driver is summarized in Table 46 on page 59. With the reference load for timing measurements, the output slew rate for falling and rising edges is defined and measured between VOL(AC) and VOH(AC) for differential signals, as shown in Table 48 and Figure 34. Table 48: Differential Output Slew Rate Definition
Differential Output Slew Rates (Linear Signals) Output DQS, DQS# Edge Rising From VOLDIFF(AC)
Measured To VOHDIFF(AC) Calculation
VOHDIFF(AC) - VOLDIFF(AC) TRDIFF
Falling
VOHDIFF(AC)
VOLDIFF(AC)
VOHDIFF(AC) - VOLDIFF(AC) TFDIFF
Figure 34: Nominal Differential Output Slew Rate Definition for DQS, DQS#
TRDIFF
VOH(DIFF)AC
0
VOL(DIFF)AC
TFDIFF
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Speed Bin Tables
Table 49: DDR3-800 Speed Bins
-25E 5-5-5 Symbol
t
DDR3-800 Speed Bin CL-tRCD-tRP Parameter ACTIVATE to internal READ or WRITE delay time PRECHARGE command period ACTIVATE-to-ACTIVATE or REFRESH command period ACTIVATE-to-PRECHARGE command period CL = 5 CL = 6 Supported CL settings Supported CWL settings Notes: CWL = 5 CWL = 5
t
-25 6-6-6 Max - - - Min 15 15 52.5 37.5 2.5 6 5 Max - - - 9 x tREFI 3.3 Units ns ns ns ns ns ns CK CK 1 2, 3 2 Notes
Min 12.5 12.5 50 37.5 2.5 2.5 5, 6 5
RCD
t t
RP
RC
tRAS
9 x tREFI 3.3 3.3
CK (AVG) (AVG)
Reserved
tCK
1. tREFI depends on TOPER. 2. The CL and CWL settings result in tCK requirements. When making a selection of tCK, both CL and CWL requirement settings need to be fulfilled. 3. Reserved settings are not allowed.
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Table 50: DDR3-1066 Speed Bins
-187E 7-7-7 Symbol
t
DDR3-1066 Speed Bin CL-tRCD-tRP Parameter ACTIVATE to internal READ or WRITE delay time PRECHARGE command period ACTIVATE-to-ACTIVATE or REFRESH command period ACTIVATE-to-PRECHARGE command period CL = 5 CWL = 5 CWL = 6 CL = 6 CWL = 5 CWL = 6 CL = 7 CWL = 5 CWL = 6 CL = 8 CWL = 5 CWL = 6 Supported CL settings Supported CWL settings Notes: Min
-187 8-8-8 Max - - - Min 15 15 52.5 37.5 Max - - - 9 x tREFI Units ns ns ns ns ns ns ns ns ns ns ns ns CK CK 1 2, 3 3 2 2, 3 3 2, 3 3 2 Notes
RCD
t
13.125 13.125 50.625 37.5
RP
t
RC
t
RAS (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG)
9 x tREFI
tCK tCK tCK tCK tCK tCK tCK tCK
Reserved Reserved 2.5 3.3
Reserved Reserved 2.5 3.3
Reserved Reserved 1.875 <2.5
Reserved Reserved Reserved Reserved 1.875 6, 8 5, 6 <2.5
Reserved 1.875 6, 7, 8 5, 6 <2.5
1. tREFI depends on TOPER. 2. The CL and CWL settings result in tCK requirements. When making a selection of tCK, both CL and CWL requirement settings need to be fulfilled. 3. Reserved settings are not allowed.
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Table 51: DDR3-1333 Speed Bins
-15F 8-8-8 Symbol
t
DDR3-1333 Speed Bin CL-tRCD-tRP Parameter ACTIVATE to internal READ or WRITE delay time PRECHARGE command period ACTIVATE-to-ACTIVATE or REFRESH command period ACTIVATE-to-PRECHARGE command period CL = 5 CWL = 5 CWL = 6, 7 CL = 6 CWL = 5 CWL = 6 CWL = 7 CL = 7 CWL = 5 CWL = 6 CWL = 7 CL = 8 CWL = 5 CWL = 6 CWL = 7 CL = 9 CWL = 5, 6 CWL = 7 CL = 10 Supported CL settings Supported CWL settings Notes: CWL = 5, 6 CWL = 7 Min 12 12 48 36 2.5
-15E 9-9-9 Min 13.5 13.5 49.5 36 Max - - - 9 x tREFI
-15 10-10-10 Min 15 15 51 36 Max - - - 9 x tREFI Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns CK CK 1 2, 3 3 2 2, 3 3 3 2, 3 2, 3 3 2 2, 3 3 2, 3 3 2 Notes
Max - - - 9 x tREFI 3.3
RCD
t
RP
tRC
tRAS
tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK
(AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG)
Reserved Reserved 2.5 3.3
Reserved Reserved 2.5 3.3
Reserved 2.5 3.3
Reserved Reserved Reserved 1.875 <2.5
Reserved Reserved Reserved 1.875 <2.5
Reserved Reserved Reserved Reserved Reserved Reserved 1.875 <2.5
Reserved Reserved 1.875 1.5 <2.5 <1.875
Reserved Reserved 1.875 <2.5
Reserved Reserved 1.5 <1.875
Reserved Reserved Reserved Reserved 1.5 <1.875 5, 6, 7 6, 8, 10
Reserved 1.5 <1.875
Reserved 1.5 <1.875 5, 6, 7 5, 6, 7, 8, 9, 10
Reserved 1.5 <1.875 5, 6, 7 6, 7, 8, 9, 10
1. tREFI depends on TOPER. 2. The CL and CWL settings result in tCK requirements. When making a selection of tCK, both CL and CWL requirement settings need to be fulfilled. 3. Reserved settings are not allowed.
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Table 52: DDR3-1600 Speed Bins
-125F 9-9-9 Symbol
t
DDR3-1600 Speed Bin CL-tRCD-tRP Parameter ACTIVATE to internal READ or WRITE delay time PRECHARGE command period ACTIVATE-to-ACTIVATE or REFRESH command period ACTIVATE-to-PRECHARGE command period CL = 5 CWL = 5 CWL = 6, 7, 8 CL = 6 CWL = 5 CWL = 6 CWL = 7, 8 CL = 7 CWL = 5 CWL = 6 CWL = 7 CWL = 8 CL = 8 CWL = 5 CWL = 6 CWL = 7 CWL = 8 CL = 9 CWL = 5, 6 CWL = 7 CWL = 8 CL = 10 CWL = 5, 6 CWL = 7 CWL = 8 CL = 11 CWL = 5, 6, 7 CWL = 8 Supported CL settings Supported CWL settings Notes: Min
-125E 10-10-10
-125 11-11-11 Min 13.75 13.75 48.75 35 Max - - - 9 x tREFI Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns CK CK 1 2, 3 3 2 2, 3 3 3 2, 3 2, 3 3 3 2 2, 3 2, 3 3 2, 3 2, 3 3 2 2, 3 3 2 Notes
Max - - - 9 x tREFI 3.3
Min 12.5 12.5 47.5 35 2.5
Max - - - 9 x tREFI 3.3
RCD
t
11.25 11.25 46.25 35 2.5
RP
t
RC
t
RAS (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG) (AVG)
tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK
Reserved Reserved 2.5 3.3
Reserved 2.5 3.3
Reserved 2.5 3.3
Reserved Reserved Reserved 1.875 <2.5
Reserved Reserved Reserved 1.875 <2.5
Reserved Reserved Reserved Reserved Reserved Reserved Reserved 1.875 <2.5
Reserved Reserved Reserved 1.875 1.5 <2.5 <1.875
Reserved Reserved Reserved 1.875 <2.5
Reserved Reserved Reserved 1.5 <1.875
Reserved Reserved Reserved Reserved Reserved Reserved 1.5 <1.875
Reserved Reserved 1.5 1.25 <1.875 <1.5
Reserved Reserved 1.5 1.25 <1.875 <1.5
Reserved 1.5 1.25 <1.875 <1.5
Reserved Reserved 1.25 <1.5 6, 8, 10, 11 5, 6, 7, 8
Reserved 1.25 <1.5 5, 6, 7, 8, 9, 10, 11 5, 6, 7, 8
Reserved 1.25 <1.5 5, 6, 7, 8, 9, 10, 11 5, 6, 7, 8
1. tREFI depends on TOPER. 2. The CL and CWL settings result in tCK requirements. When making a selection of tCK, both CL and CWL requirement settings need to be fulfilled. 3. Reserved settings are not allowed.
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Table 53:
Electrical Characteristics and AC Operating Conditions (Sheet 1 of 7)
Notes: 1-8 apply to the entire table; notes appear on page 74 DDR3-800 DDR3-1066 Min Max DDR3-1333 Min Max DDR3-1600 Min Max Units Notes
PDF: 09005aef826aa906/Source: 09005aef82a357c3 1Gb_DDR3_3.fm - Rev. D 8/1/08 EN
Parameter
Symbol
Min
Max
Clock Timing Clock period average: DLL disable mode TC = 0C to 85C TC = >85C to 95C
tCK tCH tCL tCKDLL_DIS
8 8
7,800 3,900 0.53 0.53 100 90 - - 200 180
8 8 0.47 0.47 -90 -80 0.43 0.43 180 160
7,800 3,900 0.53 0.53 90 80 - -
8 8 0.47 0.47 -80 -70 0.43 0.43 160 140
7,800 3,900 0.53 0.53 80 70 - -
8 8 0.47 0.47 -70 -60 0.43 0.43 140 120
7,800 3,900 0.53 0.53 70 60 - -
ns ns ns CK CK ps ps ps
tCK
9 10, 11 12 12 13 13 14 15 16 16 17 17 17 17 17 17 17 17 17 17 17 17
Clock period average: DLL enable mode High pulse width average Low pulse width average Clock period jitter Clock absolute period Clock absolute high pulse width Clock absolute low pulse width Cycle-to-cycle jitter Cumulative error across DLL locked DLL locking 2 cycles 3 cycles 4 cycles 5 cycles 6 cycles 7 cycles 8 cycles 9 cycles 10 cycles 11 cycles 12 cycles n = 13, 14 . . . 49, 50 cycles DLL locked DLL locking
(AVG) (AVG) (AVG) 0.47 0.47 -100 -90 0.43 0.43
See "Speed Bin Tables" on page 63 for tCK range allowed
tJITPER tJITPER, LCK tCK(ABS) tCH tCL
MIN = tCK (AVG) MIN + tJITPER MIN; MAX = tCK (AVG) MAX + tJITPER MAX
(ABS) (ABS)
(AVG)
tCK (AVG)
tJITCC tJITCC, LCK tERR 2PER tERR 3PER tERR 4PER tERR 5PER tERR 6PER tERR 7PER tERR 8PER tERR 9PER tERR 10PER tERR 11PER tERR 12PER tERR nPER
ps ps 103 122 136 147 155 163 169 175 180 184 188 ps ps ps ps ps ps ps ps ps ps ps ps
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-147 -175 -194 -209 -222 -232 -241 -249 -257 -263 -269
147 175 194 209 222 232 241 249 257 263 269
-132 -157 -175 -188 -200 -209 -217 -224 -231 -237 -242
tERRnPER
132 157 175 188 200 209 217 224 231 237 242
-118 -140 -155 -168 -177 -186 -193 -200 -205 -210 -215
118 140 155 168 177 186 193 200 205 210 215
-103 -122 -136 -147 -155 -163 -169 -175 -180 -184 -188
1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
MIN = (1 + 0.68ln[n]) x tJITPER MIN tERRnPER MAX = (1 + 0.68ln[n]) x tJITPER MAX
Table 53:
Electrical Characteristics and AC Operating Conditions (Sheet 2 of 7)
Notes: 1-8 apply to the entire table; notes appear on page 74 DDR3-800 DDR3-1066 Min Max DDR3-1333 Min Max DDR3-1600 Min Max Units Notes
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Parameter
Symbol
Min
Max
DQ Input Timing Data setup time to DQS, DQS# Data hold time from DQS, DQS# Data setup time to DQS, DQS# Base (specification) VREF @ 1 V/ns Base (specification) VREF @ 1 V/ns Base (specification) VREF @ 1 V/ns Data hold time from DQS, DQS# Base (specification) VREF @ 1 V/ns Minimum data pulse width
tDIPW tDH tDS
75 250 150 250 - - - - 600
- - - - - - - - -
25 200 100 200 - - - - 490
- - - - - - - - -
- - - - 30 180 65 165 400
- - - - - - - - -
- - - - 10 160 45 145 360
- - - - - - - - -
ps ps ps ps ps ps ps ps ps
18, 19 19, 20 18,19 19, 20 18, 19, 21 19, 20,21 18, 19, 21 19, 20, 21 42
AC175
tDH
AC175
tDS
AC150
AC150
68
DQS, DQS# to DQ skew, per access DQ output hold time from DQS, DQS#
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
DQ Output Timing
tDQSQ tQH tLZ tHZ
- 0.38 -800 -
200 - 400 400
- 0.38 -600 -
150 - 300 300
- 0.38 -500 -
125 - 250 250
- 0.38 -450 -
100 - 225 225
ps
tCK
22 23, 24 23, 24
(AVG) DQ Low-Z time from CK, CK# DQ High-Z time from CK, CK# (DQ) (DQ) ps ps
1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
DQ Strobe Input Timing DQS, DQS# rising to CK, CK# rising DQS, DQS# differential input low pulse width DQS, DQS# differential input high pulse width DQS, DQS# falling setup to CK, CK# rising DQS, DQS# falling hold from CK, CK# rising DQS, DQS# differential WRITE preamble DQS, DQS# differential WRITE postamble
tDQSS tDQSL tDQSH tDSS tDSH tWPRE tWPST
-0.25 0.45 0.45 0.2 0.2 0.9 0.3
0.25 0.55 0.55 - - - -
-0.25 0.45 0.45 0.2 0.2 0.9 0.3
0.25 0.55 0.55 - - - -
-0.25 0.45 0.45 0.2 0.2 0.9 0.3
0.25 0.55 0.55 - - - -
-0.27 0.45 0.45 0.18 0.18 0.9 0.3
0.27 0.55 0.55 - - - -
CK CK CK CK CK CK CK
26
26 26
Table 53:
Electrical Characteristics and AC Operating Conditions (Sheet 3 of 7)
Notes: 1-8 apply to the entire table; notes appear on page 74 DDR3-800 DDR3-1066 Min Max DDR3-1333 Min Max DDR3-1600 Min Max Units Notes
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Parameter
Symbol
Min
Max
DQ Strobe Output Timing DQS, DQS# rising to/from rising CK, CK# DQS, DQS# rising to/from rising CK, CK# when DLL is disabled DQS, DQS# differential output high time DQS, DQS# differential output low time DQS, DQS# Low-Z time (RL - 1) DQS, DQS# High-Z time (RL + BL/2) DQS, DQS# differential READ preamble DQS, DQS# differential READ postamble
tDQSCK tDQSCK
-400 1 0.38 0.38 -800 - 0.9 0.3
400 10 - - 400 400 Note 25 Note 28
-300 1 0.38 0.38 -600 - 0.9 0.3
300 10 - - 300 300 Note 25 Note 28
-255 1 0.40 0.40 -500 - 0.9 0.3
255 10 - - 250 250 Note 25 Note 28
-225 1 0.40 0.40 -450 - 0.9 0.3
225 10 - - 225 225 Note 25 Note 28
ps ns CK CK ps ps CK CK
24 27 22 22 23, 24 23, 24 24, 25 24, 28
DLL_DIS
tQSH tQSL tLZ tHZ
(DQS) (DQS)
tRPRE tRPST
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Table 53:
Electrical Characteristics and AC Operating Conditions (Sheet 4 of 7)
Notes: 1-8 apply to the entire table; notes appear on page 74 DDR3-800 DDR3-1066 Min Max DDR3-1333 Min Max DDR3-1600 Min Max Units Notes
PDF: 09005aef826aa906/Source: 09005aef82a357c3 1Gb_DDR3_3.fm - Rev. D 8/1/08 EN
Parameter
Symbol
Min
Max
Command and Address Timing DLL locking time CTRL, CMD, ADDR setup to CK,CK# CTRL, CMD, ADDR hold from CK,CK# CTRL, CMD, ADDR setup to CK,CK# Base (specification) VREF @ 1 V/ns Base (specification) VREF @ 1 V/ns Base (specification) VREF @ 1 V/ns Minimum CTRL, CMD, ADDR pulse width ACTIVATE to internal READ or WRITE delay PRECHARGE command period ACTIVATE-to-PRECHARGE command period ACTIVATE-to-ACTIVATE command period ACTIVATE-toACTIVATE minimum command period 1KB page size 2KB page size
tFAW tWR tWTR tRTP tCCD tDAL tMRD tMOD t tIPW tRCD tRP tRAS tRC tRRD tIS tDLLK tIS
512 200 375 275 375 - - 900
- - - - - - - -
512 125 300 200 300 - - 780
- - - - - - - -
512 65 240 140 240 190 340 620
- - - - - - - -
512 45 220 120 220 170 320 560
tRCD
- - - - - - - -
CK ps ps ps ps ps ps ps ns ns ns ns CK CK ns ns ns CK CK CK CK CK CK CK
29 30, 31 20, 31 30, 31 20, 31 21, 30, 31 20, 21, 31 42 32 32 32, 33 32 32 32 32 32
AC175
tIH
AC150
See "Speed Bin Tables" on page 63 for
See "Speed Bin Tables" on page 63 for tRP See "Speed Bin Tables" on page 63 for tRAS See "Speed Bin Tables" on page 63 for tRC MIN = greater of 4CK or 10ns 40 50 - - MIN = greater of 4CK or 7.5ns 37.5 50 - - MIN = greater of 4CK or 6ns 30 45 - - MIN = greater of 4CK or 6ns 30 40 - -
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MIN = greater of 4CK or 10ns
MIN = greater of 4CK or 7.5ns
Four ACTIVATE windows for 1KB page size Four ACTIVATE windows for 2KB page size Write recovery time Delay from start of internal WRITE transaction to internal READ command READ-to-PRECHARGE time CAS#-to-CAS# command delay Auto precharge write recovery + precharge time MODE REGISTER SET command cycle time MODE REGISTER SET command update delay MULTIPURPOSE REGISTER READ burst end to mode register set for multipurpose register exit
1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
MIN = 15ns; MAX = n/a MIN = greater of 4CK or 7.5ns; MAX = n/a MIN = greater of 4CK or 7.5ns; MAX = n/a MIN = 4CK; MAX = n/a MIN = WR + tRP/tCK (AVG); MAX = n/a MIN = 4CK; MAX = n/a MIN = greater of 12CK or 15ns; MAX = n/a MIN = 1CK; MAX = n/a
32, 33, 34 32, 35 32, 33
MPRR
Table 53:
Electrical Characteristics and AC Operating Conditions (Sheet 5 of 7)
Notes: 1-8 apply to the entire table; notes appear on page 74 DDR3-800 DDR3-1066 Min Max DDR3-1333 Min Max DDR3-1600 Min Max Units Notes
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Parameter
Symbol
Min
Max
Calibration Timing ZQCL command: Long POWER-UP and RESET calibration time operation Normal operation ZQCS command: Short calibration time
tZQINIT tZQOPER tZQCS
512 256 64
- - -
512 256 64
- - -
512 256 64
- - -
512 256 64
- - -
CK CK CK
Initialization and Reset Timing Exit reset from CKE HIGH to a valid command Begin power supply ramp to power supplies stable RESET# LOW to power supplies stable RESET# LOW to I/O and RTT High-Z
tXPR tVDDPR tRPS tIOz
MIN = greater of 5CK or tRFC + 10ns; MAX = n/a MIN = n/a; MAX = 200 MIN = 0; MAX = 200 MIN = n/a; MAX = 20 Refresh Timing MIN = 110; MAX = 9 x tREFI (REFRESH-to-REFRESH command period) 64 (1X) 32 (2X) 7.8 (64ms/8,192) 3.9 (32ms/8,192) Self Refresh Timing
CK ms ms ns 36
REFRESH-to-ACTIVATE or REFRESH command period Maximum refresh period Maximum average periodic refresh TC = 0C to 85C TC = >85C to 95C TC = 0C to 85C TC = >85C to 95C
tRFC
ns ms ms s s 37 37 37 37
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-
tREFI
1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Exit self refresh to commands not requiring a locked DLL Exit self refresh to commands requiring a locked DLL Minimum CKE low pulse width for self refresh entry to self refresh exit timing Valid clocks after self refresh entry or powerdown entry Valid clocks before self refresh exit, powerdown exit, or reset exit
tXS tXSDLL tCKESR tCKSRE tCKSRX
MIN = greater of 5CK or tRFC + 10ns; MAX = n/a MIN = tDLLK (MIN); MAX = n/a MIN = tCKE (MIN) + CK; MAX = n/a MIN = greater of 5CK or 10ns; MAX = n/a MIN = greater of 5CK or 10ns; MAX = n/a
CK CK CK CK CK 29
Table 53:
Electrical Characteristics and AC Operating Conditions (Sheet 6 of 7)
Notes: 1-8 apply to the entire table; notes appear on page 74 DDR3-800 DDR3-1066 Min Max DDR3-1333 Min Max DDR3-1600 Min Max Units Notes
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Parameter
Symbol
Min
Max
Power-Down Timing CKE MIN pulse width Command pass disable delay Power-down entry to power-down exit timing Begin power-down period prior to CKE registered HIGH Power-down entry period: ODT either synchronous or asynchronous Power-down exit period: ODT either synchronous or asynchronous
tCKE
(MIN) Greater of 3CK or Greater of 3CK or Greater of 3CK or Greater of 3CK or 7.5ns 5.625ns 5.625ns 5ns MIN = 1; MAX = n/a MIN =
tCKE
CK CK
tCPDED tPD tANPD
(MIN); MAX = 9 x WL - 1CK
tREFI
CK CK CK CK
PDE PDX
Greater of tANPD or tRFC - REFRESH command to CKE LOW time
tANPD
+ tXPDLL
Power-Down Entry Minimum Timing ACTIVATE command to power-down entry PRECHARGE/PRECHARGE ALL command to power-down entry REFRESH command to power-down entry MRS command to power-down entry
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2006 Micron Technology, Inc. All rights reserved.
tACTPDEN tPRPDEN tREFPDEN tMRSPDEN tRDPDEN tWRPDEN tWRPDEN tWRAPDEN tWRAPDEN
MIN = 1 MIN = 1 MIN = 1 MIN = tMOD (MIN) MIN = RL + 4 + 1 MIN = WL + 4 + tWR/tCK (AVG) MIN = WL + 2 + tWR/tCK (AVG) MIN = WL + 4 + WR + 1 MIN = WL + 2 + WR + 1 Power-Down Exit Timing
CK CK CK CK CK CK 38
72
READ/READ with auto precharge command to power-down entry WRITE command to power-down entry BL8 (OTF, MRS) BC4OTF BC4MRS WRITE with auto BL8 (OTF, MRS) precharge command BC4OTF to power-down entry BC4MRS
1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
CK CK CK
DLL on, any valid command, or DLL off to commands not requiring locked DLL Precharge power-down with DLL off to commands requiring a locked DLL
tXP tXPDLL
MIN = greater of 3CK or 7.5ns; MAX = n/a
MIN = greater of 3CK or 6ns; MAX = n/a
CK CK 29
MIN = greater of 10CK or 24ns; MAX = n/a
Table 53:
Electrical Characteristics and AC Operating Conditions (Sheet 7 of 7)
Notes: 1-8 apply to the entire table; notes appear on page 74 DDR3-800 DDR3-1066 Min Max DDR3-1333 Min Max DDR3-1600 Min Max Units Notes
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Parameter
Symbol
Min
Max
ODT Timing RTT synchronous turn-on delay RTT synchronous turn-off delay RTT turn-on from ODTL on reference RTT turn-off from ODTL off reference Asynchronous RTT turn-on delay (power-down with DLL off) Asynchronous RTT turn-off delay (power-down with DLL off) ODT HIGH time with WRITE command and BL8 ODT HIGH time without WRITE command or with WRITE command and BC4 ODTL on ODTL off
tAON tAOF tAONPD tAOFPD
CWL + AL - 2CK CWL + AL - 2CK -400 0.3 400 0.7 -300 0.3 300 0.7 -250 0.3 250 0.7 -225 0.3 225 0.7
CK CK ps CK ns ns CK CK
39 41 24, 39 40, 41 39 41
MIN = 1; MAX = 9 MIN = 1; MAX = 9 MIN = 6; MAX = n/a MIN = 4; MAX = n/a Dynamic ODT Timing
ODTH8 ODTH4
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RTT_NOM-to-RTT_WR change skew RTT_WR-to-RTT_NOM change skew - BC4 RTT_WR-to-RTT_NOM change skew - BL8 RTT dynamic change skew
ODTLCNW ODTLCNW4 ODTLCNW8
tADC
WL - 2CK 4CK + ODTL off 6CK + ODTL off 0.3 0.7 0.3 0.7 0.3 0.7 0.3 0.7 Write Leveling Timing
CK CK CK CK 40
First DQS, DQS# rising edge DQS, DQS# delay Write leveling setup from rising CK, CK# crossing to rising DQS, DQS# crossing Write leveling hold from rising DQS, DQS# crossing to rising CK, CK# crossing Write leveling output delay Write leveling output error
tWLMRD tWLDQSEN tWLS tWLH tWLO tWLOE
40 25 325 325 0 0
- - - - 9 2
40 25 245 245 0 0
- - - - 9 2
40 25 195 195 0 0
- - - - 9 2
40 25 163 163 0 0
- - - - 7.5 2
CK CK ps ps ns ns
1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables Notes
1. 2. 3. 4. Parameters are applicable with 0C TC +95C and VDD/VDDQ = +1.5V 0.075V. All voltages are referenced to VSS. Output timings are only valid for RON34 output buffer selection. Unit "tCK (AVG)" represents the actual tCK (AVG) of the input clock under operation. Unit "CK" represents one clock cycle of the input clock, counting the actual clock edges. AC timing and IDD tests may use a VIL-to-VIH swing of up to 900mV in the test environment, but input timing is still referenced to VREF (except tIS, tIH, tDS, and tDH use the AC/DC trip points and CK, CK# and DQS, DQS# use their crossing points). The minimum slew rate for the input signals used to test the device is 1 V/ns for singleended inputs and 2 V/ns for differential inputs in the range between VIL(AC) and VIH(AC). All timings that use time-based values (ns, s, ms) should use tCK (AVG) to determine the correct number of clocks (Table 53 on page 67 uses "CK" or "tCK [AVG]" interchangeably). In the case of noninteger results, all minimum limits are to be rounded up to the nearest whole integer, and all maximum limits are to be rounded down to the nearest whole integer. The use of "strobe" or "DQSDIFF" refers to the DQS and DQS# differential crossing point when DQS is the rising edge. The use of "clock" or "CK" refers to the CK and CK# differential crossing point when CK is the rising edge. This output load is used for all AC timing (except ODT reference timing) and slew rates. The actual test load may be different. The output signal voltage reference point is VDDQ/2 for single-ended signals and the crossing point for differential signals (see Figure 32 on page 60). When operating in DLL disable mode, Micron does not warrant compliance with normal mode timings or functionality. The clock's tCK (AVG) is the average clock over any 200 consecutive clocks and tCK(AVG) MIN is the smallest clock rate allowed, with the exception of a deviation due to clock jitter. Input clock jitter is allowed provided it does not exceed values specified and must be of a random Gaussian distribution in nature. Spread spectrum is not included in the jitter specification values. However, the input clock can accommodate spread-spectrum at a sweep rate in the range of 20-60 kHz with an additional 1 percent of tCK (AVG) as a long-term jitter component; however, the spread-spectrum may not use a clock rate below tCK (AVG) MIN. The clock's tCH (AVG) and tCL (AVG) are the average half clock period over any 200 consecutive clocks and is the smallest clock half period allowed, with the exception of a deviation due to clock jitter. Input clock jitter is allowed provided it does not exceed values specified and must be of a random Gaussian distribution in nature. The period jitter (tJITPER) is the maximum deviation in the clock period from the average or nominal clock. It is allowed in either the positive or negative direction. t CH(ABS) is the absolute instantaneous clock high pulse width as measured from one rising edge to the following falling edge. t CL(ABS) is the absolute instantaneous clock low pulse width as measured from one falling edge to the following rising edge. The cycle-to-cycle jitter (tJITCC) is the amount the clock period can deviate from one cycle to the next. It is important to keep cycle-to-cycle jitter at a minimum during the DLL locking time.
5.
6.
7.
8.
9. 10.
11.
12.
13. 14. 15. 16.
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
17. The cumulative jitter error (tERRnPER), where n is the number of clocks between 2 and 50, is the amount of clock time allowed to accumulate consecutively away from the average clock over n number of clock cycles. t 18. DS (base) and tDH (base) values are for a single-ended 1 V/ns DQ slew rate and 2 V/ns differential DQS, DQS# slew rate. 19. These parameters are measured from a data signal (DM, DQ0, DQ1, and so forth) transition edge to its respective data strobe signal (DQS, DQS#) crossing. 20. The setup and hold times are listed converting the base specification values (to which derating tables apply) to VREF when the slew rate is 1 V/ns. These values, with a slew rate of 1 V/ns, are for reference only. 21. Special setup and hold derating and different tVAC numbers apply when using 150mV AC threshold. 22. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJITPER of the input clock (output deratings are relative to the SDRAM input clock). 23. Single-ended signal parameter. 24. The DRAM output timing is aligned to the nominal or average clock. Most output parameters must be derated by the actual jitter error when input clock jitter is present, even when within specification. This results in each parameter becoming larger. The following parameters are required to be derated by subtracting t ERR10PER (MAX): tDQSCK (MIN), tLZ (DQS) MIN, tLZ (DQ) MIN, and tAON (MIN). The following parameters are required to be derated by subtracting tERR10PER (MIN): t DQSCK (MAX), tHZ (MAX), tLZ (DQS) MAX, tLZ (DQ) MAX, and tAON (MAX). The parameter tRPRE (MIN) is derated by subtracting tJITPER (MAX), while tRPRE (MAX) is derated by subtracting tJITPER (MIN). 25. The maximum preamble is bound by tLZDQS (MAX). 26. These parameters are measured from a data strobe signal (DQS, DQS#) crossing to its respective clock signal (CK, CK#) crossing. The specification values are not affected by the amount of clock jitter applied, as these are relative to the clock signal crossing. These parameters should be met whether clock jitter is present. 27. The tDQSCK DLL_DIS parameter begins CL + AL - 1 cycles after the READ command. 28. The maximum postamble is bound by tHZDQS (MAX). 29. Commands requiring a locked DLL are: READ (and RDAP) and synchronous ODT commands. In addition, after any change of latency tXPDLL, timing must be met. tIS (base) and tIH (base) values are for a single-ended 1 V/ns control/command/ 30. address slew rate and 2 V/ns CK, CK# differential slew rate. 31. These parameters are measured from a command/address signal transition edge to its respective clock (CK, CK#) signal crossing. The specification values are not affected by the amount of clock jitter applied as the setup and hold times are relative to the clock signal crossing that latches the command/address. These parameters should be met whether clock jitter is present. 32. For these parameters, the DDR3 SDRAM device supports tnPARAM (nCK) = RU(tPARAM [ns]/tCK[AVG] [ns]), assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP (nCK) = RU(tRP/tCK[AVG]) if all input clock jitter specifications are met. This means for DDR3-800 6-6-6, of which tRP = 15ns, the device will support tnRP = RU(tRP/tCK[AVG]) = 6 as long as the input clock jitter specifications are met. That is, the PRECHARGE command at T0 and the ACTIVATE command at T0 + 6 are valid even if six clocks are less than 15ns due to input clock jitter. 33. During READs and WRITEs with auto precharge, the DDR3 SDRAM will hold off the internal PRECHARGE command until tRAS (MIN) has been satisfied.
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
34. When operating in DLL disable mode, the greater of 4CK or 15ns is satisfied for tWR. 35. The start of the write recovery time is defined as follows: - For BL8 (fixed by MRS and OTF): Rising clock edge four clock cycles after WL - For BC4 (OTF): Rising clock edge four clock cycles after WL - For BC4 (fixed by MRS): Rising clock edge two clock cycles after WL 36. RESET# should be LOW as soon as power starts to ramp to ensure the outputs are in High-Z. Until RESET# is LOW, the outputs are at risk of driving and could result in excessive current, depending on bus activity. 37. The refresh period is 64ms. This equates to an average refresh rate of 7.8125s. However, nine REFRESH commands must be asserted at least once every 70.3s. 38. Although CKE is allowed to be registered LOW after a REFRESH command when t REFPDEN (MIN) is satisfied, there are cases where additional time such as t XPDLL (MIN) is required. 39. ODT turn-on time MIN is when the device leaves High-Z and ODT resistance begins to turn on. ODT turn-on time maximum is when the ODT resistance is fully on. The ODT reference load is shown in Figure 24 on page 49. 40. Half-clock output parameters must be derated by the actual tERR10PER and tJITDTY when input clock jitter is present. This results in each parameter becoming larger. The parameters tADC (MIN) and tAOF (MIN) are each required to be derated by subtracting both tERR10PER (MAX) and tJITDTY (MAX). The parameters tADC (MAX) and t AOF (MAX) are required to be derated by subtracting both tERR10PER (MAX) and t JITDTY (MAX). 41. ODT turn-off time minimum is when the device starts to turn off ODT resistance. ODT turn-off time maximum is when the DRAM buffer is in High-Z. The ODT reference load is shown in Figure 25 on page 51. This output load is used for ODT timings (see Figure 32 on page 60). 42. Pulse width of a input signal is defined as the width between the first crossing of VREF(DC) and the consecutive crossing of VREF(DC).
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables Command and Address Setup, Hold, and Derating
The total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS (base) and tIH (base) values (see Table 54; values come from Table 53 on page 67) to the tIS and tIH derating values (see Table 55 on page 78 and Table 56 on page 78), respectively. Example: tIS (total setup time) = tIS (base) + tIS. For a valid transition, the input signal has to remain above/below VIH(AC)/VIL(AC) for some time tVAC (see Table 56 on page 78). Although the total setup time for slow slew rates might be negative (for example, a valid input signal will not have reached VIH[AC]/VIL[AC] at the time of the rising clock transition), a valid input signal is still required to complete the transition and to reach VIH(AC)/ VIL(AC) (see Figure 17 on page 42 for input signal requirements). For slew rates which fall between the values listed in Table 56 on page 78 and Table 57 on page 79, the derating values may be obtained by linear interpolation. Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC) MIN. Setup (tIS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC) MAX. If the actual signal is always earlier than the nominal slew rate line between the shaded "VREF(DC)-to-AC region," use the nominal slew rate for derating value (see Figure 35 on page 80). If the actual signal is later than the nominal slew rate line anywhere between the shaded "VREF(DC)-to-AC region," the slew rate of a tangent line to the actual signal from the AC level to the DC level is used for derating value (see Figure 37 on page 82). Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC) MAX and the first crossing of VREF(DC). Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC) MIN and the first crossing of VREF(DC). If the actual signal is always later than the nominal slew rate line between the shaded "DC-to-VREF(DC) region," use the nominal slew rate for derating value (see Figure 36 on page 81). If the actual signal is earlier than the nominal slew rate line anywhere between the shaded "DC-to-VREF(DC) region," the slew rate of a tangent line to the actual signal from the DC level to the VREF(DC) level is used for derating value (see Figure 38 on page 83). Table 54: Command and Address Setup and Hold Values Referenced at 1 V/ns - AC/DC-Based
DDR3-800 200 275 n/a DDR3-1066 125 200 n/a DDR3-1333 65 140 190 DDR3-1600 45 120 170 Units ps ps ps Reference VIH(AC)/VIL(AC) VIH(DC)/VIL(DC) VIH(AC)/VIL(AC)
Symbol
tIS tIH t
(base) (base)
IS (base): AC150
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Table 55: DDR3-800, DDR3-1066, DDR3-1333, and DDR3-1600 Derating Values for tIS/tIH - AC/DCBased
AC175 threshold tIS, tIH Derating (ps) - AC/DC-Based AC175 Threshold: VIH(AC) = VREF(DC) + 175mV, VIL(AC) = VREF(DC) - 175mV CK, CK# Differential Slew Rate CMD/ ADDR Slew Rate V/ns 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 4.0 V/ns tIS 88 59 0 -2 -6 -11 -17 -35 -62 tIH 50 34 0 -4 -10 -16 -26 -40 -60 3.0 V/ns tIS 88 59 0 -2 -6 -11 -17 -35 -62 tIH 50 34 0 -4 -10 -16 -26 -40 -60 2.0 V/ns tIS 88 59 0 -2 -6 -11 -17 -35 -62 tIH 50 34 0 -4 -10 -16 -26 -40 -60 1.8 V/ns tIS 96 67 8 6 2 -3 -9 -27 -54 tIH 58 42 8 4 -2 -8 -18 -32 -52 1.6 V/ns tIS 104 75 16 14 10 5 -1 -19 -46 tIH 66 50 16 12 6 0 -10 -24 -44 1.4 V/ns tIH 112 83 24 22 18 13 7 -11 -38 tIH 74 58 24 20 14 8 -2 -16 -36 1.2 V/ns tIS 120 91 32 30 26 21 15 -2 -30 tIH 84 68 34 30 24 18 8 -6 -26 1.0 V/ns tIS 128 99 40 38 34 29 23 5 -22 tIH 100 84 50 46 40 34 24 10 -10
Table 56:
DDR3-1333 and DDR3-1600 Derating Values for tIS/tIH - AC/DC-Based
AC150 threshold tIS, tIH Derating (ps) - AC/DC-Based AC150 Threshold: VIH(AC) = VREF(DC) + 150mV, VIL(AC) = VREF(DC) - 150mV CK, CK# Differential Slew Rate
CMD/ ADDR Slew Rate V/ns 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4
4.0 V/ns tIS 75 50 0 0 0 0 -1 -10 -25 tIH 50 34 0 -4 -10 -16 -26 -40 -60
3.0 V/ns tIS 75 50 0 0 0 0 -1 -10 -25 tIH 50 34 0 -4 -10 -16 -26 -40 -60
2.0 V/ns tIS 75 50 0 0 0 0 -1 -10 -25 tIH 50 34 0 -4 -10 -16 -26 -40 -60
1.8 V/ns tIS 83 58 8 8 8 8 7 -2 -17 tIH 58 42 8 4 -2 -8 -18 -32 -52
1.6 V/ns tIS 91 66 16 16 16 16 15 6 -9 tIH 66 50 16 12 6 0 -10 -24 -44
1.4 V/ns tIH 99 74 24 24 24 24 23 14 -1 tIH 74 58 24 20 14 8 -2 -16 -36
1.2 V/ns tIS 107 82 32 32 32 32 31 22 7 tIH 84 68 34 30 24 18 8 -6 -26
1.0 V/ns tIS 115 90 40 40 40 40 39 30 15 tIH 100 84 50 46 40 34 24 10 -10
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Table 57: Minimum Required Time tVAC Above VIH(AC) for Valid Transition
Below VIL(AC) Slew Rate (V/ns) >2.0 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 <0.5
t
VAC at 175mV (ps) 75 57 50 38 34 29 22 13 0 0
t
VAC at 150mV (ps) 175 170 167 163 162 161 159 155 150 150
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Figure 35: Nominal Slew Rate and tVAC for tIS (Command and Address - Clock)
tIS CK tIH tIS tIH
CK# DQS#
DQS
VDDQ tVAC
VIH(AC) MIN VREF to AC region VIH(DC) MIN Nominal slew rate VREF(DC) Nominal slew rate VIL(DC) MAX VREF to AC region VIL(DC) MAX
tVAC
VSS
TF VREF(DC) - VIL(AC) MAX TF
TR Setup slew rate = rising signal VIH(AC) MIN - VREF(DC) TR
Setup slew rate falling signal =
Notes:
1. Both the clock and the strobe are drawn on different time scales.
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Figure 36: Nominal Slew Rate for tIH (Command and Address - Clock)
tIS CK tIH tIS tIH
CK# DQS#
DQS
VDDQ
VIH(AC) MIN
VIH(DC) MIN
DC to VREF region VREF(DC) Nominal slew rate
Nominal slew rate
DC to VREF region
VIL(DC) MAX
VIL(AC) MAX
VSS
TR Hold slew rate rising signal = VREF(DC) - VIL(DC) MAX TR
TF VIH(DC) MIN - VREF(DC) TF
Hold slew rate falling signal =
Notes:
1. Both the clock and the strobe are drawn on different time scales.
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Figure 37: Tangent Line for tIS (Command and Address - Clock)
tIS CK tIH tIS tIH
CK# DQS#
DQS
VDDQ Nominal line VIH(AC) MIN VREF to AC region VIH(DC) MIN Tangent line tVAC
VREF(DC) Tangent line
VIL(DC) MAX VREF to AC region VIL(AC) MAX Nominal line VSS
tVAC
TR Setup slew rate rising signal = Tangent line (VIH[DC] MIN - VREF[DC]) TR
TF
Tangent line (VREF[DC] - VIL[AC] MAX) Setup slew rate falling signal = TF
Notes:
1. Both the clock and the strobe are drawn on different time scales.
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Figure 38: Tangent Line for tIH (Command and Address - Clock)
tIS CK tIH tIS tIH
CK# DQS#
DQS
VDDQ
VIH(AC) MIN Nominal line VIH(DC) MIN DC to VREF region
Tangent line
VREF(DC) DC to VREF region VIL( DC) MAX Tangent line Nominal line
VIL( AC) MAX
VSS
TR Hold slew rate rising signal = Hold slew rate falling signal = Tangent line (VREF[DC] - VIL[DC] MAX) TR Tangent line (VIH[DC] MIN - VREF[DC]) TF
TR
Notes:
1. Both the clock and the strobe are drawn on different time scales.
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables Data Setup, Hold, and Derating
The total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDS (base) and tDH (base) values (see Table 58; values come from Table 53 on page 67) to the tDS and tDH derating values (see Table 59 on page 85), respectively. Example: tDS (total setup time) = tDS (base) + tDS. For a valid transition, the input signal has to remain above/below VIH(AC)/VIL(AC) for some time tVAC (see Table 61 on page 86). Although the total setup time for slow slew rates might be negative (for example, a valid input signal will not have reached VIH[AC]/VIL[AC]) at the time of the rising clock transition), a valid input signal is still required to complete the transition and to reach VIH/ VIL(AC). For slew rates which fall between the values listed in Table 59 on page 85, the derating values may obtained by linear interpolation. Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC) MIN. Setup (tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC) MAX. If the actual signal is always earlier than the nominal slew rate line between the shaded "VREF(DC)-to-AC region," use the nominal slew rate for derating value (see Figure 39 on page 87). If the actual signal is later than the nominal slew rate line anywhere between the shaded "VREF(DC)-to-AC region," the slew rate of a tangent line to the actual signal from the AC level to the DC level is used for derating value (see Figure 41 on page 89). Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC) MAX and the first crossing of VREF(DC). Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC) MIN and the first crossing of VREF(DC). If the actual signal is always later than the nominal slew rate line between the shaded "DC-to-VREF(DC) region," use the nominal slew rate for derating value (see Figure 40 on page 88). If the actual signal is earlier than the nominal slew rate line anywhere between the shaded "DC-to-VREF(DC) region," the slew rate of a tangent line to the actual signal from the "DC-to-VREF(DC) region" is used for derating value (see Figure 42 on page 90). Table 58:
Symbol
tDS tDH t tDH
Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) - AC/DC-Based
DDR3-800 75 150 - - DDR3-1066 25 100 - - DDR3-1333 - - 30 65 DDR3-1600 - - 10 45 Units ps ps ps ps Reference VIH(AC)/VIL(AC) VIH(DC)/VIL(DC) VIH(AC)/VIL(AC) VIH(DC)/VIL(DC)
AC175 (base) AC175 (base) AC150 (base)
DS AC150 (base)
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Table 59: DDR3-800, DDR3-1066, DDR3-1333, and DDR3-1600 Derating Values for tDS/tDH - AC/DCBased
AC175 threshold; shaded cells indicate slew rate combinations not supported tDS, tDH Derating (ps) - AC/DC-Based DQS, DQS# Differential Slew Rate 4.0 V/ns DQ Slew Rate V/ns 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH 88 59 0 50 34 0 88 59 0 -2 50 34 0 -4 88 59 0 -2 -6 50 34 0 -4 -10 67 8 6 2 -3 42 8 4 -2 -8 16 14 10 5 -1 16 12 6 0 -10 22 18 13 7 -11 20 14 8 -2 -16 26 21 15 -2 -30 24 18 8 -6 -26 29 23 5 -22 34 24 10 -10
Table 60:
DDR3-1333and DDR3-1600 Derating Values for tDS/tDH - AC/DC-Based
AC150 threshold; shaded cells indicate slew rate combinations not supported tDS, tDH Derating (ps) - AC/DC-Based DQS, DQS# Differential Slew Rate
CMD/ ADDR Slew Rate V/ns 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4
4.0 V/ns tIS 75 50 0 tIH 50 34 0
3.0 V/ns tIS 75 50 0 0 tIH 50 34 0 -4
2.0 V/ns tIS 75 50 0 0 0 tIH 50 34 0 -4 -10
1.8 V/ns tIS 58 8 8 8 8 tIH 42 8 4 -2 -8
1.6 V/ns tIS tIH
1.4 V/ns tIH tIH
1.2 V/ns tIS tIH
1.0 V/ns tIS tIH
16 16 16 16 15
16 12 6 0 -10 24 24 24 23 14 20 14 8 -2 -16 32 32 31 22 7 24 18 8 -6 -26 40 39 30 15 34 24 10 -10
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Table 61: Required Time tVAC Above VIH(AC) (Below VIL[AC]) for Valid Transition
t
VAC at 175mV (ps) Min 75 57 50 38 34 29 22 13 0 0
t
VAC at 150mV (ps) Min 175 170 167 163 162 161 159 155 150 150
Slew Rate (V/ns) >2.0 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 <0.5
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Figure 39: Nominal Slew Rate and tVAC for tDS (DQ - Strobe)
CK
CK# DQS#
DQS tDS VDDQ tVAC tDH tDS tDH
VIH(AC) MIN VREF to AC region VIH(DC) MIN Nominal slew rate VREF(DC) Nominal slew rate VIL(DC) MAX VREF to AC region VIL(AC) MAX
tVAC VSS
TF Setup slew rate = falling signal VREF(DC) - VIL(AC) MAX TF
TR Setup slew rate = rising signal VIH(AC) MIN - VREF(DC) TR
Notes:
1. Both the clock and the strobe are drawn on different time scales.
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Figure 40: Nominal Slew Rate for tDH (DQ - Strobe)
CK
CK# DQS#
DQS tDS tDH tDS tDH
VDDQ
VIH(AC) MIN
VIH(DC) MIN DC to VREF region Nominal slew rate
VREF(DC) Nominal slew rate
DC to VREF region
VIL(DC) MAX
VIL(AC) MAX
VSS
TR VREF(DC) - VIL(DC) MAX TR
TF VIH(DC) MIN - VREF(DC) TF
Hold slew rate = rising signal
Hold slew rate = falling signal
Notes:
1. Both the clock and the strobe are drawn on different time scales.
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Figure 41: Tangent Line for tDS (DQ - Strobe)
CK
CK# DQS#
DQS tDS VDDQ Nominal line tVAC tDH tDS tDH
VIH(AC) MIN VREF to AC region VIH(DC) MIN Tangent line
VREF(DC) Tangent line
VIL(DC) MAX VREF to AC region VIL(AC) MAX Nominal line tVAC VSS Setup slew rate rising signal = TF TR
Tangent line (VIH[AC] MIN - VREF[DC]) TR Tangent line (VREF[DC] - VIL[AC] MAX) TF
Setup slew rate falling signal =
Notes:
1. Both the clock and the strobe are drawn on different time scales.
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1Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables
Figure 42: Tangent Line for tDH (DQ - Strobe)
CK
CK# DQS#
DQS tDS VDDQ tDH tDS tDH
VIH(AC) MIN Nominal line VIH(DC) MIN DC to VREF region
Tangent line
VREF(DC) Tangent line Nominal line
DC to VREF region VIL(DC) MAX
VIL(AC) MAX
VSS
TR Hold slew rate rising signal = Tangent line (VREF[DC] - VIL[DC] MAX) TR Tangent line (VIH[DC] MIN - VREF[DC]) TF
TF
Hold slew rate falling signal =
Notes:
1. Both the clock and the strobe are drawn on different time scales.
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1Gb: x4, x8, x16 DDR3 SDRAM Commands
Commands
Truth Tables
Table 62: Truth Table - Command
Notes 1-5 apply to the entire table CKE Function MODE REGISTER SET REFRESH Self refresh entry Self refresh exit Single-bank PRECHARGE PRECHARGE all banks Bank ACTIVATE WRITE BL8MRS, BC4MRS BC4OTF BL8OTF WRITE with BL8MRS, auto BC4MRS precharge BC4OTF BL8OTF READ BL8MRS, BC4MRS BC4OTF BL8OTF READ with auto precharge BL8MRS, BC4MRS BC4OTF BL8OTF NO OPERATION Device DESELECTED Power-down entry Power-down exit ZQ CALIBRATION LONG ZQ CALIBRATION SHORT Notes: Prev Next BA Symbol Cycle Cycle CS# RAS# CAS# WE# [2:0] MRS REF SRE SRX PRE PREA ACT WR WRS4 WRS8 WRAP WRAPS4 WRAPS8 RD RDS4 RDS8 RDAP RDAPS4 RDAPS8 NOP DES PDE PDX ZQCL ZQCS H H H L H H H H H H H H H H H H H H H H H H L H H H H L H H H H H H H H H H H H H H H H H H L H H H L L L H L L L L L L L L L L L L L L L L L H L H L H L L L L L V H L L L H H H H H H H H H H H H H X H V H V H H L L L V H H H H L L L L L L L L L L L L H X H V H V H H L H H V H L L H L L L L L L H H H H H H H X H V H V L L X X X X X X H L X X 12 V V V V V 6, 11 BA V BA BA BA BA BA BA BA BA BA BA BA BA BA V X V RFU RFU RFU RFU RFU RFU RFU RFU RFU RFU RFU RFU V X V V V V V V L H V L H V L H V L H V X V L H L L L H H H L L L H H H V X V V V CA CA CA CA CA CA CA CA CA CA CA CA V X V 8 8 8 8 8 8 8 8 8 8 8 8 9 10 6 BA V V V V V V An A12 V V V A10 V V V A[11, 9:0] V V V 6 6, 7 Notes
OP code
Row address (RA)
1. Commands are defined by states of CS#, RAS#, CAS#, WE#, and CKE at the rising edge of the clock. The MSB of BA, RA, and CA are device-density and configuration-dependent. 2. RESET# is LOW enabled and used only for asynchronous reset. Thus, RESET# must be held HIGH during any normal operation. 3. The state of ODT does not affect the states described in this table.
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1Gb: x4, x8, x16 DDR3 SDRAM Commands
4. Operations apply to the bank defined by the bank address. For MRS, BA selects one of four mode registers. 5. "V" means "H" or "L" (a defined logic level), and "X" means "Don't Care." 6. See Table 63 for additional information on CKE transition. 7. Self refresh exit is asynchronous. 8. Burst READs or WRITEs cannot be terminated or interrupted. MRS (fixed) and OTF BL/BC are defined in MR0. 9. The purpose of the NOP command is to prevent the DRAM from registering any unwanted commands. A NOP will not terminate an operation that is executing. 10. The DES and NOP commands perform similarly. 11. The power-down mode does not perform any REFRESH operations. 12. ZQ CALIBRATION LONG is used for either ZQINIT (first ZQCL command during initialization) or ZQOPER (ZQCL command after initialization).
Table 63:
Truth Table - CKE
Notes 1-2 apply to the entire table; see Table 62 on page 91 for additional command details CKE
Current State3 Power-down Self refresh Bank(s) active Reading Writing Precharging Refreshing All banks idle
Previous Cycle4 (n - 1) L L L L H H H H H H H Notes:
Present Cycle4 Command5 (n) (RAS#, CAS#, WE#, CS#) L H L H L L L L L L L "Don't Care" DES or NOP "Don't Care" DES or NOP DES or NOP DES or NOP DES or NOP DES or NOP DES or NOP DES or NOP REFRESH
Action5 Maintain power-down Power-down exit Maintain self refresh Self refresh exit Active power-down entry Power-down entry Power-down entry Power-down entry Precharge power-down entry Precharge power-down entry Self refresh
Notes
6
1. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document. 2. tCKE (MIN) means CKE must be registered at multiple consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to achieve the required number of registration clocks. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + tCKE (MIN) + tIH. 3. Current state = The state of the DRAM immediately prior to clock edge n. 4. CKE (n) is the logic state of CKE at clock edge n; CKE (n - 1) was the state of CKE at the previous clock edge. 5. COMMAND is the command registered at the clock edge (must be a legal command as defined in Table 62 on page 91). Action is a result of COMMAND. ODT does not affect the states described in this table and is not listed. 6. Idle state = All banks are closed, no data bursts are in progress, CKE is HIGH, and all timings from previous operations are satisfied. All self refresh exit and power-down exit parameters are also satisfied.
DESELECT (DES)
The DES command (CS# HIGH) prevents new commands from being executed by the DRAM. Operations already in progress are not affected.
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1Gb: x4, x8, x16 DDR3 SDRAM Commands NO OPERATION (NOP)
The NOP command (CS# LOW) prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected.
ZQ CALIBRATION
ZQ CALIBRATION LONG (ZQCL) The ZQCL command is used to perform the initial calibration during a power-up initialization and reset sequence (see Figure 51 on page 107). This command may be issued at any time by the controller depending on the system environment. The ZQCL command triggers the calibration engine inside the DRAM. After calibration is achieved, the calibrated values are transferred from the calibration engine to the DRAM I/O, which are reflected as updated RON and ODT values. The DRAM is allowed a timing window defined by either tZQINIT or tZQOPER to perform the full calibration and transfer of values. When ZQCL is issued during the initialization sequence, the timing parameter tZQINIT must be satisfied. When initialization is complete, subsequent ZQCL commands require the timing parameter tZQOPER to be satisfied. ZQ CALIBRATION SHORT (ZQCS) The ZQCS command is used to perform periodic calibrations to account for small voltage and temperature variations. The shorter timing window is provided to perform the reduced calibration and transfer of values as defined by timing parameter tZQCS. A ZQCS command can effectively correct a minimum of 0.5 percent RON and RTT impedance error within 64 clock cycles, assuming the maximum sensitivities specified in Table 40 on page 56 and Table 41 on page 57.
ACTIVATE
The ACTIVATE command is used to open (or activate) a row in a particular bank for a subsequent access. The value on the BA[2:0] inputs selects the bank, and the address provided on inputs A[n:0] selects the row. This row remains open (or active) for accesses until a PRECHARGE command is issued to that bank. A PRECHARGE command must be issued before opening a different row in the same bank.
READ
The READ command is used to initiate a burst read access to an active row. The address provided on inputs A[2:0] selects the starting column address depending on the burst length and burst type selected (see Table 68 on page 111 for additional information). The value on input A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the READ burst. If auto precharge is not selected, the row will remain open for subsequent accesses. The value on input A12 (if enabled in the mode register) when the READ command is issued determines whether BC4 (chop) or BL8 is used. After a READ command is issued, the READ burst may not be interrupted. A summary of READ commands is shown in Table 64 on page 94.
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1Gb: x4, x8, x16 DDR3 SDRAM Commands
Table 64: READ Command Summary
CKE Function READ BL8MRS, BC4MRS BC4OTF BL8OTF Symbol RD RDS4 RDS8 Previous Next BA Cycle Cycle CS# RAS# CAS# WE# [3:0] H H H H H H L L L L L L H H H H H H L L L L L L H H H H H H BA BA BA BA BA BA An RFU RFU RFU RFU RFU RFU A12 V L H V L H A10 L L L H H H A[11, 9:0] CA CA CA CA CA CA
READ BL8MRS, BC4MRS RDAP with auto BC4OTF RDAPS4 precharge BL8OTF RDAPS8
WRITE
The WRITE command is used to initiate a burst write access to an active row. The value on the BA[2:0] inputs selects the bank. The value on input A10 determines whether or not auto precharge is used. The value on input A12 (if enabled in the MR) when the WRITE command is issued determines whether BC4 (chop) or BL8 is used. The WRITE command summary is shown in Table 65. Input data appearing on the DQ is written to the memory array subject to the DM input logic level appearing coincident with the data. If a given DM signal is registered LOW, the corresponding data will be written to memory. If the DM signal is registered HIGH, the corresponding data inputs will be ignored and a WRITE will not be executed to that byte/column location. Table 65: WRITE Command Summary
CKE Function WRITE BL8MRS, BC4MRS BC4OTF BL8OTF WRITE with auto precharge BL8MRS, BC4MRS BC4OTF BL8OTF Prev Next BA Symbol Cycle Cycle CS# RAS# CAS# WE# [3:0] WR WRS4 WRS8 WRAP WRAPS4 WRAPS8 H H H H H H L L L L L L H H H H H H L L L L L L L L L L L L BA BA BA BA BA BA An RFU RFU RFU RFU RFU RFU A12 V L H V L H A10 L L L H H H A[11, 9:0] CA CA CA CA CA CA
PRECHARGE
The PRECHARGE command is used to deactivate the open row in a particular bank or in all banks. The bank(s) are available for a subsequent row access a specified time (tRP) after the PRECHARGE command is issued, except in the case of concurrent auto precharge. A READ or WRITE command to a different bank is allowed during concurrent auto precharge as long as it does not interrupt the data transfer in the current bank and does not violate any other timing parameters. Input A10 determines whether one or all banks are precharged. In the case where only one bank is precharged, inputs BA[2:0] select the bank; otherwise, BA[2:0] are treated as "Don't Care." After a bank is precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. A PRECHARGE command is treated as a NOP if
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1Gb: x4, x8, x16 DDR3 SDRAM Commands
there is no open row in that bank (idle state) or if the previously open row is already in the process of precharging. However, the precharge period is determined by the last PRECHARGE command issued to the bank.
REFRESH
REFRESH is used during normal operation of the DRAM and is analogous to CAS#before-RAS# (CBR) refresh or auto refresh. This command is nonpersistent, so it must be issued each time a refresh is required. The addressing is generated by the internal refresh controller. This makes the address bits a "Don't Care" during a REFRESH command. The DRAM requires REFRESH cycles at an average interval of 7.8s (maximum when TC 85C or 3.9s MAX when TC 95C). To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. A maximum of eight REFRESH commands can be posted to any given DRAM, meaning that the maximum absolute interval between any REFRESH command and the next REFRESH command is nine times the maximum average interval refresh rate. The REFRESH period begins when the REFRESH command is registered and ends tRFC (MIN) later. Figure 43: Refresh Mode
T0 CK# CK T1 T2 T3 T4 Ta0 Ta1 Tb0 Tb1 Tb2
tCK
tCH
tCL Valid1 Valid1 Valid1
CKE
Command
NOP1
PRE
NOP1
NOP1
REF
NOP1
REF2
NOP1
NOP1
ACT
Address All banks A10 One bank
RA
RA
BA[2:0]
Bank(s)3
BA
DQS, DQS#4
DQ4
DM4 tRP tRFC (MIN) tRFC2
Indicates A Break in Time Scale
Don't Care
Notes:
1. NOP commands are shown for ease of illustration; other valid commands may be possible at these times. CKE must be active during the PRECHARGE, ACTIVATE, and REFRESH commands, but may be inactive at other times (see "Power-Down Mode" on page 151). 2. The second REFRESH is not required but depicts two back-to-back REFRESH commands. 3. "Don't Care" if A10 is HIGH at this point; however, A10 must be HIGH if more than one bank is active (must precharge all active banks). 4. For operations shown, DM, DQ, and DQS signals are all "Don't Care"/High-Z.
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1Gb: x4, x8, x16 DDR3 SDRAM Commands SELF REFRESH
The SELF REFRESH command is used to retain data in the DRAM, even if the rest of the system is powered down. When in the self refresh mode, the DRAM retains data without external clocking. The self refresh mode is also a convenient method used to enable/ disable the DLL (see "DLL Disable Mode" on page 96) as well as to change the clock frequency within the allowed synchronous operating range (see "Input Clock Frequency Change" on page 99). All power supply inputs (including VREFCA and VREFDQ) must be maintained at valid levels upon entry/exit and during SELF REFRESH operation.
DLL Disable Mode
If the DLL is disabled by the mode register (MR1[0] can be switched during initialization or later), the DRAM is targeted, but not guaranteed, to operate similarly to the normal mode with a few notable exceptions: * The DRAM supports only one value of CAS latency (CL = 6) and one value of CAS WRITE latency (CWL = 6). * DLL disable mode affects the read data clock-to-data strobe relationship (tDQSCK), but not the read data-to-data strobe relationship (tDQSQ, tQH). Special attention is needed to line the read data up with the controller time domain when the DLL is disabled. * In normal operation (DLL on), tDQSCK starts from the rising clock edge AL + CL cycles after the READ command. In DLL disable mode, tDQSCK starts AL + CL - 1 cycles after the READ command. Additionally, with the DLL disabled, the value of t DQSCK could be larger than tCK. The ODT feature is not supported during DLL disable mode (including dynamic ODT). The ODT resistors must be disabled by continuously registering the ODT ball LOW by programming RTT_NOM MR1[9, 6, 2] and RTT_WR MR2[10, 9] to "0" while in the DLL disable mode. Specific steps must be followed to switch between the DLL enable and DLL disable modes due to a gap in the allowed clock rates between the two modes (tCK [AVG] MAX and tCK [DLL disable] MIN, respectively). The only time the clock is allowed to cross this clock rate gap is during self refresh mode. Thus, the required procedure for switching from the DLL enable mode to the DLL disable mode is to change frequency during self refresh (see Figure 44 on page 97): 1. Starting from the idle state (all banks are precharged, all timings are fulfilled, ODT is turned off, and RTT_NOM and RTT_WR are High-Z), set MR1[0] to "1" to disable the DLL. 2. Enter self refresh mode after tMOD has been satisfied. 3. After tCKSRE is satisfied, change the frequency to the desired clock rate. 4. Self refresh may be exited when the clock is stable with the new frequency for tCKSRX. After tXS is satisfied, update the mode registers with appropriate values. 5. The DRAM will be ready for its next command in the DLL disable mode after the greater of tMRD or tMOD has been satisfied. A ZQCL command should be issued with appropriate timings met as well.
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1Gb: x4, x8, x16 DDR3 SDRAM Commands
Figure 44: DLL Enable Mode to DLL Disable Mode
T0 CK# CK CKE Command MRS2 6 NOP tMOD SRE3 NOP tCKSRE tCKESR ODT9
Valid1 Valid1
T1
Ta0
Ta1
Tb0
Tc0
Td0
Td1
Te0
Te1
Tf0
SRX4 7 tCKSRX8
NOP tXS
MRS5
NOP tMOD
Valid1
Indicates A Break in Time Scale
Don't Care
Notes:
1. 2. 3. 4. 5. 6. 7. 8. 9.
Any valid command. Disable DLL by setting MR1[0] to "1." Enter SELF REFRESH. Exit SELF REFRESH. Update the mode registers with the DLL disable parameters setting. Starting with the idle state, RTT is in the High-Z state. Change frequency. Clock must be stable tCKSRX. Static LOW in case RTT_NOM or RTT_WR is enabled; otherwise, static LOW or HIGH.
A similar procedure is required for switching from the DLL disable mode back to the DLL enable mode. This also requires changing the frequency during self refresh mode (see Figure 45 on page 98). 1. Starting from the idle state (all banks are precharged, all timings are fulfilled, ODT is turned off, and RTT_NOM and RTT_WR are High-Z), enter self refresh mode. 2. After tCKSRE is satisfied, change the frequency to the new clock rate. 3. Self refresh may be exited when the clock is stable with the new frequency for tCKSRX. After tXS is satisfied, update the mode registers with the appropriate values. At a minimum, set MR1[0] to "0" to enable the DLL. Wait tMRD, then set MR0[8] to "1" to enable DLL RESET. 4. After another tMRD delay is satisfied, then update the remaining mode registers with the appropriate values. 5. The DRAM will be ready for its next command in the DLL enable mode after the greater of tMRD or tMOD has been satisfied. However, before applying any command or function requiring a locked DLL, a delay of tDLLK after DLL RESET must be satisfied. A ZQCL command should be issued with the appropriate timings met as well.
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1Gb: x4, x8, x16 DDR3 SDRAM Commands
Figure 45: DLL Disable Mode to DLL Enable Mode
T0 CK# CK CKE tDLLK Command 7 ODTL off + 1 x tCK tCKESR ODT10 NOP SRE1 NOP tCKSRE 8 tCKSRX9 SRX2 tXS MRS3 tMRD MRS4 tMRD MRS5 Valid6 Valid Ta0 Ta1 Tb0 Tc0 Tc1 Td0 Te0 Tf0 Tg0 Th0
Indicates A Break in Time Scale
Don't Care
Notes:
1. 2. 3. 4. 5. 6. 7. 8. 9. 10.
Enter SELF REFRESH. Exit SELF REFRESH. Wait tXS, then set MR1[0] to "0" to enable DLL. Wait tMRD, then set MR0[8] to "1" to begin DLL RESET. Wait tMRD, update registers (CL, CWL, and write recovery may be necessary). Wait tMOD, any valid command. Starting with the idle state. Change frequency. Clock must be stable at least tCKSRX. Static LOW in case RTT_NOM or RTT_WR is enabled; otherwise, static LOW or HIGH.
The clock frequency range for the DLL disable mode is specified by the parameter t CKDLL_DIS. Due to latency counter and timing restrictions, only CL = 6 and CWL = 6 are supported. DLL disable mode will affect the read data clock to data strobe relationship (tDQSCK) but not the data strobe to data relationship (tDQSQ, tQH). Special attention is needed to line up read data to the controller time domain. Compared to the DLL on mode where tDQSCK starts from the rising clock edge AL + CL cycles after the READ command, the DLL disable mode tDQSCK starts AL + CL - 1 cycles after the READ command (see Figure 46 on page 99). WRITE operations function similarly between the DLL enable and DLL disable modes; however, ODT functionality is not allowed with DLL disable mode.
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1Gb: x4, x8, x16 DDR3 SDRAM Commands
Figure 46: DLL Disable tDQSCK Timing
T0 CK# CK Command READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
Address
Valid RL = AL + CL = 6 (CL = 6, AL = 0) CL = 6
DQS, DQS# DLL on DQ BL8 DLL on RL (DLL disable) = AL + (CL - 1) = 5 tDQSCK (DLL_DIS) MIN DQS, DQS# DLL off DQ BL8 DLL disable DI b DI b+1 DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7 DI b DI b+1 DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7
tDQSCK (DLL_DIS) MAX DQS, DQS# DLL off DQ BL8 DLL disable DI b DI b+1 DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7
Transitioning Data
Don't Care
Table 66:
READ Electrical Characteristics, DLL Disable Mode
Parameter Access window of DQS from CK, CK# Symbol
tDQSCK
Min 1
Max 10
Units ns
(DLL_DIS)
Input Clock Frequency Change
When the DDR3 SDRAM is initialized, it requires the clock to be stable during most normal states of operation. This means that after the clock frequency has been set to the stable state, the clock period is not allowed to deviate except what is allowed for by the clock jitter and spread spectrum clocking (SSC) specifications. The input clock frequency can be changed from one stable clock rate to another under two conditions: self refresh mode and precharge power-down mode. Outside of these two modes, it is illegal to change the clock frequency. For the self refresh mode condition, when the DDR3 SDRAM has been successfully placed into self refresh mode and t CKSRE has been satisfied, the state of the clock becomes a "Don't Care." When the clock becomes a "Don't Care," changing the clock frequency is permissible, provided the new clock frequency is stable prior to tCKSRX. When entering and exiting self refresh mode for the sole purpose of changing the clock frequency, the self refresh entry and exit specifications must still be met. The precharge power-down mode condition is when the DDR3 SDRAM is in precharge power-down mode (either fast exit mode or slow exit mode). Either ODT must be at a logic LOW or RTT_NOM and RTT_WR must be disabled via MR1 and MR2. This ensures RTT_NOM and RTT_WR are in an off state prior to entering precharge power-down mode, and CKE must be at a logic LOW. A minimum of tCKSRE must occur after CKE goes LOW before the clock frequency can change. The DDR3 SDRAM input clock frequency is allowed to change only within the minimum and maximum operating frequency specified for the particular speed grade (tCK [AVG] MIN to tCK [AVG] MAX). During the input clock frequency change, CKE must be held at a stable LOW level. When the input clock frequency is changed, a stable clock must be provided to the DRAM tCKSRX before precharge power-down may be exited. After precharge power-down is exited and tXP has
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1Gb: x4, x8, x16 DDR3 SDRAM Commands
been satisfied, the DLL must be reset via the MRS. Depending on the new clock frequency, additional MRS commands may need to be issued. During the DLL lock time, RTT_NOM and RTT_WR must remain in an off state. After the DLL lock time, the DRAM is ready to operate with a new clock frequency. This process is depicted in Figure 47. Figure 47: Change Frequency During Precharge Power-Down
Previous clock frequency T0 CK# CK tCH tCK tCKSRE tIH CKE tCPDED Command NOP NOP NOP tIS tCKE tIH tIS NOP tCKSRX tCL tCH
b
New clock frequency Ta0 Tb0 Tc0 Tc1 Td0 Td1 Te0 Te1
T1
T2
tCL b
tCH b tCK b
tCL b
tCH b
tCL b
tCK b
tCK b
NOP
MRS
NOP
Valid
Address
DLL RESET
Valid
tAOFPD/tAOF ODT
tXP
tIH
tIS
DQS, DQS# DQ DM
High-Z High-Z
tDLLK Enter precharge power-down mode Frequency change Exit precharge power-down mode Indicates A Break in Time Scale
Don't Care
Notes:
1. Applicable for both slow-exit and fast-exit precharge power-down modes. 2. tAOFPD and tAOF must be satisfied and outputs High-Z prior to T1 (see "On-Die Termination (ODT)" on page 160 for exact requirements). 3. If the RTT_NOM feature was enabled in the mode register prior to entering precharge power-down mode, the ODT signal must be continuously registered LOW ensuring RTT is in an off state. If the RTT_NOM feature was disabled in the mode register prior to entering precharge power-down mode, RTT will remain in the off state. The ODT signal can be registered either LOW or HIGH in this case.
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1Gb: x4, x8, x16 DDR3 SDRAM Commands Write Leveling
For better signal integrity, DDR3 SDRAM memory modules adopted fly-by topology for the commands, addresses, control signals, and clocks. Write leveling is a scheme for the memory controller to adjust or deskew the DQS strobe (DQS, DQS#) to CK relationship at the DRAM with a simple feedback feature provided by the DRAM. Write leveling is generally used as part of the initialization process, if required. For normal DRAM operation, this feature must be disabled. This is the only DRAM operation where the DQS functions as an input (to capture the incoming clock) and the DQ function as outputs (to report the state of the clock). Note that nonstandard ODT schemes are required. The memory controller using the write leveling procedure must have adjustable delay settings on its DQS strobe to align the rising edge of DQS to the clock at the DRAM pins. This is accomplished when the DRAM asynchronously feeds back the CK status via the DQ bus and samples with the rising edge of DQS. The controller repeatedly delays the DQS strobe until a CK transition from "0" to "1" is detected. The DQS delay established through this procedure helps ensure tDQSS, tDSS, and tDSH specifications in systems that use fly-by topology by deskewing the trace length mismatch. A conceptual timing of this procedure is shown in Figure 48. Figure 48: Write Leveling Concept
T0 CK# CK T1 T2 T3 T4 T5 T6 T7
Source
Differential DQS
Tn CK# CK
T0
T1
T2
T3
T4
T5
T6
Destination
Differential DQS
DQ
0
0
Destination
CK# CK
Tn
T0
T1
T2
T3
T4
T5
T6
Push DQS to capture 0-1 transition Differential DQS
DQ
1
1
Don't Care
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1Gb: x4, x8, x16 DDR3 SDRAM Commands
When write leveling is enabled, the rising edge of DQS samples CK, and the prime DQ outputs the sampled CK's status. The prime DQ for a x4 or x8 configuration is DQ0 with all other DQ (DQ[7:1]) driving LOW. The prime DQ for a x16 configuration is DQ0 for the lower byte and DQ8 for the upper byte. It outputs the status of CK sampled by LDQS and UDQS. All other DQ (DQ[7:1], DQ[15:9]) continue to drive LOW. Two prime DQ on a x16 enable each byte lane to be leveled independently. The write leveling mode register interacts with other mode registers to correctly configure the write leveling functionality. Besides using MR1[7] to disable/enable write leveling, MR1[12] must be used to enable/disable the output buffers. The ODT value, burst length, and so forth need to be selected as well. This interaction is shown in Table 67. It should also be noted that when the outputs are enabled during write leveling mode, the DQS buffers are set as inputs, and the DQ are set as outputs. Additionally, during write leveling mode, only the DQS strobe terminations are activated and deactivated via the ODT ball. The DQ remain disabled and are not affected by the ODT ball (see Table 67). Table 67: Write Leveling Matrix
Note 1 applies to the entire table MR1[7] Write Leveling Disabled Enabled (1) Disabled (1) MR1[12] Output Buffers MR1[3, 6, 9] RTT_NOM Value n/a DRAM ODT Ball Low DRAM RTT_NOM DQS Off DQ Off DRAM State Write leveling not enabled DQS not receiving: not terminated Prime DQ High-Z: not terminated Other DQ High-Z: not terminated DQS not receiving: terminated by RTT Prime DQ High-Z: not terminated Other DQ High-Z: not terminated DQS receiving: not terminated Prime DQ driving CK state: not terminated Other DQ driving LOW: not terminated DQS receiving: terminated by RTT Prime DQ driving CK state: not terminated Other DQ driving LOW: not terminated Case Notes 0 1 2
See normal operations
20, 30, 40, 60, or 120 Enabled (0) n/a
High
On
2
Low
Off
3
3
40, 60, or 120 Notes:
High
On
4
1. Expected usage if used during write leveling: Case 1 may be used when DRAM are on a dual-rank module and on the rank not being levelized or on any rank of a module not being levelized on a multislotted system. Case 2 may be used when DRAM are on any rank of a module not being levelized on a multislotted system. Case 3 is generally not used. Case 4 is generally used when DRAM are on the rank that is being leveled. 2. Since the DRAM DQS is not being driven (MR1[12] = 1), DQS ignores the input strobe, and all RTT_NOM values are allowed. This simulates a normal standby state to DQS. 3. Since the DRAM DQS is being driven (MR1[12] = 0), DQS captures the input strobe, and only some RTT_NOM values are allowed. This simulates a normal write state to DQS.
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1Gb: x4, x8, x16 DDR3 SDRAM Commands
Write Leveling Procedure A memory controller initiates the DRAM write leveling mode by setting MR1[7] to a "1," assuming the other programable features (MR0, MR1, MR2, and MR3) are first set and the DLL is fully reset and locked. The DQ balls enter the write leveling mode going from a High-Z state to an undefined driving state, so the DQ bus should not be driven. During write leveling mode, only the NOP or DES commands are allowed. The memory controller should attempt to level only one rank at a time; thus, the outputs of other ranks should be disabled by setting MR1[12] to a "1" in the other ranks. The memory controller may assert ODT after a tMOD delay as the DRAM will be ready to process the ODT transition. ODT should be turned on prior to DQS being driven LOW by at least ODTL on delay (WL - 2 tCK), provided it does not violate the aforementioned tMOD delay requirement. The memory controller may drive DQS LOW and DQS# HIGH after tWLDQSEN has been satisfied. The controller may begin to toggle DQS after tWLMRD (one DQS toggle is DQS transitioning from a LOW state to a HIGH state with DQS# transitioning from a HIGH state to a LOW state, then both transition back to their original states). At a minimum, ODTL on and tAON must be satisfied at least one clock prior to DQS toggling. After tWLMRD and a DQS LOW preamble (tWPRE) have been satisfied, the memory controller may provide either a single DQS toggle or multiple DQS toggles to sample CK for a given DQS-to-CK skew. Each DQS toggle must not violate tDQSL (MIN) and t DQSH (MIN) specifications. tDQSL (MAX) and tDQSH (MAX) specifications are not applicable during write leveling mode. The DQS must be able to distinguish the CK's rising edge within tWLS and tWLH. The prime DQ will output the CK's status asynchronously from the associated DQS rising edge CK capture within tWLO. The remaining DQ that always drive LOW when DQS is toggling must be LOW within tWLOE after the first tWLO is satisfied (the prime DQ going LOW). As previously noted, DQS is an input and not an output during this process. Figure 49 on page 104 depicts the basic timing parameters for the overall write leveling procedure. The memory controller will likely sample each applicable prime DQ state and determine whether to increment or decrement its DQS delay setting. After the memory controller performs enough DQS toggles to detect the CK's "0-to-1" transition, the memory controller should lock the DQS delay setting for that DRAM. After locking the DQS setting, leveling for the rank will have been achieved, and the write leveling mode for the rank should be disabled or reprogrammed (if write leveling of another rank follows).
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1Gb: x4, x8, x16 DDR3 SDRAM Commands
Figure 49: Write Leveling Sequence
T1 tWLH CK# CK Command MRS1 NOP2 tMOD ODT tWLDQSEN Differential DQS4 tWLMRD Prime DQ5 tWLO Early remaining DQ tWLO Late remaining DQ
tWLOE
T2 tWLH tWLS
tWLS
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tDQSL3
tDQSH3
tDQSL3
tDQSH3
tWLO
tWLO
Indicates A Break in Time Scale
Undefined Driving Mode
Don't Care
Notes:
1. MRS: Load MR1 to enter write leveling mode. 2. NOP: NOP or DES. 3. DQS, DQS# needs to fulfill minimum pulse width requirements tDQSH (MIN) and tDQSL (MIN) as defined for regular writes. The maximum pulse width is system-dependent. 4. Differential DQS is the differential data strobe (DQS, DQS#). Timing reference points are the zero crossings. The solid line represents DQS; the dotted line represents DQS#. 5. DRAM drives leveling feedback on a prime DQ (DQ0 for x4 and x8). The remaining DQ are driven low and remain in this state throughout the leveling procedure.
Write Leveling Mode Exit Procedure After the DRAM are leveled, they must exit from write leveling mode before the normal mode can be used. Figure 50 on page 105 depicts a general procedure in exiting write leveling mode. After the last rising DQS (capturing a "1" at T0), the memory controller should stop driving the DQS signals after tWLO (MAX) delay plus enough delay to enable the memory controller to capture the applicable prime DQ state (at ~Tb0). The DQ balls become undefined when DQS no longer remains LOW, and they remain undefined until t MOD after the MRS command (at Te1). The ODT input should be deasserted LOW such that ODTL off (MIN) expires after the DQS is no longer driving LOW. When ODT LOW satisfies tIS, ODT must be kept LOW (at ~Tb0) until the DRAM is ready for either another rank to be leveled or until the normal mode can be used. After DQS termination is switched off, write level mode should be disabled via the MRS command (at Tc2). After tMOD is satisfied (at Te1), any valid command may be registered by the DRAM. Some MRS commands may be issued after t MRD (at Td1).
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1Gb: x4, x8, x16 DDR3 SDRAM Commands
Figure 50: Exit Write Leveling
T0 CK# CK Command NOP NOP NOP NOP NOP NOP NOP MRS NOP tMRD Valid NOP Valid T1 T2 Ta0 Tb0 Tc0 Tc1 Tc2 Td0 Td1 Te0 Te1
Address
tIS
MR1
Valid tMOD
Valid
ODT ODTL off RTT DQS, RTT DQS# DQS, DQS# RTT_DQ tWLO + tWLOE DQ CK = 1 RTT_NOM tAOF (MAX) tAOF (MIN)
Indicates A Break in Time Scale
Undefined Driving Mode
Transitioning
Don't Care
Notes:
1. The DQ result, "= 1," between Ta0 and Tc0, is a result of the DQS, DQS# signals capturing CK HIGH just after the T0 state.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Operations
Initialization
The following sequence is required for power up and initialization, as shown in Figure 51 on page 107: 1. Apply power. RESET# is recommended to be below 0.2 x VDDQ during power ramp to ensure the outputs remain disabled (High-Z) and ODT off (RTT is also High-Z). All other inputs, including ODT, may be undefined. During power up, either of the following conditions may exist and must be met: * Condition A: - VDD and VDDQ are driven from a single-power converter output and are ramped with a maximum delta voltage between them of V 300mV. Slope reversal of any power supply signal is allowed. The voltage levels on all balls other than VDD, VDDQ, VSS, VSSQ must be less than or equal to VDDQ and VDD on one side, and must be greater than or equal to VSSQ and VSS on the other side. - Both VDD and VDDQ power supplies ramp to VDD (MIN) and VDDQ (MIN) within t VDDPR = 200ms. - VREFDQ tracks VDD x 0.5, VREFCA tracks VDD x 0.5. - VTT is limited to 0.95V when the power ramp is complete and is not applied directly to the device; however, tVTD should be greater than or equal to zero to avoid device latchup. * Condition B: - VDD may be applied before or at the same time as VDDQ. - VDDQ may be applied before or at the same time as VTT, VREFDQ, and VREFCA. - No slope reversals are allowed in the power supply ramp for this condition. 2. Until stable power, maintain RESET# LOW to ensure the outputs remain disabled (High-Z). After the power is stable, RESET# must be LOW for at least 200s to begin the initialization process. ODT will remain in the High-Z state while RESET# is LOW and until CKE is registered HIGH. 3. CKE must be LOW 10ns prior to RESET# transitioning HIGH. 4. After RESET# transitions HIGH, wait 500s (minus one clock) with CKE LOW. 5. After this CKE LOW time, CKE may be brought HIGH (synchronously) and only NOP or DES commands may be issued. The clock must be present and valid for at least 10ns (and a minimum of five clocks) and ODT must be driven LOW at least tIS prior to CKE being registered HIGH. When CKE is registered HIGH, it must be continuously registered HIGH until the full initialization process is complete. 6. After CKE is registered HIGH and after tXPR has been satisfied, MRS commands may be issued. Issue an MRS (LOAD MODE) command to MR2 with the applicable settings (provide LOW to BA2 and BA0 and HIGH to BA1). 7. Issue an MRS command to MR3 with the applicable settings. 8. Issue an MRS command to MR1 with the applicable settings, including enabling the DLL and configuring ODT. 9. Issue an MRS command to MR0 with the applicable settings, including a DLL RESET command. tDLLK (512) cycles of clock input are required to lock the DLL. 10. Issue a ZQCL command to calibrate RTT and RON values for the process voltage temperature (PVT). Prior to normal operation, tZQINIT must be satisfied. 11. When tDLLK and tZQINIT have been satisfied, the DDR3 SDRAM will be ready for normal operation.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 51: Initialization Sequence
T (MAX) = 200ms VDD VDDQ VTT VREF Power-up ramp tVTD CK# CK tCKSRX tIOz = 20ns RESET# T (MIN) = 10ns CKE tIS Valid tCL tCL Stable and valid clock T0 tCK T1 Ta0 Tb0 Tc0 Td0 See power-up conditions in the initialization sequence text, set up 1
ODT tIS Command NOP MRS MRS MRS MRS ZQCL
Valid
Valid
DM
Address
Code
Code
Code
Code
Valid
A10
Code
Code
Code
Code
A10 = H
Valid
BA[2:0]
BA0 = L BA1 = H BA2 = L
BA0 = H BA1 = H BA2 = L
BA0 = H BA1 = L BA2 = L
BA0 = L BA1 = L BA2 = L
Valid
DQS DQ
RTT
T = 200s (MIN)
T = 500s (MIN)
tXPR
tMRD
tMRD
tMRD
tMOD
tZQINIT
MR2 All voltage supplies valid and stable
MR3
MR1 with DLL enable
MR0 with DLL reset
ZQ calibration tDLLK Normal operation
DRAM ready for external commands
Indicates A Break in Time Scale
Don't Care
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1Gb: x4, x8, x16 DDR3 SDRAM Operations Mode Registers
Mode registers (MR0-MR3) are used to define various modes of programmable operations of the DDR3 SDRAM. A mode register is programmed via the MODE REGISTER SET (MRS) command during initialization, and it retains the stored information (except for MR0[8] which is self-clearing) until it is either reprogrammed, RESET# goes LOW, or until the device loses power. Contents of a mode register can be altered by reexecuting the MRS command. If the user chooses to modify only a subset of the mode register's variables, all variables must be programmed when the MRS command is issued. Reprogramming the mode register will not alter the contents of the memory array, provided it is performed correctly. The MRS command can only be issued (or reissued) when all banks are idle and in the precharged state (tRP is satisfied and no data bursts are in progress). After an MRS command has been issued, two parameters must be satisfied: tMRD and tMOD. The controller must wait tMRD before initiating any subsequent MRS commands (see Figure 52). Figure 52: MRS-to-MRS Command Timing (tMRD)
T0 CK# CK Command MRS1 NOP NOP tMRD Address Valid Valid NOP NOP MRS2 T1 T2 Ta0 Ta1 Ta2
CKE3
Indicates A Break in Time Scale
Don't Care
Notes:
1. Prior to issuing the MRS command, all banks must be idle and precharged, tRP (MIN) must be satisfied, and no data bursts can be in progress. 2. tMRD specifies the MRS-to-MRS command minimum cycle time. 3. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN) (see "PowerDown Mode" on page 151). 4. For a CAS latency change, tXPDLL timing must be met before any nonMRS command.
The controller must also wait tMOD before initiating any nonMRS commands (excluding NOP and DES), as shown in Figure 53 on page 109. The DRAM requires tMOD in order to update the requested features, with the exception of DLL RESET, which requires additional time. Until tMOD has been satisfied, the updated features are to be assumed unavailable.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 53: MRS-to-nonMRS Command Timing (tMOD)
T0 CK# CK Command MRS NOP NOP tMOD Address Valid Valid NOP NOP non MRS T1 T2 Ta0 Ta1 Ta2
CKE
Old setting
Valid
New setting
Updating setting
Indicates A Break in Time Scale
Don't Care
Notes:
1. Prior to issuing the MRS command, all banks must be idle (they must be precharged, tRP must be satisfied, and no data bursts can be in progress). 2. Prior to Ta2 when tMOD (MIN) is being satisfied, no commands (except NOP/DES) may be issued. 3. If RTT was previously enabled, ODT must be registered LOW at T0 so that ODTL is satisfied prior to Ta1. ODT must also be registered LOW at each rising CK edge from T0 until tMOD (MIN) is satisfied at Ta2. 4. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN), at which time power-down may occur (see "Power-Down Mode" on page 151).
Mode Register 0 (MR0)
The base register, MR0, is used to define various DDR3 SDRAM modes of operation. These definitions include the selection of a burst length, burst type, CAS latency, operating mode, DLL RESET, write recovery, and precharge power-down mode, as shown in Figure 54 on page 110. Burst Length Burst length is defined by MR0[1: 0] (see Figure 54 on page 110). Read and write accesses to the DDR3 SDRAM are burst-oriented, with the burst length being programmable to "4" (chop mode), "8" (fixed), or selectable using A12 during a READ/WRITE command (on-the-fly). The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. When MR0[1:0] is set to "01" during a READ/WRITE command, if A12 = 0, then BC4 (chop) mode is selected. If A12 = 1, then BL8 mode is selected. Specific timing diagrams, and turnaround between READ/WRITE, are shown in the READ/WRITE sections of this document. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst will wrap within the block if a boundary is reached. The block is uniquely selected by A[i:2] when the burst length is set to "4" and by A[i:3] when the burst length is set to "8" (where Ai is the most significant column address bit for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. The programmed burst length applies to both READ and WRITE bursts.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 54: Mode Register 0 (MR0) Definitions
BA2 BA1 BA0 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus
01 M15 M14 0 0 1 1 0 1 0 1 Mode Register Mode register 0 (MR0) Mode register 1 (MR1) Mode register 2 (MR2) Mode register 3 (MR3)
16 15 14 13 12 11 10 0 0 01 PD WR
9
8765432 DLL 01 CAS# latency BT 01
10 BL
Mode register 0 (MR0) M1 M0 0 0 1 0 1 Burst Length Fixed BL8 4 or 8 (on-the-fly via A12) Fixed BC4 (chop) Reserved
M12 0 1
Precharge PD DLL off (slow exit) DLL on (fast exit)
M8 DLL Reset 0 1 No Yes M6 M5 M4 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 CAS Latency Reserved 5 6 7 8 9 10 11 (DDR3-1600) M3 0 1
0 1 1
M11 M10 M9 Write Recovery 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 Reserved 5 6 7 8 10 12 Reserved
READ Burst Type Sequential (nibble) Interleaved
Notes:
1. MR0[16, 13, 7, 2] are reserved for future use and must be programmed to "0."
Burst Type Accesses within a given burst may be programmed to either a sequential or an interleaved order. The burst type is selected via MR0[3], as shown in Figure 54. The ordering of accesses within a burst is determined by the burst length, the burst type, and the starting column address, as shown in Table 68 on page 111. DDR3 only supports 4-bit burst chop and 8-bit burst access modes. Full interleave address ordering is supported for READs, while WRITEs are restricted to nibble (BC4) or word (BL8) boundaries.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Table 68:
Burst Length 4 chop
Burst Order
READ/ WRITE READ Starting Column Address (A[2, 1, 0]) 000 001 010 011 100 101 110 111 WRITE 0VV 1VV 000 001 010 011 100 101 110 111 WRITE Notes: VVV Burst Type = Sequential (Decimal) 0, 1, 2, 3, Z, Z, Z, Z 1, 2, 3, 0, Z, Z, Z, Z 2, 3, 0, 1, Z, Z, Z, Z 3, 0, 1, 2, Z, Z, Z, Z 4, 5, 6, 7, Z, Z, Z, Z 5, 6, 7, 4, Z, Z, Z, Z 6, 7, 4, 5, Z, Z, Z, Z 7, 4, 5, 6, Z, Z, Z, Z 0, 1, 2, 3, X, X, X, X 4, 5, 6, 7, X, X, X, X 0, 1, 2, 3, 4, 5, 6, 7 1, 2, 3, 0, 5, 6, 7, 4 2, 3, 0, 1, 6, 7, 4, 5 3, 0, 1, 2, 7, 4, 5, 6 4, 5, 6, 7, 0, 1, 2, 3 5, 6, 7, 4, 1, 2, 3, 0 6, 7, 4, 5, 2, 3, 0, 1 7, 4, 5, 6, 3, 0, 1, 2 0, 1, 2, 3, 4, 5, 6, 7 Burst Type = Interleaved (Decimal) 0, 1, 2, 3, Z, Z, Z, Z 1, 0, 3, 2, Z, Z, Z, Z 2, 3, 0, 1, Z, Z, Z, Z 3, 2, 1, 0, Z, Z, Z, Z 4, 5, 6, 7, Z, Z, Z, Z 5, 4, 7, 6, Z, Z, Z, Z 6, 7, 4, 5, Z, Z, Z, Z 7, 6, 5, 4, Z, Z, Z, Z 0, 1, 2, 3, X, X, X, X 4, 5, 6, 7, X, X, X, X 0, 1, 2, 3, 4, 5, 6, 7 1, 0, 3, 2, 5, 4, 7, 6 2, 3, 0, 1, 6, 7, 4, 5 3, 2, 1, 0, 7, 6, 5, 4 4, 5, 6, 7, 0, 1, 2, 3 5, 4, 7, 6, 1, 0, 3, 2 6, 7, 4, 5, 2, 3, 0, 1 7, 6, 5, 4, 3, 2, 1, 0 0, 1, 2, 3, 4, 5, 6, 7
Notes 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 3, 4 1, 3, 4 1 1 1 1 1 1 1 1 1, 3
8
READ
1. Internal READ and WRITE operations start at the same point in time for BC4 as they do for BL8. 2. Z = Data and strobe output drivers are in tri-state. 3. V = A valid logic level (0 or 1), but the respective input buffer ignores level-on input pins. 4. X = "Don't Care."
DLL RESET DLL RESET is defined by MR0[8] (see Figure 54 on page 110). Programming MR0[8] to "1" activates the DLL RESET function. MR0[8] is self-clearing, meaning it returns to a value of "0" after the DLL RESET function has been initiated. Anytime the DLL RESET function is initiated, CKE must be HIGH and the clock held stable for 512 (tDLLK) clock cycles before a READ command can be issued. This is to allow time for the internal clock to be synchronized with the external clock. Failing to wait for synchronization to occur may result in invalid output timing specifications, such as tDQSCK timings. Write Recovery WRITE recovery time is defined by MR0[11:9] (see Figure 54 on page 110). Write recovery values of 5, 6, 7, 8, 10, or 12 may be used by programming MR0[11:9]. The user is required to program the correct value of write recovery and is calculated by dividing tWR (ns) by tCK (ns) and rounding up a noninteger value to the next integer: WR (cycles) = roundup (tWR [ns]/tCK [ns]).
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Precharge Power-Down (Precharge PD) The precharge PD bit applies only when precharge power-down mode is being used. When MR0[12] is set to "0," the DLL is off during precharge power-down providing a lower standby current mode; however, tXPDLL must be satisfied when exiting. When MR0[12] is set to "1," the DLL continues to run during precharge power-down mode to enable a faster exit of precharge power-down mode; however, tXP must be satisfied when exiting (see "Power-Down Mode" on page 151). CAS Latency (CL) The CL is defined by MR0[6:4], as shown in Figure 54 on page 110. CAS latency is the delay, in clock cycles, between the internal READ command and the availability of the first bit of output data. The CL can be set to 5, 6, 7, 8, 9, or 10. DDR3 SDRAM do not support half-clock latencies. Examples of CL = 6 and CL = 8 are shown in Figure 55. If an internal READ command is registered at clock edge n, and the CAS latency is m clocks, the data will be available nominally coincident with clock edge n + m. Table 49 on page 63 through Table 51 on page 65 indicate the CLs supported at various operating frequencies. Figure 55: READ Latency
T0 CK# CK Command READ NOP NOP NOP AL = 0, CL = 6 DQS, DQS# DI n DI n+1 DI n+2 DI n+3 DI n+4 NOP NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 T8
DQ
T0 CK# CK Command READ
T1
T2
T3
T4
T5
T6
T7
T8
NOP
NOP
NOP
NOP AL = 0, CL = 8
NOP
NOP
NOP
NOP
DQS, DQS# DI n
DQ
Transitioning Data
Don't Care
Notes:
1. For illustration purposes, only CL = 6 and CL = 8 are shown. Other CL values are possible. 2. Shown with nominal tDQSCK and nominal tDSDQ.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations Mode Register 1 (MR1)
The mode register 1 (MR1) controls additional functions and features not available in the other mode registers: Q OFF (OUTPUT DISABLE), TDQS (for the x8 configuration only), DLL ENABLE/DLL DISABLE, RTT_NOM value (ODT), WRITE LEVELING, POSTED CAS ADDITIVE latency, and OUTPUT DRIVE STRENGTH. These functions are controlled via the bits shown in Figure 56. The MR1 register is programmed via the MRS command and retains the stored information until it is reprogrammed, until RESET# goes LOW, or until the device loses power. Reprogramming the MR1 register will not alter the contents of the memory array, provided it is performed correctly. The MR1 register must be loaded when all banks are idle and no bursts are in progress. The controller must satisfy the specified timing parameters tMRD and tMOD before initiating a subsequent operation. Figure 56: Mode Register 1 (MR1) Definition
BA2 BA1 BA0 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus
16 15 14 13 12 11 10 9 8 7 6 5 01 0 1 01 Q Off TDQS 01 RTT 01 WL RTT ODS M15 M14 0 0 1 1 0 1 0 1 Mode Register Mode register set 0 (MR0) Mode register set 1 (MR1) Mode register set 2 (MR2) Mode register set 3 (MR3) M9 M6 M2 000 001 011 101 110 111
M12 0 1 Q Off Enabled Disabled M11 0 1 TDQS Disabled Enabled
4 AL
3
2
1
0
Mode register 1 (MR1) M0 0 1 DLL Enable Enable (normal) Disable
RTT ODS DLL
M5 M1 Output Drive Strength RTT_NOM (ODT)3 Writes RTT_NOM disabled M7 Write Levelization 0 1 Disable (normal) Enable 0 0 1 1 0 1 0 1 RZQ/6 (40 [NOM]) RZQ/7 (34 [NOM]) Reserved Reserved
RTT_NOM (ODT)2 Non-Writes RTT_NOM disabled RZQ/4 (60 [NOM]) RZQ/6 (40 [NOM]) RZQ/8 (30 [NOM]) Reserved Reserved
RZQ/4 (60 [NOM]) RZQ/6 (40 [NOM]) n/a n/a Reserved Reserved
0 1 0 RZQ/2 (120 [NOM]) RZQ/2 (120 [NOM]) M4 M3 Additive Latency (AL) 0 0 1 1 0 1 0 1 Disabled (AL = 0) AL = CL - 1 AL = CL - 2 Reserved 1 0 0 RZQ/12 (20 [NOM])
Notes:
1. MR1[16, 13, 10, 8] are reserved for future use and must be programmed to "0." 2. During write leveling, if MR1[7] and MR1[12] are "1" then all RTT_NOM values are available for use. 3. During write leveling, if MR1[7] is a "1," but MR1[12] is a "0," then only RTT_NOM write values are available for use.
DLL Enable/DLL Disable The DLL may be enabled or disabled by programming MR1[0] during the LOAD MODE command, as shown in Figure 56. The DLL must be enabled for normal operation. DLL enable is required during power-up initialization and upon returning to normal operation after having disabled the DLL for the purpose of debugging or evaluation. Enabling the DLL should always be followed by resetting the DLL using the appropriate LOAD MODE command. If the DLL is enabled prior to entering self refresh mode, the DLL is automatically disabled when entering SELF REFRESH operation and is automatically reenabled and reset upon exit of SELF REFRESH operation. If the DLL is disabled prior to entering self refresh mode, the DLL remains disabled even upon exit of SELF REFRESH operation until it is reenabled and reset.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
The DRAM is not tested to check--nor does Micron warrant compliance with--normal mode timings or functionality when the DLL is disabled. An attempt has been made to have the DRAM operate in the normal mode where reasonably possible when the DLL has been disabled; however, by industry standard, a few known exceptions are defined: 1. ODT is not allowed to be used. 2. The output data is no longer edge-aligned to the clock. 3. CL and CWL can only be six clocks. When the DLL is disabled, timing and functionality can vary from the normal operation specifications when the DLL is enabled (see "DLL Disable Mode" on page 96). Disabling the DLL also implies the need to change the clock frequency (see "Input Clock Frequency Change" on page 99). Output Drive Strength The DDR3 SDRAM uses a programmable impedance output buffer. The drive strength mode register setting is defined by MR1[5, 1]. RZQ/7 (34 [NOM]) is the primary output driver impedance setting for DDR3 SDRAM devices. To calibrate the output driver impedance, an external precision resistor (RZQ) is connected between the ZQ ball and VSSQ. The value of the resistor must be 240 1 percent. The output impedance is set during initialization. Additional impedance calibration updates do not affect device operation, and all data sheet timings and current specifications are met during an update. To meet the 34 specification, the output drive strength must be set to 34 during initialization. To obtain a calibrated output driver impedance after power-up, the DDR3 SDRAM needs a calibration command that is part of the initialization and reset procedure. OUTPUT ENABLE/DISABLE The OUTPUT ENABLE function is defined by MR1[12], as shown in Figure 56 on page 113. When enabled (MR1[12] = 0), all outputs (DQ, DQS, DQS#) function when in the normal mode of operation. When disabled (MR1[12] = 1), all DDR3 SDRAM outputs (DQ and DQS, DQS#) are tri-stated. The output disable feature is intended to be used during IDD characterization of the READ current and during tDQSS margining (write leveling) only. TDQS Enable Termination data strobe (TDQS) is a feature of the x8 DDR3 SDRAM configuration, which provides termination resistance (RTT), that may be useful in some system configurations. TDQS is not supported in x4 or x16 configurations. When enabled via the mode register (MR1[11]), the RTT that is applied to DQS and DQS# is also applied to TDQS and TDQS#. In contrast to the RDQS function of DDR2 SDRAM, TDQS provides the termination resistance RTT only. The OUTPUT DATA STROBE function of RDQS is not provided by TDQS; thus, RON does not apply to TDQS and TDQS#. The TDQS and DM functions share the same ball. When the TDQS function is enabled via the mode register, the DM function is not supported. When the TDQS function is disabled, the DM function is provided, and the TDQS# ball is not used. The TDQS function is available in the x8 DDR3 SDRAM configuration only and must be disabled via the mode register for the x4 and x16 configurations.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
On-Die Termination ODT resistance RTT_NOM is defined by MR1[9, 6, 2] (see Figure 56 on page 113). The RTT termination value applies to the DQ, DM, DQS, DQS#, and TDQS, TDQS# balls. DDR3 supports multiple RTT termination values based on RZQ/n where n can be 2, 4, 6, 8, or 12 and RZQ is 240. Unlike DDR2, DDR3 ODT must be turned off prior to reading data out and must remain off during a READ burst. RTT_NOM termination is allowed any time after the DRAM is initialized, calibrated, and not performing read access, or when it is not in self refresh mode. Additionally, write accesses with dynamic ODT enabled (RTT_WR) temporarily replaces RTT_NOM with RTT_WR. The actual effective termination, RTT_EFF, may be different from the RTT targeted due to nonlinearity of the termination. For RTT_EFF values and calculations (see "On-Die Termination (ODT)" on page 160). The ODT feature is designed to improve signal integrity of the memory channel by enabling the DDR3 SDRAM controller to independently turn on/off ODT for any or all devices. The ODT input control pin is used to determine when RTT is turned on (ODTL on) and off (ODTL off ), assuming ODT has been enabled via MR1[9, 6, 2]. Timings for ODT are detailed in "On-Die Termination (ODT)" on page 160. WRITE LEVELING The WRITE LEVELING function is enabled by MR1[7], as shown in Figure 56 on page 113. Write leveling is used (during initialization) to deskew the DQS strobe to clock offset as a result of fly-by topology designs. For better signal integrity, DDR3 SDRAM memory modules adopted fly-by topology for the commands, addresses, control signals, and clocks. The fly-by topology benefits from a reduced number of stubs and their lengths. However, fly-by topology induces flight time skews between the clock and DQS strobe (and DQ) at each DRAM on the DIMM. Controllers will have a difficult time maintaining tDQSS, t DSS, and tDSH specifications without supporting write leveling in systems which use fly-by topology-based modules. Write leveling timing and detailed operation information is provided in "Write Leveling" on page 101. POSTED CAS ADDITIVE Latency (AL) AL is supported to make the command and data bus efficient for sustainable bandwidths in DDR3 SDRAM. MR1[4, 3] define the value of AL as shown in Figure 57 on page 116. MR1[4, 3] enable the user to program the DDR3 SDRAM with an AL = 0, CL - 1, or CL - 2. With this feature, the DDR3 SDRAM enables a READ or WRITE command to be issued after the ACTIVATE command for that bank prior to tRCD (MIN). The only restriction is ACTIVATE to READ or WRITE + AL tRCD (MIN) must be satisfied. Assuming tRCD (MIN) = CL, a typical application using this feature sets AL = CL - 1tCK = tRCD (MIN) - 1 tCK. The READ or WRITE command is held for the time of the AL before it is released internally to the DDR3 SDRAM device. READ latency (RL) is controlled by the sum of the AL and CAS latency (CL), RL = AL + CL. WRITE latency (WL) is the sum of CAS WRITE latency and AL, WL = AL + CWL (see "Mode Register 2 (MR2)" on page 116). Examples of READ and WRITE latencies are shown in Figure 57 on page 116 and Figure 59 on page 117.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 57: READ Latency (AL = 5, CL = 6)
BC4 T0 CK# CK Command ACTIVE n READ n tRCD (MIN) DQS, DQS# AL = 5 DQ RL = AL + CL = 11 CL = 6 DO n DO n+1 DO n+2 DO n+3 NOP NOP NOP NOP NOP NOP T1 T2 T6 T11 T12 T13 T14
Indicates A Break in Time Scale
Transitioning Data
Don't Care
Mode Register 2 (MR2)
The mode register 2 (MR2) controls additional functions and features not available in the other mode registers. These additional functions are CAS WRITE latency (CWL), AUTO SELF REFRESH (ASR), SELF REFRESH TEMPERATURE (SRT), and DYNAMIC ODT (RTT_WR). These functions are controlled via the bits shown in Figure 58. The MR2 is programmed via the MRS command and will retain the stored information until it is programmed again or until the device loses power. Reprogramming the MR2 register will not alter the contents of the memory array, provided it is performed correctly. The MR2 register must be loaded when all banks are idle and no data bursts are in progress, and the controller must wait the specified time tMRD and tMOD before initiating a subsequent operation. Figure 58: Mode Register 2 (MR2) Definition
BA2 BA1 BA0 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus
01 1
16 15 14 13 12 11 10 9 8 7 6 0 01 01 01 RTT_WR 01 SRT ASR
5
4 CWL
3
2
1
0
Mode register 2 (MR2)
01 01 01
M15 M14 0 0 1 1 0 1 0 1
Mode Register Mode register set 0 (MR0) Mode register set 1 (MR1) Mode register set 2 (MR2) Mode register set 3 (MR3)
M7 Self Refresh Temperature 0 1 Normal (0C to 85C) Extended (0C to 95C)
M5 M4 M3 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1
CAS Write Latency (CWL) 5 CK (tCK 2.5ns) 6 CK (2.5ns > tCK 1.875ns) 7 CK (1.875ns > tCK 1.5ns) 8 CK (1.5ns > tCK 1.25ns) Reserved Reserved Reserved Reserved
M10 M9 0 0 1 1 0 1 0 1
Dynamic ODT ( RTT_WR ) RTT_WR disabled RZQ/4 RZQ/2 Reserved
M6 0
Auto Self Refresh (Optional) Disabled: Manual
1 Enabled: Automatic
Notes:
1. MR2[16, 13:11, 8, and 2:0] are reserved for future use and must all be programmed to "0."
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
CAS Write Latency (CWL) CWL is defined by MR2[5:3] and is the delay, in clock cycles, from the releasing of the internal write to the latching of the first data in. CWL must be correctly set to the corresponding operating clock frequency (see Figure 58 on page 116). The overall WRITE latency (WL) is equal to CWL + AL (Figure 56 on page 113), as shown in Figure 59. Figure 59: CAS Write Latency
BC4 T0 CK# CK Command ACTIVE n WRITE n tRCD (MIN) DQS, DQS# AL = 5 DQ WL = AL + CWL = 11 CWL = 6 DI n DI n+1 DI n+2 DI n+3 NOP NOP NOP NOP NOP NOP T1 T2 T6 T11 T12 T13 T14
Indicates A Break in Time Scale
Transitioning Data
Don't Care
AUTO SELF REFRESH (ASR) Mode register MR2[6] is used to disable/enable the ASR function. When ASR is disabled, the self refresh mode's refresh rate is assumed to be at the normal 85C limit (sometimes referred to as 1X refresh rate). In the disabled mode, ASR requires the user to ensure the DRAM never exceeds a TC of 85C while in self refresh unless the user enables the SRT feature listed below when the TC is between 85C and 95C. Enabling ASR assumes the DRAM self refresh rate is changed automatically from 1X to 2X when the case temperature exceeds 85C. This enables the user to operate the DRAM beyond the standard 85C limit up to the optional extended temperature range of 95C while in self refresh mode. The standard self refresh current test specifies test conditions to normal case temperature (85C) only, meaning if ASR is enabled, the standard self refresh current specifications do not apply (see "Extended Temperature Usage" on page 150). SELF REFRESH TEMPERATURE (SRT) Mode register MR2[7] is used to disable/enable the SRT function. When SRT is disabled, the self refresh mode's refresh rate is assumed to be at the normal 85C limit (sometimes referred to as 1X refresh rate). In the disabled mode, SRT requires the user to ensure the DRAM never exceeds a TC of 85C while in self refresh mode unless the user enables ASR. When SRT is enabled, the DRAM self refresh is changed internally from 1X to 2X, regardless of the case temperature. This enables the user to operate the DRAM beyond the standard 85C limit up to the optional extended temperature range of 95C while in self refresh mode. The standard self refresh current test specifies test conditions to normal case temperature (85C) only, meaning if SRT is enabled, the standard self refresh current specifications do not apply (see "Extended Temperature Usage" on page 150).
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
SRT vs. ASR If the normal case temperature limit of 85C is not exceeded, then neither SRT nor ASR is required, and both can be disabled throughout operation. However, if the extended temperature option of 95C is needed, the user is required to provide a 2X refresh rate during (manual) refresh and to enable either the SRT or the ASR to ensure self refresh is performed at the 2X rate. SRT forces the DRAM to switch the internal self refresh rate from 1X to 2X. Self refresh is performed at the 2X refresh rate regardless of the case temperature. ASR automatically switches the DRAM's internal self refresh rate from 1X to 2X. However, while in self refresh mode, ASR enables the refresh rate to automatically adjust between 1X to 2X over the supported temperature range. One other disadvantage with ASR is the DRAM cannot always switch from a 1X to a 2X refresh rate at an exact case temperature of 85C. Although the DRAM will support data integrity when it switches from a 1X to a 2X refresh rate, it may switch at a lower temperature than 85C. Since only one mode is neccesary, SRT and ASR cannot be enabled at the same time. DYNAMIC ODT The dynamic ODT (RTT_WR) feature is defined by MR2[10, 9]. Dynamic ODT is enabled when a value is selected. This new DDR3 SDRAM feature enables the ODT termination value to change without issuing an MRS command, essentially changing the ODT termination "on-the-fly." With dynamic ODT (RTT_WR) enabled, the DRAM switches from normal ODT (RTT_NOM) to dynamic ODT (RTT_WR) when beginning a WRITE burst and subsequently switches back to ODT (RTT_NOM) at the completion of the WRITE burst. If RTT_NOM is disabled, the RTT_NOM value will be High-Z. Special timing parameters must be adhered to when dynamic ODT (RTT_WR) is enabled: ODTLCNW, ODTLCNW4, ODTLCNW8, ODTH4, ODTH8, and tADC. Dynamic ODT is only applicable during WRITE cycles. If ODT (RTT_NOM) is disabled, dynamic ODT (RTT_WR) is still permitted. RTT_NOM and RTT_WR can be used independent of one other. Dynamic ODT is not available during write leveling mode, regardless of the state of ODT (RTT_NOM). For details on dynamic ODT operation, refer to "On-Die Termination (ODT)" on page 160.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations Mode Register 3 (MR3)
The mode register 3 (MR3) controls additional functions and features not available in the other mode registers. Currently defined is the MULTIPURPOSE REGISTER (MPR). This function is controlled via the bits shown in Figure 60. The MR3 is programmed via the LOAD MODE command and retains the stored information until it is programmed again or until the device loses power. Reprogramming the MR3 register will not alter the contents of the memory array, provided it is performed correctly. The MR3 register must be loaded when all banks are idle and no data bursts are in progress, and the controller must wait the specified time tMRD and tMOD before initiating a subsequent operation. Figure 60: Mode Register 3 (MR3) Definition
BA2 BA1 BA0 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus
16 01
15 14 13 12 11 10 9 87 6 54 32 10 1 1 01 01 01 01 01 01 01 01 01 01 01 MPR MPR_RF
Mode register 3 (MR3)
M15 M14 0 0 1 1 0 1 0 1
Mode Register Mode register set (MR0) Mode register set 1 (MR1) Mode register set 2 (MR2) Mode register set 3 (MR3)
M2 0 1
MPR Enable Normal DRAM operations2 Dataflow from MPR
M1 M0 0 0 1 1 0 1 0 1
MPR READ Function Predefined pattern3 Reserved Reserved Reserved
Notes:
1. MR3[16 and 13:4] are reserved for future use and must all be programmed to "0." 2. When MPR control is set for normal DRAM operation, MR3[1, 0] will be ignored. 3. Intended to be used for READ synchronization.
MULTIPURPOSE REGISTER (MPR) The MULTIPURPOSE REGISTER function is used to output a predefined system timing calibration bit sequence. Bit 2 is the master bit that enables or disables access to the MPR register, and bits 1 and 0 determine which mode the MPR is placed in. The basic concept of the multipurpose register is shown in Figure 61 on page 120. If MR3[2] is a "0," then the MPR access is disabled, and the DRAM operates in normal mode. However, if MR3[2] is a "1," then the DRAM no longer outputs normal read data but outputs MPR data as defined by MR3[0, 1]. If MR3[0, 1] is equal to "00," then a predefined read pattern for system calibration is selected. To enable the MPR, the MRS command is issued to MR3, and MR3[2] = 1 (see Table 69 on page 120). Prior to issuing the MRS command, all banks must be in the idle state (all banks are precharged, and tRP is met). When the MPR is enabled, any subsequent READ or RDAP commands are redirected to the multipurpose register. The resulting operation when either a READ or a RDAP command is issued, is defined by MR3[1:0] when the MPR is enabled (see Table 70 on page 121). When the MPR is enabled, only READ or RDAP commands are allowed until a subsequent MRS command is issued with the MPR disabled (MR3[2] = 0). Power-down mode, self refresh, and any other nonREAD/RDAP command is not allowed during MPR enable mode. The RESET function is supported during MPR enable mode.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 61: Multipurpose Register (MPR) Block Diagram
Memory core
MR3[2] = 0 (MPR off)
Multipurpose register predefined data for READs MR3[2] = 1 (MPR on) DQ, DM, DQS, DQS#
Notes: 1. A predefined data pattern can be read out of the MPR with an external READ command. 2. MR3[2] defines whether the data flow comes from the memory core or the MPR. When the data flow is defined, the MPR contents can be read out continuously with a regular READ or RDAP command.
Table 69:
MR3[2] MPR 0
MPR Functional Description of MR3 Bits
MR3[1:0] MPR READ Function "Don't Care" Function Normal operation, no MPR transaction All subsequent READs come from the DRAM memory array All subsequent WRITEs go to the DRAM memory array Enable MPR mode, subsequent READ/RDAP commands defined by bits 1 and 2
1
A[1:0] (see Table 70 on page 121)
MPR Functional Description The MPR is a 1-bit-wide logical interface via all DQ balls during a READ command. DQ0 on a x4 and a x8 is the prime DQ and outputs the MPR data while the remaining DQ are driven LOW. Similarly, for the x16, DQ0 (lower byte) and DQ8 (upper byte) are the prime DQ and output the MPR data while the remaining DQ drive LOW. The MPR readout supports fixed READ burst and READ burst chop (MRS and OTF via A12/BC#) with regular READ latencies and AC timings applicable, provided the DLL is locked as required. MPR addressing for a valid MPR read is as follows: * A[1:0] must be set to "00" as the burst order is fixed per nibble * A2 selects the burst order: - BL8, A2 is set to "0," and the burst order is fixed to 0, 1, 2, 3, 4, 5, 6, 7 * For burst chop 4 cases, the burst order is switched on the nibble base and: - A2 = 0; burst order = 0, 1, 2, 3 - A2 = 1; burst order = 4, 5, 6, 7 * Burst order bit 0 (the first bit) is assigned to LSB, and burst order bit 7 (the last bit) is assigned to MSB
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
* * * * * * A[9:3] are a "Don't Care" A10 is a "Don't Care" A11 is a "Don't Care" A12: Selects burst chop mode on-the-fly, if enabled within MR0 A13 is a "Don't Care" BA[2:0] are a "Don't Care"
MPR Register Address Definitions and Bursting Order The MPR currently supports a single data format. This data format is a predefined read pattern for system calibration. The predefined pattern is always a repeating 0-1 bit pattern. Examples of the different types of predefined READ pattern bursts are shown in Figure 62 on page 122, Figure 63 on page 123, Figure 64 on page 124, and Figure 65 on page 125. Table 70:
MR3[2] 1
MPR Readouts and Burst Order Bit Mapping
MR3[1:0] 00 Function READ predefined pattern for system calibration Burst Length BL8 BC4 BC4 Read A[2:0] 000 000 100 n/a n/a n/a n/a n/a n/a n/a n/a n/a Burst Order and Data Pattern Burst order: 0, 1, 2, 3, 4, 5, 6, 7 Predefined pattern: 0, 1, 0, 1, 0, 1, 0, 1 Burst order: 0, 1, 2, 3 Predefined pattern: 0, 1, 0, 1 Burst order: 4, 5, 6, 7 Predefined pattern: 0, 1, 0, 1 n/a n/a n/a n/a n/a n/a n/a n/a n/a
1
01
RFU
n/a n/a n/a
1
10
RFU
n/a n/a n/a
1
11
RFU
n/a n/a n/a
Notes:
1. Burst order bit 0 is assigned to LSB, and burst order bit 7 is assigned to MSB of the selected MPR agent.
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Figure 62: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout
T0 CK# CK Command PREA tRP Bank address 3 MRS tMOD Valid 02 02 Valid READ1 NOP NOP NOP NOP NOP NOP NOP NOP tMPRR 3 MRS NOP tMOD NOP Valid Ta0 Tb0 Tb1 Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10
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A[1:0]
0
Valid
A2
1
0
A[9:3]
00
00
A10/AP
1
0
Valid
0
A11
0
Valid Valid1 Valid RL
0
A12/BC#
0
0
A[15:13]
0
0
122
DQS, DQS# DQ
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Indicates A Break in Time Scale
Don't Care
1Gb: x4, x8, x16 DDR3 SDRAM Operations
Notes:
1. READ with BL8 either by MRS or OTF. 2. Memory controller must drive 0 on A[2:0].
Figure 63: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout
T0 CK# CK Command PREA tRP Bank address A[1:0] A2 A[9:3] A10/AP A11 A12/BC# A[15:13] 1 3 0 1 00 0 0 0 0 MRS tMOD Valid 02 02 Valid Valid Valid Valid Valid READ1 tCCD Valid 02 12 Valid Valid Valid Valid1 Valid RL DQS, DQS# RL DQ READ1 NOP NOP NOP NOP NOP NOP NOP NOP NOP tMPRR 3 Valid 0 00 0 0 0 0 MRS tMOD Valid Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10 Td
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Indicates A Break in Time Scale
Don't Care
1Gb: x4, x8, x16 DDR3 SDRAM Operations
Notes:
1. READ with BL8 either by MRS or OTF. 2. Memory controller must drive 0 on A[2:0].
Figure 64: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble
T0 CK# CK Command PREA tRF Bank address A[1:0] A2 A[9:3] A10/AP A11 A12/BC# A[15:13] 1 3 0 1 00 0 0 0 0 MRS tMOD Valid 02 03 Valid Valid Valid Valid1 Valid READ1 tCCD Valid 02 14 Valid Valid Valid Valid1 Valid RL READ1 NOP NOP NOP NOP NOP NOP NOP tMPRR 3 Valid 0 00 0 0 0 0 MRS NOP tMOD NOP Valid Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10 Td
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DQS, DQS# RL DQ
Indicates A Break in Time Scale
Don't Care
1Gb: x4, x8, x16 DDR3 SDRAM Operations
Notes:
1. 2. 3. 4.
READ with BC4 either by MRS or OTF. Memory controller must drive 0 on A[1:0]. A2 = 0 selects lower 4 nibble bits 0 . . . 3. A2 = 1 selects upper 4 nibble bits 4 . . . 7.
Figure 65: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble
T0 CK# CK Command PREA tRF Bank address A[1:0] A2 A[9:3] A10/AP A11 A12/BC# A[15:13] 1 3 0 1 00 0 0 0 0 MRS tMOD Valid 02 13 Valid Valid Valid Valid1 Valid READ1 tCCD Valid 02 04 Valid Valid Valid Valid1 Valid RL READ1 NOP NOP NOP NOP NOP NOP NOP tMPRR 3 Valid 0 00 0 0 0 0 MRS NOP tMOD NOP Valid Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10 Td
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DQS, DQS# RL DQ
Indicates A Break in Time Scale
Don't Care
1Gb: x4, x8, x16 DDR3 SDRAM Operations
Notes:
1. 2. 3. 4.
READ with BC4 either by MRS or OTF. Memory controller must drive 0 on A[1:0]. A2 = 1 selects upper 4 nibble bits 4 . . . 7. A2 = 0 selects lower 4 nibble bits 0 . . . 3.
1Gb: x4, x8, x16 DDR3 SDRAM Operations
MPR Read Predefined Pattern The predetermined read calibration pattern is a fixed pattern of 0, 1, 0, 1, 0, 1, 0, 1. The following is an example of using the read out predetermined read calibration pattern. The example is to perform multiple reads from the multipurpose register in order to do system level read timing calibration based on the predetermined and standardized pattern. The following protocol outlines the steps used to perform the read calibration: * Precharge all banks * After tRP is satisfied, set MRS, MR3[2] = 1 and MR3[1:0] = 00. This redirects all subsequent reads and loads the predefined pattern into the MPR. As soon as tMRD and t MOD are satisfied, the MPR is available * Data WRITE operations are not allowed until the MPR returns to the normal DRAM state * Issue a read with burst order information (all other address pins are "Don't Care"): - A[1:0] = 00 (data burst order is fixed starting at nibble) - A2 = 0 (for BL8, burst order is fixed as 0, 1, 2, 3, 4, 5, 6, 7) - A12 = 1 (use BL8) * After RL = AL + CL, the DRAM bursts out the predefined read calibration pattern (0, 1, 0, 1, 0, 1, 0, 1) * The memory controller repeats the calibration reads until read data capture at memory controller is optimized * After the last MPR READ burst and after tMPRR has been satisfied, issue MRS, MR3[2] = 0, and MR3[1:0] = "Don't Care" to the normal DRAM state. All subsequent read and write accesses will be regular reads and writes from/to the DRAM array * When tMRD and tMOD are satisfied from the last MRS, the regular DRAM commands (such as activate a memory bank for regular read or write access) are permitted
MODE REGISTER SET (MRS)
The mode registers are loaded via inputs BA[2:0], A[13:0]. BA[2:0] determine which mode register is programmed: * BA2 = 0, BA1 = 0, BA0 = 0 for MR0 * BA2 = 0, BA1 = 0, BA0 = 1 for MR1 * BA2 = 0, BA1 = 1, BA0 = 0 for MR2 * BA2 = 0, BA1 = 1, BA0 = 1 for MR3 The MRS command can only be issued (or reissued) when all banks are idle and in the precharged state (tRP is satisfied and no data bursts are in progress). The controller must wait the specified time tMRD before initiating a subsequent operation such as an ACTIVATE command (see Figure 52 on page 108). There is also a restriction after issuing an MRS command with regard to when the updated functions become available. This parameter is specified by tMOD. Both tMRD and tMOD parameters are shown in Figure 52 on page 108 and Figure 53 on page 109. Violating either of these requirements will result in unspecified operation.
ZQ CALIBRATION
The ZQ CALIBRATION command is used to calibrate the DRAM output drivers (RON) and ODT values (RTT) over process, voltage, and temperature, provided a dedicated 240 (1 percent) external resistor is connected from the DRAM's ZQ ball to VSSQ.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
DDR3 SDRAM need a longer time to calibrate RON and ODT at power-up initialization and self refresh exit and a relatively shorter time to perform periodic calibrations. DDR3 SDRAM defines two ZQ CALIBRATION commands: ZQ CALIBRATION LONG (ZQCL) and ZQ CALIBRATION SHORT (ZQCS). An example of ZQ calibration timing is shown in Figure 66. All banks must be precharged and tRP must be met before ZQCL or ZQCS commands can be issued to the DRAM. No other activities (other than another ZQCL or ZQCS command may be issued to another DRAM) can be performed on the DRAM channel by the controller for the duration of tZQINIT or tZQOPER . The quiet time on the DRAM channel helps accurately calibrate RON and ODT. After DRAM calibration is achieved, the DRAM should disable the ZQ ball's current consumption path to reduce power. ZQ CALIBRATION commands can be issued in parallel to DLL RESET and locking time. Upon self refresh exit, an explicit ZQCL is required if ZQ calibration is desired. In dual-rank systems that share the ZQ resistor between devices, the controller must not allow overlap of tZQINIT, tZQOPER, or tZQCS between ranks. Figure 66: ZQ Calibration Timing (ZQCL and ZQCS)
CK# CK Command Address A10 CKE ODT DQ 1 2 3 High-Z tZQINIT or tZQOPER ZQCL NOP NOP NOP Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid Activities 1 2 3 High-Z tZQCS ZQCS NOP NOP NOP Valid Valid Valid Valid Valid
Activities
T0
T1
Ta0
Ta1
Ta2
Ta3
Tb0
Tb1
Tc0
Tc1
Tc2
Indicates A Break in Time Scale
Don't Care
Notes:
1. CKE must be continuously registered HIGH during the calibration procedure. 2. ODT must be disabled via the ODT signal or the MRS during the calibration procedure. 3. All devices connected to the DQ bus should be High-Z during calibration.
ACTIVATE
Before any READ or WRITE commands can be issued to a bank within the DRAM, a row in that bank must be opened (activated). This is accomplished via the ACTIVATE command, which selects both the bank and the row to be activated. After a row is opened with an ACTIVATE command, a READ or WRITE command may be issued to that row, subject to the tRCD specification. However, if the additive latency is programmed correctly, a READ or WRITE command may be issued prior to tRCD (MIN). In this operation, the DRAM enables a READ or WRITE command to be issued after the ACTIVATE command for that bank, but prior to tRCD (MIN) with the requirement that (ACTIVATE-to-READ/WRITE) + AL tRCD (MIN) (see "POSTED CAS ADDITIVE Latency (AL)" on page 115). tRCD (MIN) should be divided by the clock period and rounded up
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
to the next whole number to determine the earliest clock edge after the ACTIVATE command on which a READ or WRITE command can be entered. The same procedure is used to convert other specification limits from time units to clock cycles. When at least one bank is open, any READ-to-READ command delay or WRITE-toWRITE command delay is restricted to tCCD (MIN). A subsequent ACTIVATE command to a different row in the same bank can only be issued after the previous active row has been closed (precharged). The minimum time interval between successive ACTIVATE commands to the same bank is defined by tRC. A subsequent ACTIVATE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access overhead. The minimum time interval between successive ACTIVATE commands to different banks is defined by t RRD. No more than four bank ACTIVATE commands may be issued in a given t FAW (MIN) period, and the tRRD (MIN) restriction still applies. The tFAW (MIN) parameter applies, regardless of the number of banks already opened or closed. Figure 67: Example: Meeting tRRD (MIN) and tRCD (MIN)
CK# CK Command ACT NOP NOP ACT NOP NOP NOP NOP NOP RD/WR T0 T1 T2 T3 T4 T5 T8 T9 T10 T11
Address
Row
Row
Col
BA[2:0]
Bank x tRRD
Bank y tRCD
Bank y
Indicates A Break in Time Scale
Don't Care
Figure 68: Example: tFAW
CK# CK Command Address ACT NOP ACT NOP ACT NOP ACT NOP NOP ACT T0 T1 T4 T5 T8 T9 T10 T11 T19 T20
Row
Row
Row
Row
Row
BA[2:0]
Bank a tRRD
Bank b
Bank c
Bank d
Bank e y
tFAW
Indicates A Break in Time Scale
Don't Care
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1Gb: x4, x8, x16 DDR3 SDRAM Operations READ
READ bursts are initiated with a READ command. The starting column and bank addresses are provided with the READ command and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is automatically precharged at the completion of the burst. If auto precharge is disabled, the row will be left open after the completion of the burst. During READ bursts, the valid data-out element from the starting column address is available READ latency (RL) clocks later. RL is defined as the sum of POSTED CAS ADDITIVE latency (AL) and CAS latency (CL) (RL = AL + CL). The value of AL and CL is programmable in the mode register via the MRS command. Each subsequent data-out element will be valid nominally at the next positive or negative clock edge (that is, at the next crossing of CK and CK#). Figure 69 shows an example of RL based on a CL setting of 8 and an AL setting of 0. Figure 69: READ Latency
T0 CK# CK Command Address READ Bank a, Col n CL = 8, AL = 0 DQS, DQS# DO n NOP NOP NOP NOP NOP NOP NOP T7 T8 T9 T10 T11 T12 T12
DQ
Indicates A Break in Time Scale
Transitioning Data
Don't Care
Notes:
1. DO n = data-out from column n. 2. Subsequent elements of data-out appear in the programmed order following DO n.
DQS, DQS# is driven by the DRAM along with the output data. The initial low state on DQS and HIGH state on DQS# is known as the READ preamble (tRPRE). The low state on DQS and the HIGH state on DQS#, coincident with the last data-out element, is known as the READ postamble (tRPST). Upon completion of a burst, assuming no other commands have been initiated, the DQ will go High-Z. A detailed explanation of tDQSQ (valid data-out skew), tQH (data-out window hold), and the valid data window are depicted in Figure 80 on page 137. A detailed explanation of tDQSCK (DQS transition skew to CK) is also depicted in Figure 80 on page 137. Data from any READ burst may be concatenated with data from a subsequent READ command to provide a continuous flow of data. The first data element from the new burst follows the last element of a completed burst. The new READ command should be issued tCCD cycles after the first READ command. This is shown for BL8 in Figure 70 on page 131. If BC4 is enabled, tCCD must still be met which will cause a gap in the data output, as shown in Figure 71 on page 131. Nonconsecutive read data is reflected in Figure 72 on page 132. DDR3 SDRAM do not allow interrupting or truncating any READ burst.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Data from any READ burst must be completed before a subsequent WRITE burst is allowed. An example of a READ burst followed by a WRITE burst for BL8 is shown in Figure 73 on page 132 (BC4 is shown in Figure 74 on page 133). To ensure the read data is completed before the write data is on the bus, the minimum READ-to-WRITE timing is RL + tCCD - WL + 2tCK. A READ burst may be followed by a PRECHARGE command to the same bank provided auto precharge is not activated. The minimum READ-to-PRECHARGE command spacing to the same bank is four clocks and must also satisfy a minimum analog time from the READ command. This time is called tRTP (READ-to-PRECHARGE). tRTP starts AL cycles later than the READ command. Examples for BL8 are shown in Figure 75 on page 133 and BC4 in Figure 76 on page 134. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. The PRECHARGE command followed by another PRECHARGE command to the same bank is allowed. However, the precharge period will be determined by the last PRECHARGE command issued to the bank. If A10 is HIGH when a READ command is issued, the READ with auto precharge function is engaged. The DRAM starts an auto precharge operation on the rising edge which is AL + tRTP cycles after the READ command. DRAM support a tRAS lockout feature (see Figure 78 on page 134). If tRAS (MIN) is not satisfied at the edge, the starting point of the auto precharge operation will be delayed until tRAS (MIN) is satisfied. If tRTP (MIN) is not satisfied at the edge, the starting point of the auto precharge operation will be delayed until tRTP (MIN) is satisfied. In case the internal precharge is pushed out by t RTP, tRP starts at the point at which the internal precharge happens (not at the next rising clock edge after this event). The time from READ with auto precharge to the next ACTIVATE command to the same bank is AL + (tRTP + tRP)*, where "*" means rounded up to the next integer. In any event, internal precharge does not start earlier than four clocks after the last 8n-bit prefetch.
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Figure 70: Consecutive READ Bursts (BL8)
T0 CK# CK Command1 READ NOP NOP tCCD Address2
Bank, Col n Bank, Col b
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T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
NOP
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tRPRE DQS, DQS# DQ3 RL = 5
DO n DO n+1 DO n+2 DO n+3 DO n+4 DO n+5 DO n+6 DO n+7 DO b DO b+1 DO b+2 DO b+3 DO b+4 DO b+5 DO b+6
tRPST
DO b+7
RL = 5
Transitioning Data
Don't Care
Notes:
1. 2. 3. 4.
NOP commands are shown for ease of illustration; other commands may be valid at these times. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ command at T0 and T4. DO n (or b) = data-out from column n (or column b). BL8, RL = 5 (CL = 5, AL = 0).
Figure 71: Consecutive READ Bursts (BC4) 131
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T0 CK# CK Command1 READ
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
NOP
NOP tCCD
NOP
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Address2
Bank, Col n
Bank, Col b
tRPRE DQS, DQS# DQ3 RL = 5
DO n DO n+1 DO n+2
tRPST
tRPRE
tRPST
1Gb: x4, x8, x16 DDR3 SDRAM Operations
DO n+3
DO b
DO b+1
DO b+2
DO b+3
RL = 5
Transitioning Data
Don't Care
Notes:
1. 2. 3. 4.
NOP commands are shown for ease of illustration; other commands may be valid at these times. The BC4 setting is activated by either MR0[1:0] = 10 or MR0[1:0] = 01 and A12 = 0 during READ command at T0 and T4. DO n (or b) = data-out from column n (or column b). BC4, RL = 5 (CL = 5, AL = 0).
Figure 72: Nonconsecutive READ Bursts
T0 CK# CK Command Address READ Bank a, Col n NOP NOP NOP NOP READ Bank a, Col b CL = 8 CL = 8 DQS, DQS# DQ DO n DO b NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
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Transitioning Data
Don't Care
Notes:
1. 2. 3. 4.
AL = 0, RL = 8. DO n (or b) = data-out from column n (or column b). Seven subsequent elements of data-out appear in the programmed order following DO n. Seven subsequent elements of data-out appear in the programmed order following DO b.
Figure 73: READ (BL8) to WRITE (BL8)
CK# CK Command1 READ NOP NOP NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP tWR tWTR T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15
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READ-to-WRITE command delay = RL + tCCD + 2tCK - WL
tBL = 4 clocks
Address2
Bank, Col n
Bank, Col b
tRPRE DQS, DQS# DQ3 RL = 5
DO n DO n+1 DO n+2 DO n+3 DO n+4 DO n+5 DO n+6
tRPST
tWPRE
tWPST
1Gb: x4, x8, x16 DDR3 SDRAM Operations
DO n+7
DI n
DI n+1
DI n+2
DI n+3
DI n+4
DI n+5
DI n+6
DI n+7
WL = 5
Transitioning Data
Don't Care
Notes:
1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the READ command at T0, and the WRITE command at T6. 3. DO n = data-out from column, DI b = data-in for column b. 4. BL8, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
Figure 74: READ (BC4) to WRITE (BC4) OTF
CK# CK Command1 READ NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP tWR tWTR NOP T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15
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READ-to-WRITE command delay = RL + tCCD/2 + 2tCK - WL
tBL = 4 clocks
Address2
Bank, Col n
Bank, Col b
tRPRE DQS, DQS# DQ3 RL = 5
DO n DO n+1 DO n+2
tRPST
tWPRE
tWPST
DO n+3
DI n
DI n+1
DI n+2
DI n+3
WL = 5
Transitioning Data
Don't Care
Notes:
1. 2. 3. 4.
NOP commands are shown for ease of illustration; other commands may be valid at these times. The BC4 OTF setting is activated by MR0[1:0] and A12 = 0 during READ command at T0 and WRITE command at T4. DO n = data-out from column n; DI n = data-in from column b. BC4, RL = 5 (AL - 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
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T0 CK# CK T1 T2 Command Address READ
Bank a, Col n
Figure 75: READ to PRECHARGE (BL8)
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
1Gb: x4, x8, x16 DDR3 SDRAM Operations
NOP
NOP
NOP
NOP
PRE
Bank a, (or all)
NOP
NOP
NOP
NOP
NOP
NOP
NOP
ACT
Bank a, Row b
NOP
NOP
NOP
NOP
tRTP
tRP
DQS, DQS# DQ tRAS
DO n DO n+1 DO n+2 DO n+3 DO n+4 DO n+5 DO n+6 DO n+7
Transitioning Data
Don't Care
Figure 76: READ to PRECHARGE (BC4)
CK# CK Command Address READ
Bank a, Col n
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T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
NOP
NOP
NOP
NOP
PRE
Bank a, (or all)
NOP
NOP
NOP
NOP
NOP
NOP
NOP
ACT
Bank a, Row b
NOP
NOP
NOP
NOP
tRP tRTP DQS, DQS# DQ tRAS
DO n DO n+1 DO n+2 DO n+3
Transitioning Data
Don't Care
Figure 77: READ to PRECHARGE (AL = 5, CL = 6)
T0 CK# CK Command Address READ Bank a, Col n AL = 5 DQS, DQS# DQ CL = 6 tRAS
DO n DO n+1 DO n+2 DO n+3
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
PRE Bank a, (or all)
NOP
NOP
NOP
NOP
NOP
ACT Bank a, Row b
tRTP
tRP
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T0 CK# CK Command Address READ
Bank a, Col n
Transitioning Data
Don't Care
Figure 78: READ with Auto Precharge (AL = 4, CL = 6)
T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 Ta0
1Gb: x4, x8, x16 DDR3 SDRAM Operations
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
ACT
Bank a, Row b
AL = 4 DQS, DQS#
tRTP (MIN)
DQ CL = 6 tRAS (MIN)
DO n
DO n+1
DO n+2
DO n+3
tRP
Indicates A Break in Time Scale
Transitioning Data
Don't Care
1Gb: x4, x8, x16 DDR3 SDRAM Operations
A DQS to DQ output timing is shown in Figure 79 on page 136. The DQ transitions between valid data outputs must be within tDQSQ of the crossing point of DQS, DQS#. DQS must also maintain a minimum HIGH and LOW time of tQSH and tQSL. Prior to the READ preamble, the DQ balls will either be floating or terminated depending on the status of the ODT signal. Figure 80 on page 137 shows the strobe-to-clock timing during a READ. The crossing point DQS, DQS# must transition within tDQSCK of the clock crossing point. The data out has no timing relationship to clock, only to DQS, as shown in Figure 80 on page 137. Figure 80 on page 137 also shows the READ preamble and postamble. Normally, both DQS and DQS# are High-Z to save power (VDDQ). Prior to data output from the DRAM, DQS is driven LOW and DQS# is HIGH for tRPRE. This is known as the READ preamble. The READ postamble, tRPST, is one half clock from the last DQS, DQS# transition. During the READ postamble, DQS is driven LOW and DQS# is HIGH. When complete, the DQ will either be disabled or will continue terminating depending on the state of the ODT signal. Figure 85 on page 140 demonstrates how to measure tRPST.
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Figure 79: Data Output Timing - tDQSQ and Data Valid Window
CK# CK Command1 READ NOP NOP RL = AL + CL NOP NOP NOP NOP NOP NOP NOP NOP T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
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Address 2
Bank, Col n tDQSQ (MAX) tLZ (DQ) MIN tDQSQ (MAX) tRPST tHZ (DQ) MAX tQH DO n DO n
DO n
DQS, DQS# tRPRE DQ3 (last data valid) DQ3 (first data no longer valid) All DQ collectively tQH DO DO DO DO DO DO DO n+1 n+2 n+3 n+4 n+5 n+6 n+7 DO DO DO DO DO DO DO n+3 n+1 n+2 n+4 n+5 n+6 n+7
DO n+1 DO n+2 DO n+3 DO n+4 DO n+5 DO n+6 DO n+7
Data valid
Data valid Transitioning Data Don't Care
Notes:
1. 2. 3. 4. 5. 6. 7.
NOP commands are shown for ease of illustration; other commands may be valid at these times. The BL8 setting is activated by either MR0[1, 0] = 0, 0 or MR0[0, 1] = 0, 1 and A12 = 1 during READ command at T0. DO n = data-out from column n. BL8, RL = 5 (AL = 0, CL = 5). Output timings are referenced to VDDQ/2 and DLL on and locked. tDQSQ defines the skew between DQS, DQS# to data and does not define DQS, DQS# to clock. Early data transitions may not always happen at the same DQ. Data transitions of a DQ can vary (either early or late) within a burst.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
1Gb: x4, x8, x16 DDR3 SDRAM Operations
HZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level which specifies when the device output is no longer driving tHZ (DQS) and tHZ (DQ) or begins driving tLZ (DQS), t LZ (DQ). Figure 81 shows a method to calculate the point when the device is no longer driving tHZ (DQS) and tHZ (DQ) or begins driving tLZ (DQS), tLZ (DQ) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the calculation is consistent. The parameters tLZ (DQS), tLZ (DQ), tHZ (DQS), and tHZ (DQ) are defined as single-ended. Figure 80: Data Strobe Timing - READs
RL measured to this point T0 CK CK# tDQSCK (MIN) tLZ (DQS) MIN DQS, DQS# early strobe tRPRE Bit 0 tLZ (DQS) MAX Bit 1 tDQSCK (MAX) Bit 2 Bit 3 tDQSCK (MAX) Bit 4 Bit 5 tDQSCK (MAX) Bit 6 Bit 7 tDQSCK (MAX) tRPST DQS, DQS# late strobe tRPRE Bit 0 tQSH tQSL tQSH tQSL tRPST tHZ (DQS) MAX tDQSCK (MIN) tDQSCK (MIN) tDQSCK (MIN) tHZ (DQS) MIN T1 T2 T3 T4 T5 T6
t
tQSH
tQSL
tQSH
tQSL
Bit 1
Bit 2
Bit 3
Bit 4
Bit 5
Bit 6
Bit 7
Figure 81: Method for Calculating tLZ and tHZ
VOH - xmV VOH - 2xmV tHZ (DQS), tHZ (DQ) T2 T1 VOL + 2xmV VOL + xmV VTT - xmV VTT - 2xmV T1 T2 VTT + 2xmV VTT + xmV tLZ (DQS), tLZ (DQ)
tHZ (DQS), tHZ (DQ) end point = 2 x T1 - T2
tLZ (DQS), tLZ (DQ) begin point = 2 x T1 - T2
Notes:
1. Within a burst, the rising strobe edge is not necessarily fixed at tDQSCK (MIN) or tDQSCK (MAX). Instead, the rising strobe edge can vary between tDQSCK (MIN) and tDQSCK (MAX). 2. The DQS high pulse width is defined by tQSH, and the DQS low pulse width is defined by tQSL. Likewise, tLZ (DQS) MIN and tHZ (DQS) MIN are not tied to tDQSCK (MIN) (early strobe case) and tLZ (DQS) MAX and tHZ (DQS) MAX are not tied to tDQSCK (MAX) (late strobe case); however, they tend to track one another. 3. The minimum pulse width of the READ preamble is defined by tRPRE (MIN). The minimum pulse width of the READ postamble is defined by tRPST (MIN).
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 82: tRPRE Timing
CK VTT CK# tA DQS Single-ended signal provided as background information tC DQS# Single-ended signal provided as background information T1 tRPRE begins DQS - DQS# Resulting differential signal relevant for tRPRE specification tRPRE T2 tRPRE ends 0V tD VTT tB VTT
Figure 83: tRPST Timing
CK VTT CK#
tA DQS Single-ended signal, provided as background information tC DQS# Single-ended signal, provided as background information tB VTT
tD VTT
DQS - DQS# Resulting differential signal relevant for tRPST specification T1 tRPST begins
tRPST
0V
T2 tRPST ends
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1Gb: x4, x8, x16 DDR3 SDRAM Operations WRITE
WRITE bursts are initiated with a WRITE command. The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access. If auto precharge is selected, the row being accessed will be precharged at the end of the WRITE burst. If auto precharge is not selected, the row will remain open for subsequent accesses. After a WRITE command has been issued, the WRITE burst may not be interrupted. For the generic WRITE commands used in Figure 86 on page 141 through Figure 94 on page 146, auto precharge is disabled. During WRITE bursts, the first valid data-in element is registered on a rising edge of DQS following the WRITE latency (WL) clocks later and subsequent data elements will be registered on successive edges of DQS. WRITE latency (WL) is defined as the sum of POSTED CAS ADDITIVE latency (AL) and CAS WRITE latency (CWL): WL = AL + CWL. The values of AL and CWL are programmed in the MR0 and MR2 registers, respectively. Prior to the first valid DQS edge, a full cycle is needed (including a dummy crossover of DQS, DQS#) and specified as the WRITE preamble shown in Figure 86 on page 141. The half cycle on DQS following the last data-in element is known as the WRITE postamble. The time between the WRITE command and the first valid edge of DQS is WL clocks tDQSS. Figure 87 on page 142 through Figure 94 on page 146 show the nominal case where tDQSS = 0ns; however, Figure 86 on page 141 includes tDQSS (MIN) and tDQSS (MAX) cases. Data may be masked from completing a WRITE using data mask. The mask occurs on the DM ball aligned to the write data. If DM is LOW, the write completes normally. If DM is HIGH, that bit of data is masked. Upon completion of a burst, assuming no other commands have been initiated, the DQ will remain High-Z, and any additional input data will be ignored. Data for any WRITE burst may be concatenated with a subsequent WRITE command to provide a continuous flow of input data. The new WRITE command can be tCCD clocks following the previous WRITE command. The first data element from the new burst is applied after the last element of a completed burst. Figures 87 and 88 on page 142 show concatenated bursts. An example of nonconsecutive WRITEs is shown in Figure 89 on page 143. Data for any WRITE burst may be followed by a subsequent READ command after tWTR has been met (see Figures 90 and 91 on page 144 and Figure 92 on page 145). Data for any WRITE burst may be followed by a subsequent PRECHARGE command providing tWR has been met, as shown in Figure 93 on page 146 and Figure 94 on page 146. Both tWTR and tWR starting time may vary depending on the mode register settings (fixed BC4, BL8 vs. OTF).
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 84: tWPRE Timing
CK VTT CK#
T1 tWPRE begins DQS - DQS# Resulting differential signal relevant for tWPRE specification 0V T2 tWPRE ends
tWPRE
Figure 85: tWPST Timing
CK VTT CK#
tWPST DQS - DQS# Resulting differential signal relevant for tWPST specification T1 tWPST begins T2 tWPST ends 0V
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 86: Write Burst
T0 CK# CK Command1 WRITE NOP NOP WL = AL + CWL Address2 Bank, Col n NOP NOP NOP NOP NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
tDQSS tDSH tDQSS (MIN) DQS, DQS# tDQSH tDQSL tDQSH tDQSL tWPRE
tDSH
tDSH
tDSH tWPST
tDQSH
tDQSL
tDQSH
tDQSL
tDQSH
tDQSL
DQ3
DI n
DI n+1
DI n+2
DI n+3
DI n+4
DI n+5
DI n+6
DI n+7
tDSH tDQSS (NOM) DQS, DQS# tDQSH tDQSL tDSS DQ3 DI n tDQSH tDQSL tDSS DI n+1 tWPRE
tDSH
tDSH
tDSH tWPST
tDQSH
tDQSL tDSS
tDQSH
tDQSL tDSS
tDQSH
tDQSL tDSS
DI n+2
DI n+3
DI n+4
DI n+5
DI n+6
DI n+7
tDQSS
tDQSS (MAX) DQS, DQS#
tWPRE
tWPST
tDQSH
tDQSL tDSS
tDQSH
tDQSL tDSS
tDQSH
tDQSL tDSS
tDQSH
tDQSL tDSS
tDQSH
tDQSL tDSS
DQ3
DI n
DI n+1
DI n+2
DI n+3
DI n+4
DI n+5
DI n+6
DI n+7 Transitioning Data Don't Care
Notes:
1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the WRITE command at T0. 3. DI n = data-in for column n. 4. BL8, WL = 5 (AL = 0, CWL = 5). 5. tDQSS must be met at each rising clock edge. 6. tWPST is usually depicted as ending at the crossing of DQS, DQS#; however, tWPST actually ends when DQS no longer drives LOW and DQS# no longer drives HIGH.
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Figure 87: Consecutive WRITE (BL8) to WRITE (BL8)
T0 CK# CK Command1 WRITE NOP NOP tCCD NOP WRITE NOP NOP NOP NOP NOP NOP NOP tBL = 4 clocks NOP NOP tWR tWTR Address2 Valid Valid tWPST NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14
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tWPRE DQS, DQS# DQ3 WL = 5 WL = 5 DI n DI n+1 DI n+2 DI n+3 DI n+4 DI n+5 DI n+6 DI n+7 DI b DI b+1 DI b+2 DI b+3 DI b+4 DI b+5 DI b+6
DI b+7
Transitioning Data
Don't Care
Notes:
1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the WRITE commands at T0 and T4. 3. DI n (or b) = data-in for column n (or column b). 4. BL8, WL = 5 (AL = 0, CWL = 5).
Figure 88: Consecutive WRITE (BC4) to WRITE (BC4) via MRS or OTF 142
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T0 CK# CK Command1 WRITE NOP NOP tCCD NOP WRITE NOP NOP NOP NOP NOP NOP NOP tBL = 4 clocks NOP NOP tWR tWTR Address2 Valid Valid NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14
tWPRE DQS, DQS# DQ3 WL = 5 DI n DI n+1 DI n+2
tWPST
tWPRE
tWPST
1Gb: x4, x8, x16 DDR3 SDRAM Operations
DI n+3
DI b
DI b+1
DI b+2
DI b+3
WL = 5 Transitioning Data Don't Care
Notes:
1. 2. 3. 4.
NOP commands are shown for ease of illustration; other commands may be valid at these times. BC4, WL = 5 (AL = 0, CWL = 5). DI n (or b) = data-in for column n (or column b). The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and T4.
Figure 89: Nonconsecutive WRITE to WRITE
CK# CK Command Address WRITE Valid NOP NOP NOP NOP WRITE Valid WL = CWL + AL = 7 WL = CWL + AL = 7 DQS, DQS# DQ DM DI n DI n+1 DI n+2 DI n+3 DI n+4 DI n+5 DI n+6 DI n+7 DI b DI b+1 DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
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Transitioning Data
Don't Care
Notes:
1. 2. 3. 4.
DI n (or b) = data-in for column n (or column b). Seven subsequent elements of data-in are applied in the programmed order following DO n. Each WRITE command may be to any bank. Shown for WL = 7 (CWL = 7, AL = 0).
Figure 90: WRITE (BL8) to READ (BL8)
T0 CK# CK T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 Ta0
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Command1
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP tWTR2
NOP
READ
Address3
Valid tWPRE tWPST
Valid
1Gb: x4, x8, x16 DDR3 SDRAM Operations
DQS, DQS# DQ4 WL = 5 Indicates A Break in Time Scale DI n DI n+1 DI n+2 DI n+3 DI n+4 DI n+5 DI n+6 DI n+7
Transitioning Data
Don't Care
Notes:
1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last write data shown at T9. 3. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and MR0[12] = 1 during the WRITE command at T0. The READ command at Ta0 can be either BC4 or BL8, depending on MR0[1:0] and the A12 status at Ta0. 4. DI n = data-in for column n. 5. RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
Figure 91: WRITE to READ (BC4 Mode Register Setting)
T0 CK# CK Command1 WRITE NOP NOP NOP NOP NOP NOP NOP NOP tWTR2 NOP READ T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0
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Address3
Valid tWPRE tWPST
Valid
DQS, DQS# DQ4 WL = 5 DI n DI n+1 DI n+2 DI n+3
Indicates A Break in Time Scale
Transitioning Data
Don't Care
Notes:
1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last write data shown at T7. 3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0 and the READ command at Ta0. 4. DI n = data-in for column n. 5. BC4 (fixed), WL = 5 (AL = 0, CWL = 5), RL = 5 (AL = 0, CL = 5).
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 92: WRITE (BC4 OTF) to READ (BC4 OTF)
T0 CK# CK Command1 WRITE NOP NOP NOP NOP NOP NOP NOP tBL = 4 clocks NOP NOP NOP tWTR2 NOP READ T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 Tn
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Address3
Valid tWPRE tWPST
Valid
DQS, DQS# DQ4 WL = 5 DI n DI n+1 DI n+2 DI n+3 RL = 5
Indicates A Break in Time Scale
Transitioning Data
Don't Care
Notes:
NOP commands are shown for ease of illustration; other commands may be valid at these times. controls the WRITE-to-READ delay to the same device and starts after tBL. The BC4 OTF setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and the READ command at Tn. 4. DI n = data-in for column n. 5. BC4, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
tWTR
1. 2. 3.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 93:
CK# CK T0
WRITE (BL8) to PRECHARGE
T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 Ta0 Ta1
Command
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
PRE
Address
Valid WL = AL + CWL tWR
Valid
DQS, DQS# DQ BL8 DI n DI n+1 DI n+2 DI n+3 DI n+4 DI n+5 DI n+6 DI n+7
Indicates A Break in Time Scale
Transitioning Data
Don't Care
Notes:
1. DI n = data-in from column n. 2. Seven subsequent elements of data-in are applied in the programmed order following DO n. 3. Shown for WL = 7 (AL = 0, CWL = 7).
Figure 94: WRITE (BC4 Mode Register Setting) to PRECHARGE
CK# CK T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 Ta0 Ta1
Command
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
PRE
Address
Valid WL = AL + CWL tWR
Valid
DQS, DQS# DQ BC4 DI n DI n+1 DI n+2 DI n+3
Indicates A Break in Time Scale
Transitioning Data
Don't Care
Notes:
1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The write recovery time (tWR) is referenced from the first rising clock edge after the last write data is shown at T7. tWR specifies the last burst WRITE cycle until the PRECHARGE command can be issued to the same bank. 3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0. 4. DI n = data-in for column n. 5. BC4 (fixed), WL = 5, RL = 5.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 95: WRITE (BC4 OTF) to PRECHARGE
T0 CK# CK Command1 T1 T2 T3 T4 T5 T6 T7 T8 T9 Tn
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP tWR2
PRE
Address3
Bank, Col n tWPRE tWPST
Valid
DQS, DQS# DQ4 WL = 5 DI n DI n+1 DI n+2 DI n+3
Indicates A Break In Time Scale
Transitioning Data
Don't Care
Notes:
1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The write recovery time (tWR) is referenced from the rising clock edge at T9. tWR specifies the last burst WRITE cycle until the PRECHARGE command can be issued to the same bank. 3. The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0. 4. DI n = data-in for column n. 5. BC4 (OTF), WL = 5, RL = 5.
DQ Input Timing Figure 86 on page 141 shows the strobe to clock timing during a WRITE. DQS, DQS# must transition within 0.25tCK of the clock transitions as limited by tDQSS. All data and data mask setup and hold timings are measured relative to the DQS, DQS# crossing, not the clock crossing. The WRITE preamble and postamble are also shown. One clock prior to data input to the DRAM, DQS must be HIGH and DQS# must be LOW. Then for a half clock, DQS is driven LOW (DQS# is driven HIGH) during the WRITE preamble, tWPRE. Likewise, DQS must be kept LOW by the controller after the last data is written to the DRAM during the WRITE postamble, tWPST. Data setup and hold times are shown in Figure 96 on page 148. All setup and hold times are measured from the crossing points of DQS and DQS#. These setup and hold values pertain to data input and data mask input. Additionally, the half period of the data input strobe is specified by tDQSH and tDQSL.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 96: Data Input Timing
DQS, DQS# tWPRE DQ DM tDS tDQSH DI b tDQSL tWPST
tDH Transitioning Data Don't Care
PRECHARGE
Input A10 determines whether one bank or all banks are to be precharged, and in the case where only one bank is to be precharged, inputs BA[2:0] select the bank. When all banks are to be precharged, inputs BA[2:0] are treated as "Don't Care." After a bank is precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued.
SELF REFRESH
The SELF REFRESH command is initiated like a REFRESH command except CKE is LOW. The DLL is automatically disabled upon entering SELF REFRESH and is automatically enabled and reset upon exiting SELF REFRESH. The DRAM must be idle with all banks in the precharge state (tRP is satisfied and no bursts are in progress) before a self refresh entry command can be issued. ODT must also be turned off before self refresh entry by registering the ODT ball LOW prior to the self refresh entry command (see "On-Die Termination (ODT)" on page 160 for timing requirements). If RTT_NOM and RTT_WR are disabled in the mode registers, ODT can be a "Don't Care." After the self refresh entry command is registered, CKE must be held LOW to keep the DRAM in self refresh mode. After the DRAM has entered self refresh mode, all external control signals, except CKE and RESET#, become "Don't Care." The DRAM initiates a minimum of one REFRESH command internally within the tCKE period when it enters self refresh mode. The requirements for entering and exiting self refresh mode depend on the state of the clock during self refresh mode. First and foremost, the clock must be stable (meeting tCK specifications) when self refresh mode is entered. If the clock remains stable and the frequency is not altered while in self refresh mode, then the DRAM is allowed to exit self refresh mode after tCKESR is satisfied (CKE is allowed to transition HIGH tCKESR later than when CKE was registered LOW). Since the clock remains stable in self refresh mode (no frequency change), tCKSRE and tCKSRX are not required. However, if the clock is altered during self refresh mode (turned-off or frequency change), then tCKSRE and tCKSRX must be satisfied. When entering self refresh mode, tCKSRE must be satisfied prior to altering the clock's frequency. Prior to exiting self refresh mode, tCKSRX must be satisfied prior to registering CKE HIGH. When CKE is HIGH during self refresh exit, NOP or DES must be issued for tXS time. tXS is required for the completion of any internal refresh that is already in progress and must be satisfied before a valid command not requiring a locked DLL can be issued to the device. tXS is also the earliest time self refresh reentry may occur (see Figure 97 on
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
page 149). Before a command requiring a locked DLL can be applied, a ZQCL command must be issued, tZQOPER timing must be met, and tXSDLL must be satisfied. ODT must be off during tXSDLL. Figure 97: Self Refresh Entry/Exit Timing
T0 CK# CK tCKSRE1 tCKSRX1 T1 T2 Ta0 Tb0 Tc0 Tc1 Td0 Te0 Tf0
tIS CKE
tCPDED
tIH
tIS Valid Valid
tCKESR (MIN)1 tIS ODT2 Valid
ODTL
RESET#2
Command
NOP
SRE (REF)3
NOP4
SRX (NOP)
NOP5
Valid6
Valid7
Address tRP8
Valid
Valid
tXS6, 9 tXSDLL7, 9
Enter self refresh mode (synchronous)
Exit self refresh mode (asynchronous) Indicates A Break in Time Scale Don't Care
Notes:
1. The clock must be valid and stable meeting tCK specifications at least tCKSRE after entering self refresh mode, and at least tCKSRX prior to exiting self refresh mode, if the clock is stopped or altered between states Ta0 and Tb0. If the clock remains valid and unchanged from entry and during self refresh mode, then tCKSRE and tCKSRX do not apply; however, tCKESR must be satisfied prior to exiting at SRX. 2. ODT must be disabled and RTT off prior to entering self refresh at state T1. If both RTT_NOM and RTT_WR are disabled in the mode registers, ODT can be a "Don't Care." 3. Self refresh entry (SRE) is synchronous via a REFRESH command with CKE LOW. 4. A NOP or DES command is required at T2 after the SRE command is issued prior to the inputs becoming "Don't Care." 5. NOP or DES commands are required prior to exiting self refresh mode until state Te0. 6. tXS is required before any commands not requiring a locked DLL. 7. tXSDLL is required before any commands requiring a locked DLL. 8. The device must be in the all banks idle state prior to entering self refresh mode. For example, all banks must be precharged, tRP must be met, and no data bursts can be in progress. 9. Self refresh exit is asynchronous; however, tXS and tXSDLL timings start at the first rising clock edge where CKE HIGH satisfies tISXR at Tc1. tCKSRX timing is also measured so that tISXR is satisfied at Tc1.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations Extended Temperature Usage
Micron's DDR3 SDRAM support the optional extended temperature range of 0C to 95C, TC. Thus, the SRT and ASR options must be used at a minimum. The extended temperature range DRAM must be refreshed externally at 2X (double refresh) anytime the case temperature is above 85C (and does not exceed 95C). The external refreshing requirement is accomplished by reducing the refresh period from 64ms to 32ms. However, self refresh mode requires either ASR or SRT to support the extended temperature. Thus either ASR or SRT must be enabled when TC is above 85C or self refresh cannot be used until the case temperature is at or below 85C. Table 71 summarizes the two extended temperature options and Table 72 summarizes how the two extended temperature options relate to one another. Table 71:
Field SRT
Self Refresh Temperature and Auto Self Refresh Description
MR2 Bits 7 Description If ASR is disabled (MR2[6] = 0), SRT must be programmed to indicate TOPER during self refresh: *MR2[7] = 0: Normal operating temperature range (0C to 85C) *MR2[7] = 1: Extended operating temperature range (0C to 95C) If ASR is enabled (MR2[7] = 1), SRT must be set to 0, even if the extended temperature range is supported *MR2[7] = 0: SRT is disabled When ASR is enabled, the DRAM automatically provides SELF REFRESH power management functions, (refresh rate for all supported operating temperature values) * MR2[6] = 1: ASR is enabled (M7 must = 0) When ASR is not enabled, the SRT bit must be programmed to indicate TOPER during SELF REFRESH operation * MR2[6] = 0: ASR is disabled, must use manual self refresh temperature (SRT)
Self Refresh Temperature (SRT)
Auto Self Refresh (ASR) ASR 6
Table 72:
Self Refresh Mode Summary
Permitted Operating Temperature Range for Self Refresh Mode Normal and extended (0C to 95C)
MR2[6] MR2[7] (ASR) (SRT) SELF REFRESH Operation 0 0 0 1 Self refresh mode is supported in normal and extended temperature ranges; When SRT is enabled, it increases self refresh power consumption Self refresh mode is supported in normal and extended temperature ranges; Self refresh power consumption may be temperature-dependent Illegal
Self refresh mode is supported in the normal temperature range Normal (0C to 85C)
1
0
Normal and extended (0C to 95C)
1
1
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1Gb: x4, x8, x16 DDR3 SDRAM Operations Power-Down Mode
Power-down is synchronously entered when CKE is registered LOW coincident with a NOP or DES command. CKE is not allowed to go LOW while either an MRS, MPR, ZQCAL, READ, or WRITE operation is in progress. CKE is allowed to go LOW while any of the other legal operations (such as ROW ACTIVATION, PRECHARGE, auto precharge, or REFRESH) are in progress. However, the power-down IDD specifications are not applicable until such operations have been completed. Depending on the previous DRAM state and the command issued prior to CKE going LOW, certain timing constraints must be satisfied (as noted in Table 73). Timing diagrams detailing the different power-down mode entry and exits are shown in Figure 98 on page 152 through Figure 107 on page 157. Table 73: Command to Power-Down Entry Parameters
Last Command Prior to CKE LOW1 ACTIVATE PRECHARGE READ or READAP WRITE: BL8OTF, BL8MRS, BC4OTF WRITE: BC4MRS WRITEAP: BL8OTF, BL8MRS, BC4OTF WRITEAP: BC4MRS REFRESH REFRESH MODE REGISTER SET Notes:
tREFPDEN tXPDLL tMRSPDEN tWRAPDEN
DRAM Status Idle or active Idle or active Active Active Active Active Active Idle Power-down Idle
Parameter (Min)
tACTPDEN tPRPDEN tRDPDEN tWRPDEN
Parameter Value 1tCK 1tCK RL + 4tCK + 1tCK WL + 4tCK +
tWR/tCK
Figure Figure 105 on page 156 Figure 106 on page 156 Figure 101 on page 154 Figure 102 on page 154 Figure 102 on page 154 Figure 103 on page 155 Figure 103 on page 155 Figure 104 on page 155 Figure 108 on page 157 Figure 107 on page 157
WL + 2tCK + tWR/tCK WL + 4tCK + WR + 1tCK WL + 2tCK + WR + 1tCK 1tCK Greater of 10tCK or 24ns
tMOD
1. If slow-exit mode precharge power-down is enabled and entered, ODT becomes asynchronous tANPD prior to CKE going LOW and remains asynchronous until tANPD + tXPDLL after CKE goes HIGH.
Entering power-down disables the input and output buffers, excluding CK, CK#, ODT, CKE, and RESET#. NOP or DES commands are required until tCPDED has been satisfied, at which time all specified input/output buffers will be disabled. The DLL should be in a locked state when power-down is entered for the fastest power-down exit timing. If the DLL is not locked during power-down entry, the DLL must be reset after exiting powerdown mode for proper READ operation as well as synchronous ODT operation. During power-down entry, if any bank remains open after all in-progress commands are complete, the DRAM will be in active power-down mode. If all banks are closed after all in-progress commands are complete, the DRAM will be in precharge power-down mode. Precharge power-down mode must be programmed to exit with either a slow exit mode or a fast exit mode. When entering precharge power-down mode, the DLL is turned off in slow exit mode or kept on in fast exit mode. The DLL remains on when entering active power-down as well. ODT has special timing constraints when slow exit mode precharge power-down is enabled and entered. Refer to "Asynchronous ODT Mode" on page 172 for detailed ODT usage requirements in slow exit mode precharge power-down. A summary of the two power-down modes is listed in Table 74 on page 152.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
While in either power-down state, CKE is held LOW, RESET# is held HIGH, and a stable clock signal must be maintained. ODT must be in a valid state but all other input signals are a "Don't Care." If RESET# goes LOW during power-down, the DRAM will switch out of power-down mode and go into the reset state. After CKE is registered LOW, CKE must remain LOW until tPD (MIN) has been satisfied. The maximum time allowed for powerdown duration is tPD (MAX) (9 x tREFI). The power-down states are synchronously exited when CKE is registered HIGH (with a required NOP or DES command). CKE must be maintained HIGH until tCKE has been satisfied. A valid, executable command may be applied after power-down exit latency, t XP tXPDLL have been satisfied. A summary of the power-down modes is listed in Table 74. For certain CKE-intensive operations, for example, repeating a power-down exit to refresh to power-down entry sequence, the number of clock cycles between power-down exit and power-down entry may not be sufficient enough to keep the DLL properly updated. In addition to meeting tPD when the REFRESH command is used in between power-down exit and power-down entry, two other conditions must be met. First, tXP must be satisfied before issuing the REFRESH command. Second, tXPDLL must be satisfied before the next power-down may be entered. An example is shown in Figure 108 on page 157. Table 74:
DRAM State Active (any bank open) Precharged (all banks precharged)
Power-Down Modes
MR1[12] "Don't Care" 1 0 DLL State On On Off Power-Down Exit Fast Fast Slow
tXP tXP
Relevant Parameters to any other valid command to any other valid command
tXPDLL to commands that require the DLL to be locked
(READ, RDAP, or ODT on) tXP to any other valid command
Figure 98: Active Power-Down Entry and Exit
T0 CK# CK tCK tCH tCL T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4
Command
Valid
NOP tIS
NOP tPD tIH
NOP
NOP
NOP
Valid
CKE
tIH
tIS
tCKE (MIN)
Address
Valid tCPDED Enter power-down mode Exit power-down mode Indicates A Break in Time Scale tXP
Valid
Don't Care
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 99: Precharge Power-Down (Fast-Exit Mode) Entry and Exit
T0 CK# CK tCK NOP tCH tCL NOP NOP NOP NOP Valid T1 T2 T3 T4 T5 Ta0 Ta1
Command
tCPDED
tCKE (MIN)
tIS CKE
tIH
tCKEmin
tIS
tCKEmin
tPD Enter power-down mode
tXP Exit power-down mode Indicates A Break in Time Scale Don't Care
Figure 100: Precharge Power-Down (Slow-Exit Mode) Entry and Exit
T0 CK# CK tCK PRE NOP tCH tCL NOP NOP NOP Valid1 Valid2 T1 T2 T3 T4 Ta Ta1 Tb
Command
tCPDED
tCKE (MIN) tXP
tIS CKE tPD Enter power-down mode
tIH tIS tXPDLL
Exit power-down mode Indicates A Break in Time Scale Don't Care
Notes:
1. Any valid command not requiring a locked DLL. 2. Any valid command requiring a locked DLL.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 101: Power-Down Entry After READ or READ with Auto Precharge (RDAP)
CK# CK READ/ RDAP T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Ta8 Ta9 Ta10 Ta11 Ta12
Command
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP tIS tCPDED
NOP
CKE
Address
Valid RL = AL + CL tPD
DQS, DQS#
DQ BL8
DI n
DI DI n+1 n+2
DI n+3
DI n+4
DI n+ 5
DI n+6
DI n+7
DQ BC4
DI n
DI n+1
DI n+2
DI n+3
tRDPDEN
Power-down or self refresh entry
Indicates A Break In Time Scale
Transitioning Data
Don't Care
Figure 102: Power-Down Entry After WRITE
CK# CK T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Tb0 Tb1 Tb2 Tb3 Tb4
Command
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP tIS tCPDED
NOP
CKE
Address
Valid WL = AL + CWL tWR tPD
DQS, DQS#
DQ BL8
DI n
DI DI n+1 n+2
DI n+3
DI n+4
DI n+5
DI n+6
DI n+7
DQ BC4
DI n
DI n+1
DI n+2
DI n+3
tWRPDEN Power-down or self refresh entry1
Indicates A Break in Time Scale
Transitioning Data
Don't Care
Notes:
1. CKE can go LOW 2tCK earlier if BC4MRS.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 103: Power-Down Entry After WRITE with Auto Precharge (WRAP)
CK# CK T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Tb0 Tb1 Tb2 Tb3 Tb4
Command
WRAP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tIS CKE
tCPDED
Address
Valid
A10 WL = AL + CWL DQS, DQS# WR1 tPD
DQ BL8
DI n
DI n+1
DI DI DI n+2 n+3 n+4
DI n+5
DI n+6
DI n+7
DQ BC4
DI n
DI n+1
DI DI n+2 n+3 tWRAPDEN Start internal precharge Power-down or self refresh entry2 Indicates A Break in Time Scale
Transitioning Data
Don't Care
Notes:
1. tWR is programmed through MR0[11:9] and represents tWR (MIN)ns/tCK rounded up to the next integer tCK. 2. CKE can go LOW 2tCK earlier if BC4MRS.
Figure 104: REFRESH to Power-Down Entry
T0 CK# CK tCK tCH tCL T1 T2 T3 Ta0 Ta1 Ta2 Tb0
Command
REFRESH
NOP tCPDED tIS
NOP
NOP
NOP
Valid
tCKE (MIN) tPD
CKE tREFPDEN tRFC (MIN)1 tXP (MIN)
Indicates A Break In Time Scale
Don't Care
Notes:
1. After CKE goes HIGH during tRFC, CKE must remain HIGH until tRFC is satisfied.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 105: ACTIVATE to Power-Down Entry
T0 CK# CK tCK tCH tCL T1 T2 T3 T4 T5 T6 T7
Command
ACTIVE
NOP
NOP
Address
Valid tCPDED tIS tPD
CKE tACTPDEN
tCKE
Don't Care
Figure 106: PRECHARGE to Power-Down Entry
T0 CK# CK tCK tCH tCL T1 T2 T3 T4 T5 T6 T7
Command
PRE
NOP
NOP
Address
All/single bank
tCPDED tIS CKE tPREPDEN tPD
Don't Care
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 107: MRS Command to Power-Down Entry
T0 CK# CK tCK tCH tCL tCPDED NOP NOP NOP NOP T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4
Command
MRS
NOP
Address
Valid tMRSPDEN tIS tPD
CKE
Indicates A Break in Time Scale
Don't Care
Figure 108: Power-Down Exit to Refresh to Power-Down Entry
T0 CK# CK tCK tCH tCL T1 T2 T3 T4 Ta0 Ta1 Tb0
Command
NOP
NOP
NOP
NOP
REFRESH
NOP
NOP
tCPDED
tXP1
tIS CKE tPD Enter power-down mode
tIH tIS tXPDLL2 Exit power-down mode Enter power-down mode
Indicates A Break in Time Scale
Don't Care
Notes:
1. 2.
must be satisfied before issuing the command. must be satisfied (referenced to the registration of power-down exit) before the next power-down can be entered.
tXPDLL
tXP
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1Gb: x4, x8, x16 DDR3 SDRAM Operations RESET
The RESET signal (RESET#) is an asynchronous signal that triggers any time it drops LOW, and there are no restrictions about when it can go LOW. After RESET# goes LOW, it must remain LOW for 100ns. During this time, the outputs are disabled, ODT (RTT) turns off (High-Z), and the DRAM resets itself. CKE should be brought LOW prior to RESET# being driven HIGH. After RESET# goes HIGH, the DRAM must be reinitialized as though a normal power up were executed (see Figure 109 on page 159). All refresh counters on the DRAM are reset, and data stored in the DRAM is assumed unknown after RESET# has gone LOW.
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1Gb: x4, x8, x16 DDR3 SDRAM Operations
Figure 109: RESET Sequence
System RESET (warm boot) Stable and valid clock CK# CK T (MIN) = MAX (10ns, 5tCK) T = 100ns (MIN) RESET# tIOZ tIS Valid tCL tCL
T0
T1 tCK
Ta0
Tb0
Tc0
Td0
T=10ns (MIN) CKE
ODT tIS Command NOP MRS MRS
Valid
Valid
Valid
Valid
MRS
MRS
ZQCL
Valid
DM
Address
Code
Code
Code
Code
Valid
A10
Code
Code
Code
Code
A10 = H
Valid
BA[2:0]
BA0 = L BA1 = H BA2 = L High-Z
BA0 = H BA1 = H BA2 = L
BA0 = H BA1 = L BA2 = L
BA0 = L BA1 = L BA2 = L
Valid
DQS DQ
High-Z
RTT
High-Z
T = 500s (MIN)
tXPR
tMRD
tMRD
tMRD
tMOD
MR2 All voltage supplies valid and stable DRAM ready for external commands
MR3
MR1 with DLL ENABLE
MR0 with DLL RESET
ZQ CAL tZQINIT tDLLK
Normal operation Indicates A Break in Time Scale Don't Care
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1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
On-Die Termination (ODT)
ODT is a feature that enables the DRAM to enable/disable and turn on/off termination resistance for each DQ, DQS, DQS#, and DM for the x4 and x8 configurations (and TDQS, TDQS# for the x8 configuration, when enabled). ODT is applied to each DQ, UDQS, UDQS#, LDQS, LDQS#, UDM, and LDM signal for the x16 configuration. The ODT feature is designed to improve signal integrity of the memory channel by enabling the DRAM controller to independently turn on/off the DRAM's internal termination resistance for any grouping of DRAM devices. The ODT feature is not supported during DLL disable mode. A simple functional representation of the DRAM ODT feature is shown in Figure 110. The switch is enabled by the internal ODT control logic, which uses the external ODT ball and other control information. Figure 110: On-Die Termination
ODT To other circuitry such as RCV, ... VDDQ/2 RTT Switch DQ, DQS, DQS#, DM, TDQS, TDQS#
Functional Representation of ODT
The value of RTT (ODT termination value) is determined by the settings of several mode register bits (see Table 78 on page 163). The ODT ball is ignored while in self refresh mode (must be turned off prior to self refresh entry) or if mode registers MR1 and MR2 are programmed to disable ODT. ODT is comprised of nominal ODT and dynamic ODT modes and either of these can function in synchronous or asynchronous mode (when the DLL is off during precharge power-down or when the DLL is synchronizing). Nominal ODT is the base termination and is used in any allowable ODT state. Dynamic ODT is applied only during writes and provides OTF switching from no RTT or RTT_NOM to RTT_WR. The actual effective termination, RTT_EFF, may be different from the RTT targeted due to nonlinearity of the termination. For RTT_EFF values and calculations, see "ODT Characteristics" on page 49.
Nominal ODT
ODT (NOM) is the base termination resistance for each applicable ball, it is enabled or disabled via MR1[9, 6, 2] (see Figure 47 on page 61), and it is turned on or off via the ODT ball (see Table 75 on page 161).
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1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
Table 75: Truth Table - ODT (Nominal)
Note 1 applies to the entire table MR1[9, 6, 2] 000 000 000-101 000-101 110 and 111 Notes: ODT Pin 0 1 0 1 X DRAM Termination State RTT_NOM disabled, ODT off RTT_NOM disabled, ODT on RTT_NOM enabled, ODT off RTT_NOM enabled, ODT on RTT_NOM reserved, ODT on or off DRAM State Any valid Any valid except self refresh, read Any valid Any valid except self refresh, read Illegal Notes 2 3 2 3
1. Assumes dynamic ODT is disabled (see "Dynamic ODT" on page 162 when enabled). 2. ODT is enabled and active during most writes for proper termination, but it is not illegal to have it off during writes. 3. ODT must be disabled during reads. The RTT_NOM value is restricted during writes. Dynamic ODT is applicable if enabled.
Nominal ODT resistance RTT_NOM is defined by MR1[9, 6, 2], as shown in Figure 47 on page 61. The RTT_NOM termination value applies to the output pins previously mentioned. DDR3 SDRAM supports multiple RTT_NOM values based on RZQ/n where n can be 2, 4, 6, 8, or 12 and RZQ is 240. RTT_NOM termination is allowed any time after the DRAM is initialized, calibrated, and not performing read access or when it is not in self refresh mode. Write accesses use RTT_NOM if dynamic ODT (RTT_WR) is disabled. If RTT_NOM is used during writes, only RZQ/2, RZQ/4, and RZQ/6 are allowed (see Table 78 on page 163). ODT timings are summarized in Table 76, as well as listed in Table 53 on page 67. Examples of nominal ODT timing are shown in conjunction with the synchronous mode of operation in "Synchronous ODT Mode" on page 167. Table 76:
Symbol ODTL on ODTL off
tAONPD tAOFPD
ODT Parameter
Description ODT synchronous turn on delay ODT synchronous turn off delay ODT asynchronous turn on delay ODT asynchronous turn off delay ODT minimum HIGH time after ODT assertion or write (BC4) ODT minimum HIGH time after write (BL8) ODT turn-on relative to ODTL on completion ODT turn-off relative to ODTL off completion Begins at ODT registered HIGH ODT registered HIGH ODT registered HIGH ODT registered HIGH Defined to RTT_ON tAON RTT_OFF tAOF RTT_ON RTT_OFF Definition for All DDR3 Speed Bins CWL + AL - 2 CWL + AL - 2 1-9 1-9 4tCK Units
tCK tCK
ns ns
t
ODTH4
ODT registered HIGH ODT registered or write registration LOW with ODT HIGH Write registration with ODT HIGH Completion of ODTL on Completion of ODTL off ODT registered LOW RTT_ON RTT_OFF
CK
ODTH8
tAON tAOF
6tCK See Table 53 on page 67 0.5tCK 0.2tCK
t
CK
ps
tCK
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1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT) Dynamic ODT
In certain application cases, and to further enhance signal integrity on the data bus, it is desirable that the termination strength of the DDR3 SDRAM can be changed without issuing an MRS command, essentially changing the ODT termination on the fly. With dynamic ODT (RTT_WR) enabled, the DRAM switches from nominal ODT (RTT_NOM) to dynamic ODT (RTT_WR) when beginning a WRITE burst and subsequently switches back to nominal ODT (RTT_NOM) at the completion of the WRITE burst. This requirement is supported by the dynamic ODT feature, as described below: Functional Description The dynamic ODT mode is enabled if either MR2[9] or MR2[10] is set to "1." Dynamic ODT is not supported during DLL disable mode so RTT_WR must be disabled. The dynamic ODT function is described, as follows: * Two RTT values are available--RTT_NOM and RTT_WR: - The value for RTT_NOM is preselected via MR1[9, 6, 2] - The value for RTT_WR is preselected via MR2[10, 9] * During DRAM operation without READ or WRITE commands, the termination is controlled as follows: - Nominal termination strength RTT_NOM is used - Termination on/off timing is controlled via the ODT ball and latencies ODTL on and ODTL off * When a WRITE command (WR, WRAP, WRS4, WRS8, WRAPS4, WRAPS8) is registered, and if dynamic ODT is enabled, the ODT termination is controlled as follows: - A latency of ODTLCNW after the WRITE command: termination strength RTT_NOM switches to RTT_WR - A latency of ODTLCWN8 (for BL8, fixed or OTF) or ODTLCWN4 (for BC4, fixed or OTF) after the WRITE command: termination strength RTT_WR switches back to RTT_NOM - On/off termination timing is controlled via the ODT ball and determined by ODTL on, ODTL off, ODTH4, and ODTH8 - During the tADC transition window, the value of RTT is undefined ODT is constrained during writes and when dynamic ODT is enabled (see Table 77). ODT timings listed in Table 76 on page 161 also apply to dynamic ODT mode. Table 77:
Symbol ODTLCNW ODTLCWN4 ODTLCWN8
tADC
Dynamic ODT Specific Parameters
Description Change from RTT_NOM to RTT_WR Change from RTT_WR to RTT_NOM (BC4) Change from RTT_WR to RTT_NOM (BL8) RTT change skew Begins at Write registration Write registration Write registration ODTLCNW completed Defined to RTT switched from RTT_NOM to RTT_WR RTT switched from RTT_WR to RTT_NOM RTT switched from RTT_WR to RTT_NOM RTT transition complete Definition for All DDR3 Speed Bins WL - 2 4tCK + ODTL off 6tCK + ODTL off 0.5tCK 0.2tCK Units
tCK t
CK
tCK
tCK
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1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
Table 78: Mode Registers for RTT_NOM
MR1 (RTT_NOM) M9 0 0 0 0 1 1 1 1 M6 0 0 1 1 0 0 1 1 Notes: M2 0 1 0 1 0 1 0 1 RTT_NOM (RZQ) Off RZQ/4 RZQ/2 RZQ/6 RZQ/12 RZQ/8 Reserved Reserved RTT_NOM (Ohms) Off 60 120 40 20 30 Reserved Reserved n/a n/a Self refresh, write RTT_NOM Mode Restriction n/a Self refresh
1. RZQ = 240. If RTT_NOM is used during WRITEs, only RZQ/2, RZQ/4, RZQ/6 are allowed.
Table 79:
Mode Registers for RTT_WR
MR2 (RTT_WR) RTT_WR (RZQ) RZQ/4 RZQ/2 Reserved n/a n/a n/a n/a RTT_WR (Ohms) 60 120 Reserved n/a n/a n/a n/a
M10 0 0 1 1 n/a n/a n/a n/a
M9 0 1 0 1 n/a n/a n/a n/a
Dynamic ODT off: WRITE does not affect RTT_NOM
Table 80:
Timing Diagrams for Dynamic ODT
Title Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 Dynamic ODT: Without WRITE Command Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4
Figure and Page Figure 111 on page 164 Figure 112 on page 164 Figure 113 on page 165 Figure 114 on page 166 Figure 115 on page 166
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Figure 111: Dynamic ODT: ODT Asserted Before and After the WRITE, BC4
T0 CK# CK Command Address ODTH4 ODTH4 ODT ODTL on tAON (MIN) RTT RTT_NOM tAON (MAX) ODTLCNW DQS, DQS# DQ
DI n DI n+1 DI n+2 DI n+3
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T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
NOP
NOP
NOP
NOP
WRS4 Valid
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
ODTL off
ODTLCWN4 tADC (MIN) RTT_WR tADC (MAX) tADC (MAX) tADC (MIN) RTT_NOM tAOF (MAX) tAOF (MIN)
WL
Transitioning
Don't Care
Notes:
1. Via MRS or OTF. AL = 0, CWL = 5. RTT_NOM and RTT_WR are enabled. 2. ODTH4 applies to first registering ODT HIGH and then to the registration of the WRITE command. In this example, ODTH4 is satisfied if ODT goes LOW at T8 (four clocks after the WRITE command).
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Figure 112: Dynamic ODT: Without WRITE Command
CK# CK Command Address ODTH4 ODTL on ODT tAON (MAX) RTT tAON (MIN) DQS, DQS# DQ Transitioning Don't Care RTT_NOM tAOF (MAX) tAOF (MIN) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
ODTL off
Notes:
1. AL = 0, CWL = 5. RTT_NOM is enabled and RTT_WR is either enabled or disabled. 2. ODTH4 is defined from ODT registered HIGH to ODT registered LOW; in this example, ODTH4 is satisfied. ODT registered LOW at T5 is also legal.
Figure 113: Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8
T0 CK# CK Command NOP WRS8 NOP ODTLCNW Address Valid ODTH8 ODTLON ODTLOFF NOP NOP NOP NOP NOP NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
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ODT tADC (MAX) RTT tAON (MIN) ODTLCWN8 tAOF (MAX) RTT_WR tAOF (MIN)
DQS, DQS# WL
DQ
DI b
DI b+1
DI b+2
DI b+3
DI b+4
DI b+5
DI b+6
DI b+7
165
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Transitioning
Don't Care
1. Via MRS or OTF; AL = 0, CWL = 5. If RTT_NOM can be either enabled or disabled, ODT can be HIGH. RTT_WR is enabled. 2. In this example, ODTH8 = 6 is satisfied exactly.
1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
Figure 114: Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4
T0 CK# CK Command NOP WRS4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
ODTLCNW
Address Valid ODTH4 ODT ODTL on tADC (MAX) RTT tAON (MIN) ODTLCWN4 DQS, DQS# DQ WL Transitioning Don't Care
DI n DI n+1 DI n+2 DI n+3
ODTL off
tADC (MIN) RTT_WR RTT_NOM tADC (MAX)
tAOF (MIN) tAOF (MAX)
Notes:
1. Via MRS or OTF. AL = 0, CWL = 5. RTT_NOM and RTT_WR are enabled. 2. ODTH4 is defined from ODT registered HIGH to ODT registered LOW, so in this example, ODTH4 is satisfied. ODT registered LOW at T5 is also legal.
Figure 115: Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4
T0 CK# CK Command NOP WRS4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
ODTLCNW Address Valid ODTH4 ODT ODTL on RTT tAON (MIN) ODTLCWN4 DQS, DQS# WL DQ
DI n DI n+1 DI n+2 DI n+3
ODTL off
tADC (MAX) RTT_WR RTT_WR
tAOF (MIN)
tAOF (MAX)
Transitioning
Don't Care
Notes:
1. Via MRS or OTF. AL = 0, CWL = 5. RTT_NOM can be either enabled or disabled. If disabled, ODT can remain HIGH. RTT_WR is enabled. 2. In this example ODTH4 = 4 is satisfied exactly.
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1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT) Synchronous ODT Mode
Synchronous ODT mode is selected whenever the DLL is turned on and locked and when either RTT_NOM or RTT_WR is enabled. Based on the power-down definition, these modes are: * Any bank active with CKE HIGH * Refresh mode with CKE HIGH * Idle mode with CKE HIGH * Active power-down mode (regardless of MR0[12]) * Precharge power-down mode if DLL is enabled during precharge power-down by MR0[12] ODT Latency and Posted ODT In synchronous ODT mode, RTT turns on ODTL on clock cycles after ODT is sampled HIGH by a rising clock edge and turns off ODTL off clock cycles after ODT is registered LOW by a rising clock edge. The actual on/off times varies by tAON and tAOF around each clock edge (see Table 81 on page 168). The ODT latency is tied to the WRITE latency (WL) by ODTL on = WL - 2 and ODTL off = WL - 2. Since write latency is made up of CAS WRITE latency (CWL) and ADDITIVE latency (AL), the AL programmed into the mode register (MR1[4, 3]) also applies to the ODT signal. The DRAM's internal ODT signal is delayed a number of clock cycles defined by the AL relative to the external ODT signal. Thus ODTL on = CWL + AL - 2 and ODTL off = CWL + AL - 2. Timing Parameters Synchronous ODT mode uses the following timing parameters: ODTL on, ODTL off, ODTH4, ODTH8, tAON, and tAOF (see Table 81 and Figure 116 on page 168). The minimum RTT turn-on time (tAON [MIN]) is the point at which the device leaves High-Z and ODT resistance begins to turn on. Maximum RTT turn-on time (tAON [MAX]) is the point at which ODT resistance is fully on. Both are measured relative to ODTL on. The minimum RTT turn-off time (tAOF [MIN]) is the point at which the device starts to turn off ODT resistance. Maximum RTT turn off time (tAOF [MAX]) is the point at which ODT has reached High-Z. Both are measured from ODTL off. When ODT is asserted, it must remain HIGH until ODTH4 is satisfied. If a WRITE command is registered by the DRAM with ODT HIGH, then ODT must remain HIGH until ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (see Figure 117 on page 169). ODTH4 and ODTH8 are measured from ODT registered HIGH to ODT registered LOW or from the registration of a WRITE command until ODT is registered LOW.
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Table 81:
Symbol ODTL on ODTL off ODTH4
Synchronous ODT Parameters
Description ODT synchronous turn-on delay ODT synchronous turn-off delay ODT minimum HIGH time after ODT assertion or WRITE (BC4) ODT minimum HIGH time after WRITE (BL8) ODT turn-on relative to ODTL on completion ODT turn-off relative to ODTL off completion Begins at ODT registered HIGH ODT registered HIGH ODT registered HIGH, or write registration with ODT HIGH Write registration with ODT HIGH Completion of ODTL on Completion of ODTL off Defined to RTT_ON AON RTT_OFF tAOF ODT registered LOW
t
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Definition for All DDR3 Speed Bins CWL + AL - 2 CWL + AL - 2 4tCK
Units
t
CK
tCK tCK
ODTH8
tAON tAOF
ODT registered LOW RTT_ON RTT_OFF
6tCK See Table 53 on page 67 0.5tCK 0.2tCK
tCK
ps tCK
Figure 116: Synchronous ODT
T0 CK# CK CKE AL = 3 AL = 3 CWL - 2 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15
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ODT ODTH4 (MIN) ODTL off = CWL + AL - 2
ODTL on = CWL + AL - 2
1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
tAON (MIN) RTT tAON (MAX) Transitioning RTT_NOM
tAOF (MIN) tAOF (MAX) Don't Care
Notes:
1. AL = 3; CWL = 5; ODTL on = WL = 6.0; ODTL off = WL - 2 = 6. RTT_NOM is enabled.
Figure 117: Synchronous ODT (BC4)
T0 CK# CK CKE Command NOP NOP NOP NOP ODTH4 NOP NOP NOP WRS4 NOP ODTH4 (MIN) ODTH4 ODT ODTL off = WL - 2 ODTL on = WL - 2 tAON (MIN) RTT tAON (MAX) RTT_NOM tAOF (MAX) tAON (MIN) ODTL on = WL - 2 tAOF (MIN) tAON (MAX) RTT_NOM tAOF (MAX) tAOF (MIN) ODTLoff = WL - 2 NOP NOP NOP NOP NOP NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
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Transitioning
Don't Care
Notes:
1. 2. 3. 4.
WL = 7. RTT_NOM is enabled. RTT_WR is disabled. ODT must be held HIGH for at least ODTH4 after assertion (T1). ODT must be kept HIGH ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (T7). ODTH is measured from ODT first registered HIGH to ODT first registered LOW or from the registration of the WRITE command with ODT HIGH to ODT registered LOW. 5. Although ODTH4 is satisfied from ODT registered HIGH at T6, ODT must not go LOW before T11 as ODTH4 must also be satisfied from the registration of the WRITE command at T7.
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1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT) ODT Off During READs
As the DDR3 SDRAM cannot terminate and drive at the same time, RTT must be disabled at least one-half clock cycle before the READ preamble by driving the ODT ball LOW (if either RTT_NOM or RTT_WR is enabled). RTT may not be enabled until the end of the postamble as shown in the example in Figure 118 on page 171. Note: ODT may be disabled earlier and enabled later than shown in Figure 118 on page 171.
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Figure 118: ODT During READs
T0 CK# CK Command Address READ Valid ODTL on = CWL + AL - 2 ODTL off = CWL + AL - 2 ODT tAOF (MIN) RTT RTT_NOM RL = AL + CL DQS, DQS# DQ
DI b DI b+1 DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7
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T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
RTT_NOM tAOF (MAX) tAON (MAX)
Transitioning
Don't Care
Notes:
1. ODT must be disabled externally during READs by driving ODT LOW. For example, CL = 6; AL = CL - 1 = 5; RL = AL + CL = 11; CWL = 5; ODTL on = CWL + AL - 2 = 8; ODTL off = CWL + AL - 2 = 8. RTT_NOM is enabled. RTT_WR is a "Don't Care."
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1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT) Asynchronous ODT Mode
Asynchronous ODT mode is available when the DRAM runs in DLL on mode and when either RTT_NOM or RTT_WR is enabled; however, the DLL is temporarily turned off in precharged power-down standby (via MR0[12]). Additionally, ODT operates asynchronously when the DLL is synchronizing after being reset. See "Power-Down Mode" on page 151 for definition and guidance over power-down details. In asynchronous ODT timing mode, the internal ODT command is not delayed by AL relative to the external ODT command. In asynchronous ODT mode, ODT controls RTT by analog time. The timing parameters tAONPD and tAOFPD (see Table 82 on page 173) replace ODTL on/tAON and ODTL off/tAOF, respectively, when ODT operates asynchronously (see Figure 119 on page 173). The minimum RTT turn-on time (tAONPD [MIN]) is the point at which the device termination circuit leaves High-Z and ODT resistance begins to turn on. Maximum RTT turnon time (tAONPD [MAX]) is the point at which ODT resistance is fully on. tAONPD (MIN) and tAONPD (MAX) are measured from ODT being sampled HIGH. The minimum RTT turn-off time (tAOFPD [MIN]) is the point at which the device termination circuit starts to turn off ODT resistance. Maximum RTT turn-off time (tAOFPD [MAX]) is the point at which ODT has reached High-Z. tAOFPD (MIN) and tAOFPD (MAX) are measured from ODT being sampled LOW.
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Figure 119: Asynchronous ODT Timing with Fast ODT Transition
T0 CK# CK CKE tIH ODT tAONPD (MIN) RTT tAONPD (MAX) RTT_NOM tAOFPD (MAX) Transitioning Don't Care tAOFPD (MIN) tIS tIH tIS T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
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Notes:
1. AL is ignored.
Table 82:
Symbol
tAONPD tAOFPD
Asynchronous ODT Timing Parameters for All Speed Bins
Description Asynchronous RTT turn-on delay (power-down with DLL off) Asynchronous RTT turn-off delay (power-down with DLL off) Min 1 1 Max 9 9 Units ns ns
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1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT) Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry)
There is a transition period around power-down entry (PDE) where the DRAM's ODT may exhibit either synchronous or asynchronous behavior. This transition period occurs if the DLL is selected to be off when in precharge power-down mode by the setting MR0[12] = 0. Power-down entry begins tANPD prior to CKE first being registered LOW, and it ends when CKE is first registered LOW. tANPD is equal to the greater of ODTL off + 1tCK or ODTL on + 1tCK. If a REFRESH command has been issued, and it is in progress when CKE goes LOW, power-down entry will end tRFC after the REFRESH command rather than when CKE is first registered LOW. Power-down entry will then become the greater of tANPD and tRFC - REFRESH command to CKE registered LOW. ODT assertion during power-down entry results in an RTT change as early as the lesser of tAONPD (MIN) and ODTL on x tCK + tAON (MIN) or as late as the greater of tAONPD (MAX) and ODTL on x tCK + tAON (MAX). ODT de-assertion during power-down entry may result in an RTT change as early as the lesser of tAOFPD (MIN) and ODTL off x tCK + tAOF (MIN) or as late as the greater of tAOFPD (MAX) and ODTL off x tCK + tAOF (MAX). Table 83 on page 175 summarizes these parameters. If the AL has a large value, the uncertainty of the state of RTT becomes quite large. This is because ODTL on and ODTL off are derived from the WL and WL is equal to CWL + AL. Figure 120 on page 175 shows three different cases: * ODT_A: Synchronous behavior before tANPD * ODT_B: ODT state changes during the transition period with tAONPD (MIN) less than ODTL on x tCK + tAON (MIN) and tAONPD (MAX) greater than ODTL on x tCK + tAON (MAX) * ODT_C: ODT state changes after the transition period with asynchronous behavior
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Table 83:
Description
ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period
Min
tANPD
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Max + tXPDLL Greater of: tAONPD (MAX) (9ns) or ODTL on x tCK + tAON (MAX) Greater of: tAOFPD (MAX) (9ns) or ODTL off x tCK + tAOF (MAX)
Power-down entry transition period (power-down entry) Power-down exit transition period (power-down exit) ODT to RTT turn-on delay (ODTL on = WL - 2) ODT to RTT turn-off delay (ODTL off = WL - 2)
tANPD
Greater of: tANPD or tRFC - refresh to CKE LOW Lesser of: tAONPD (MIN) (1ns) or ODTL on x tCK + tAON (MIN) Lesser of: tAOFPD (MIN) (1ns) or ODTL off x tCK + tAOF (MIN)
WL - 1 (greater of ODTL off + 1 or ODTL on + 1)
Figure 120: Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry
T0 CK# CK CKE Command NOP REF NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 Ta0 Ta1 Ta2 Ta3
tRFC (MIN) tANPD PDE transition period
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ODT A synchronous DRAM RTT A synchronous RTT_NOM ODTL off
tAOF (MIN) tAOF (MAX) ODTL off + tAOFPD (MIN) tAOFPD (MAX)
ODT B asynchronous or synchronous DRAM RTT B asynchronous or synchronous ODT C asynchronous RTT_NOM
tAOFPD (MIN) ODTL off + tAOFPD (MAX)
1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
tAOFPD (MIN) DRAM RTT C asynchronous RTT_NOM tAOFPD (MAX)
Indicates A Break In Time Scale
Transitioning
Don't Care
Notes:
1. AL = 0; CWL = 5; ODTL off = WL - 2 = 3.
1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT) Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit)
The DRAM's ODT may exhibit either asynchronous or synchronous behavior during power-down exit (PDX). This transition period occurs if the DLL is selected to be off when in precharge power-down mode by setting MR0[12] to "0." Power-down exit begins tANPD prior to CKE first being registered HIGH, and it ends tXPDLL after CKE is first registered HIGH. tANPD is equal to the greater of ODTL off + 1tCK or ODTL on + 1tCK. The transition period is tANPD plus tXPDLL.
tAONPD (MIN) and ODTL on x tCK + tAON (MIN) or as late as the greater of
ODT assertion during power-down exit results in an RTT change as early as the lesser of
down exit may result in an RTT change as early as the lesser of tAOFPD (MIN) and ODTL off x tCK + tAOF (MIN) or as late as the greater of tAOFPD (MAX) and ODTL off x tCK + tAOF (MAX). Table 83 on page 175 summarizes these parameters.
tAONPD (MAX) and ODTL on x tCK + tAON (MAX). ODT de-assertion during power-
If the AL has a large value, the uncertainty of the RTT state becomes quite large. This is because ODTL on and ODTL off are derived from the WL, and WL is equal to CWL + AL. Figure 121 on page 177 shows three different cases: * ODT C: asynchronous behavior before tANPD * ODT B: ODT state changes during the transition period, with tAOFPD (MIN) less than ODTL off x tCK + tAOF (MIN) and ODTL off x tCK + tAOF (MAX) greater than tAOFPD (MAX) * ODT A: ODT state changes after the transition period with synchronous response
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Figure 121: Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit
T0 CK# CK CKE COMMAND tANPD PDX transition period ODT A asynchronous DRAM RTT A asynchronous ODT B asynchronous or synchronous RTT B asynchronous or synchronous tAOFPD (MIN) RTT_NOM tAOFPD (MAX) ODTL off + tAOF (MIN) tAOFPD (MAX) NOP NOP NOP NOP NOP NOP tXPDLL NOP NOP NOP NOP NOP NOP NOP NOP T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Tb0 Tb1 Tb2 Tc0 Tc1 Tc2 Td0 Td1
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tAOFPD (MIN) RTT_NOM ODTL off + tAOF (MAX) ODTL off tAOF (MAX)
ODT C synchronous DRAM RTT C synchronous RTT_NOM
tAOF (MIN)
Indicates A Break in Time Scale
Transitioning
Don't Care
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Notes:
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1. CL = 6; AL = CL - 1; CWL = 5; ODTL off = WL - 2 = 8.
1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) If the time in the precharge power down or idle states is very short (short CKE LOW pulse), the power-down entry and power-down exit transition periods will overlap. When overlap occurs, the response of the DRAM's RTT to a change in the ODT state may be synchronous or asynchronous from the start of the power-down entry transition period to the end of the power-down exit transition period even if the entry period ends later than the exit period (see Figure 122 on page 179). If the time in the idle state is very short (short CKE HIGH pulse), the power-down exit and power-down entry transition periods overlap. When this overlap occurs, the response of the DRAM's RTT to a change in the ODT state may be synchronous or asynchronous from the start of power-down exit transition period to the end of the powerdown entry transition period (see Figure 122 on page 179).
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Figure 122: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping
T0 CK# CK Command CKE PDE transition period tANPD tRFC (MIN) PDX transition period tANPD Short CKE LOW transition period (RTT change asynchronous or synchronous) tXPDLL REF NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0 Ta1 Ta2 Ta3 Ta4
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Indicates A Break in Time Scale
Transitioning
Don't Care
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Notes:
1. AL = 0, WL = 5, tANPD = 4.
1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
Figure 123: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping
T0 CK# CK Command EKC NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0 Ta1 Ta2 Ta3 Ta4
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tANPD
tXPDLL tANPD
Short CKE HIGH transition period (RTT change asynchronous or synchonous)
Indicates A Break in Time Scale
Transitioning
Don't Care
Notes:
1. AL = 0, WL = 5, tANPD = 4.
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1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
1Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT)
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.
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